EMA4 / UMA4N / FMA4A
Transistors
General purpose (dual digital transistors)
EMA4 / UMA4N / FMA4A
zFeature
1) Two DT A114T chips in a EMT or UMT or SMT
package.
zEquivalent circuit s
EMA4 / UMA4N
(2)(3)
R
1
(1)
R
1
FMA4A
(3)
R
1
(4) (5)
R
1
zExternal dimensions (Unit : mm)
EMA4
(3)
ROHM : EMT5
0.22
0.13
(4)
(5)
0.5
1.0
1.6
(2)
0.5
(1)
1.2
1.6
0.5
Each lead has same dimensions
(4) (5)
(2)
(1)
zPackage, marking, and packaging specifications
A4
TR
FMA4A
SMT5
A4
T148
3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMA4
EMT5
A4
T2R
8000
UMA4N
UMT5
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
V
Collector current
Power
dissipation
EMA4 / UMA4N
FMA4A
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Tstg
Pd
CBO
CEO
EBO
I
Tj
C
Limits
−50
−50
−5
−100
150(TOTAL)
300(TOTAL)
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
)
UMA4N
0.2
0.15
ROHM : UMT5
EIAJ : SC-88A
FMA4A
∗1
0.1Min.
)
2
(
0.3
)
1
(
∗2
0.15
ROHM : SMT5
EIAJ : SC-74A
0.3to0.6
)
4
3
(
(
)
0.65
2
(
)
1.6
2.8
)
5
(
0to0.1
1.25
2.1
0to0.1
0.65
1
(
0.7
Each lead has same dimensions
)
3
(
0.95
2.9
1.9
)(
4
(
0.95
)
5
1.1
0.8
Each lead has same dimensions
1.3
2.0
0.9
Rev.A 1/2
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
∗Transition frequency of the device.
zElectrical characteristics curves
1k
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
−100µ−1m −10m −100m
Ta=100°C
25°C
−40°C
−200µ−2m −20m−500µ−5m −50m
COLLECTOR CURRENT : I
Fig.1 DC current gain vs. collector
current
V
CE
=−
5V
C
(A)
BV
BV
BV
I
I
V
CE(sat)
CBO
CEO
EBO
CBO
EBO
h
FE
f
T
R
1
−50
−50
−5
100
−
−
−
−
−
−
−
−
−
250
250
−
71013
−1
(V)
−500m
CE(sat)
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
COLLECTOR SATURATION VOLTAGE : V
−100µ−1m −10m −100m
−200µ−2m −20m−500µ−5m −50m
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : I
Fig.2 Collector-emitter saturation
voltage vs. collector current
EMA4 / UMA4N / FMA4A
Conditions
=−50V
=−4V
=−10mA/−1mA
=−5V, IC=−1mA
=−10V, IE=5mA, f=100MHz
−
−0.5
−0.5
−0.3
600
Unit
V
C
µA
µA
=−50µA
I
V
C
=−1mA
I
V
I
E
=−50µA
V
CB
EB
V
V
I
C/IB
V
CE
−
V
CE
−
−
−
MHz
−
kΩ
lC/lB=20
C
(A)
∗
Rev.A 2/2