ROHM EMB6, UMB6N Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

EMB6 / UMB6N

PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

l

Outline

l

Features

l

Inner circuit

1) Built-In Biasing Resistors, R1 = R2 = 47kW.

2) Two DTA144E chips in one package.

3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).

4) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of
completely eliminating parasitic effects.

5) Only the on/off conditions need to be set for
operation, making the circuit design easy.

6) Lead Free/RoHS Compliant.

l

Application

Inverter circuit, Interface circuit, Driver circuit

l

Packaging specifications

UMB6N

UMT6

2021

TR

180

8

8,000B68

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

Reel size

(mm)

EMB6

EMT6

1616

T2R

180

3,000

B6

Part No.

Package

Package

size

(mm)

Taping

code

R

1

47kW

Parameter

Tr1 and Tr2

V

CC

-50V

I

C(MAX.)

-100mA

EMT6

UMT6

R

2

47kW

EMB6

(SC-107C)

UMB6N

SOT-353 (SC-88)

OUT

(6)

(2)

GND

(1)

GND

(3)

IN

IN

(5)

OUT

(4)

(6)
(5)

(4)
(1)
(2)
(3)

(6)
(5)
(4)

(1)
(2)
(3)

1/6

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMB6 / UMB6N

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Supply voltage
Input voltage
Output current
Collector current

Power dissipation
Junction temperature

Range of storage temperature

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

Output voltage

V

O(on)

IO / II = -10mA / -0.5mA

MHz

-

250

-

mAmA-

-

-0.18

68--

-

-

-

-0.5

kW

0.811.2-32.9

47

61.1V-

-

-3.0

-V-

-0.1

-0.3

-

-0.5

Parameter

Symbol

Input voltage

V

I(off)

V

CC

= -5V, IO = -100mA

V

I(on)

VO = -0.3V, IO = -2mA

Unit

Min.

Typ.

Max.

T

j

150

°C

T

stg

-55 to +150

°C

Conditions

I

C(MAX.)

*1

-100

mA

150 (Total)

*3

mW

P

D

*2

V

IN

-40 to +10

V

I

O

-30

mA

Parameter

Symbol

Values

Unit

V

CC

-50

V

Input current

I

I

VI = -5V

Output current

I

O(off)

V

CC

= -50V, VI = 0V

DC current gain

G

I

VO = -5V, IO = -5mA

Input resistance

R

1

-

Resistance ratio

R2/R

1

-

Transition frequency

fT

*1

V

CE

= -10V, IE = 5mA,

f = 100MHz

2/6

2012.06 - Rev.B

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMB6 / UMB6N

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Input voltage vs. output current
(ON characteristics)

INPUT VOLTAGE : V

I(on)

[V]

OUTPUT CURRENT : IO [A]

Fig.2 Output current vs. input voltage
(OFF characteristics)

OUTPUT CURRENT : I

O

[A]

INPUT VOLTAGE : V

I(off)

[V]

Fig.3 Output current vs. output voltage

OUTPUT CURRENT : I

O

[mA]

OUTPUT VOLTAGE : VO [V]

Fig.4 DC current gain vs. output current

DC CURRENT GAIN : G

I

OUTPUT CURRENT : IO [A]

0

-5

-10

-15

-20

-25

-30

0 -5 -10

-40μA

0A

-60μA

-70μA

-80μA

-90μA

-100μA

-110μA

-120μA

-130μA

II=

Ta=25ºC

-30μA

-50μA

3/6

2012.06 - Rev.B