ROHM EMB10, IMB10A, UMB10N Schematic [ru]
EMB10 / UMB10N / IMB10A
Transistors
General purpose
(dual digital transistors)
EMB10 / UMB10N / IMB10A
zFeatures
1) Two DTA123J chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr
2.
DTr
1 and
zEquivalent circuit
EMB10 / UMB10N IMB10A
(3) (2) (1)
R
1
R
2
R
R
1
=2.2kΩ
2
=47kΩ
DTr
2
R
2
R
(4) (5) (6)
DTr
1
(4) (5) (6)
R
1
R
2
DTr
1
DTr
2
(3) (2) (1)
1
1
=2.2kΩ
R
R
2
R2=47kΩ
R
1
zAbsolute maximum ratings (Ta = 25°C)
IN
Limits
−12
5
150 (TOTAL)
300 (TOTAL)
Parameter Symbol
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
EMB10, UMB10N
IMB10A
I
V
CC −50 V
V
O −100
I
C (Max.) −100
Pd
Tj 150 ˚C
Tstg −55 to +150 ˚C
Unit
V
mA
mW
zDimensions (Unit : mm)
EMB10
ROHM : EMT6
UMB10N
ROHM : UMT6
EIAJ : SC-88
IMB10A
ROHM : SMT6
EIAJ : SC-74
1
∗
2
∗
(6) (5) (4)
(1) (2) (3)
Each lead has same dimensions
Abbreviated symbol : B10
(6) (5)(4)
(1) (2)(3)
Each lead has same dimensions
Abbreviated symbol : B10
(4) (5) (6)
(3) (2) (1)
Each lead has same dimensions
Abbreviated symbol : B10
Rev.C 1/2
EMB10 / UMB10N / IMB10A
Transistors
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device
∗
R2 / R
zPackaging specifications
Package
Type
Code TN T110
Basic ordering
unit (pieces)
EMB10
UMB10N
IMB10A
zElectrical characteristic curves
−100
−50
−20
(V)
−10
I (on)
−5
Ta=−40˚C
25˚C
−2
100˚C
−1
−500m
INPUT VOLTAGE : V
−200m
−100m
−100µ
−1m −10m −100m
−200µ−2m −20m−500µ−5m −50m
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
−
1
−
500m
−
200m
(V)
−
100m
O (on)
−
50m
−
20m
−
10m
−
5m
OUTPUT VOLTAGE : V
−
-2m
−
1m
−100µ
−200µ−2m −20m−500µ−5m −50m
OUTPUT CURRENT : I
Fig.4 Output voltage vs. output
Ta=100˚C
25˚C
−40˚C
−1m −10m −100m
O
(A)
current
I (off)
V
V
I (on)
V
O (on)
I
I
I
O (off)
G
T
R
1
VO=−0.3V
lO/lI =20
Min.
Typ. Max. Unit Conditions
V
CC
=
−5V, I
O
=
−
−
−0.5
−1.1
I
1.54
1
−
−
−0.1
−0.3
−
−
−
−
80
−f
17
−0.5
−
−
250 − V
2.86
2.2
21
V
O
=
V
mA
µA
−
MHz
V
O/II
=
I
V
I
=
−5V
CC
V
O
=
V
CE
=
−
3.6
−
kΩ
26
−−
−100µA
−0.3V, I
O
=
−5mA
−5mA/−0.25mA
=
−50V, V
I
=
0V
−5V, I
O
=
−10mA
−10V, I
E
=
5mA, f=100MHz
∗
−
Taping
T2R
8000
3000 3000
−10m
−5m
−2m
−1m
(A)
−500µ
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
OUTPUT CURRENT : Io
−2µ
−1µ
0 −3
Ta=100˚C
−0.5 −1 −1.5 −2 −2.5
INPUT VOLTAGE : V
Fig.2 Output current vs. input voltage
(OFF characteristics)
25˚C
−40˚C
VCC=−5V
I (off)
(V)
1k
500
I
200
100
DC CURRENT GAIN : G
Ta=100˚C
25˚C
−40˚C
50
20
10
5
2
1
−100µ−1m −10m −100m
−200µ−2m −20m−500µ−5m −50m
OUTPUT CURRENT : I
VO=−5V
O
(A)
Fig.3 DC current gain vs. output
current
Rev.C 2/2
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