ROHM EMB11, UMB11N, IMB11A Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

EMB11 / UMB11N / IMB11A

PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

l

Outline

l

Features

1) Built-In Biasing Resistors, R1 = R2 = 10kW.

2) Two DTA114E chips in one package.

3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).

4) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

l

Inner circuit

of the input. They also have the advantage of
completely eliminating parasitic effects.

5) Only the on/off conditions need to be set for
operation, making the circuit design easy.

6) Lead Free/RoHS Compliant.

l

Application

Inverter circuit, Interface circuit, Driver circuit

l

Packaging specifications

R

1

10kW

R

2

10kW

Parameter

Tr1 and Tr2

V

CC

-50V

I

C(MAX.)

-100mA

Part No.

Package

Package

size

(mm)

Taping

code

8,000

B11

8

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

Reel size

(mm)

EMB11

EMT6

1616

T2R

180

3,000

B11

IMB11A

3,000

B11

UMB11N

UMT6

2021

TR

180

8

SMT6

2928

T108

180

8

EMT6

UMT6

SMT6

EMB11

(SC-107C)

IMB11A

SOT-457 (SC-74)

UMB11N

SOT-353 (SC-88)

EMB11 / UMB11N

IMB11A

OUT

(6)

(2)

IN

(1)

GND

(3)

OUT

IN

(5)

GND

(4)

OUT

(4)

(2)

IN

(3)

GND

(1)

OUT

IN

(5)

GND

(6)

(6)
(5)

(4)
(1)
(2)
(3)

(4)
(5)

(6)

(3)
(2)

(1)

(6)
(5)
(4)

(1)
(2)
(3)

1/7

2012.06 - Rev.B

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMB11 / UMB11N / IMB11A

lAbsolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Supply voltage
Input voltage
Output current
Collector current

Power dissipation

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25°C)

<For Tr1 and Tr2 in common>

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

Parameter

Symbol

Values

Unit

V

CC

-50

V

V

IN

-40 to +10

V

I

O

-50

mA

I

C(MAX.)

*1

-100

mA

EMB11 / UMB11N

P

D

*2

150 (Total)

*3

mW

IMB11A

300 (Total)

*4

mW

Unit

Min.

Typ.

Max.

T

j

150

°C

T

stg

-55 to +150

°C

Parameter

-

-

Input voltage

V

I(off)

V

CC

= -5V, IO = -100mA

Symbol

Conditions

-3.0

-mA-

-0.1

-0.3

mA

-

-

-0.88

20----

-

-0.5

kW

0.811.2-71013

MHz

-

250

-

Transition frequency

fT

*1

V

CE

= -10V, IE = 5mA,

f = 100MHz

Resistance ratio

R2/R

1

-

Input current

I

I

VI = -5V

Output current

I

O(off)

V

CC

= -50V, VI = 0V

DC current gain

G

I

VO = -5V, IO = -5mA

Input resistance

R

1

-

V
V

I(on)

VO = -0.3V, IO = -10mA

Output voltage

V

O(on)

IO / II = -10mA / -0.5mA

V

-

-0.5

2/7

2012.06 - Rev.B

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

EMB11 / UMB11N / IMB11A

lElectrical characteristic curves(Ta = 25°C)

0

-10

-20

-30

-40

-50

0 -5 -10

-100μA

0A

-120μA

-140μA

-160μA

-180μA

-200μA

-220μA

-240μA

-260μA

-280μA

-300μA

II=

Ta=25ºC

Fig.1 Input voltage vs. output current
(ON characteristics)

INPUT VOLTAGE : V

I(on)

[V]

OUTPUT CURRENT : IO [A]

Fig.2 Output current vs. input voltage
(OFF characteristics)

OUTPUT CURRENT : I

O

[A]

INPUT VOLTAGE : V

I(off)

[V]

Fig.3 Output current vs. output voltage

OUTPUT CURRENT : I

O

[mA]

OUTPUT VOLTAGE : VO [V]

Fig.4 DC current gain vs. output current

DC CURRENT GAIN : G

I

OUTPUT CURRENT : IO [A]

3/7

2012.06 - Rev.B