ROHM EMA3, FMA3A, UMA3N Schematic [ru]
Tr
ansistors
Emitter common
(dual digital transistors)
EMA3 / UMA3N / FMA3A
zFeatures
1) Two DT A143Ts in a EMT or UMT or SMT package.
2) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type PNP silicon transistor (Built-in
resistor type.)
The following characteristics apply to both DTr
DTr
2.
1 and
zEquivalent circuit
EMA3 / UMA3N
R1=4.7kΩ
(3) (2) (1)
R
1
DTr
2
(4)
FMA3A
R1=4.7kΩ
R
1
DTr
1
(5)
R
DTr
2
(3) (4) (5)
1
(2)
R
1
DTr
1
(1)
zExternal dimensions (Unit : mm)
EMA3
ROHM : EMT5
UMA3N
ROHM : UMT5
EIAJ : SC-88A
FMA3A
ROHM : SMT5
EIAJ : SC-74A
EMA3 / UMA3N / FMA3A
(3)
(4)
0.5
1.0
1.6
(2)
0.22
0.13
Abbreviated symbol : A3
0.2
0.15
0.1Min.
Abbreviated symbol : A3
0.3
0.15
0.3to0.6
Abbreviated symbol : A3
0.5
(1)
(5)
1.2
1.6
0.5
Each lead has same dimensions
)
)
3
4
(
(
)
0.65
2
(
)
0.65
1
(6)
(
1.25
2.1
0.7
0to0.1
Each lead has same dimensions
)
)
3
2
(
(
0.95
1.9
)
4
(
0.95
)
)
1
5
(
(
1.6
2.8
0.8
0to0.1
Each lead has same dimensions
2.0
1.3
0.9
2.9
1.1
Rev.A 1/2
Tr
ansistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
EMA3, UMA3N
FMA3A
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
zElectrical characteristics (Ta=25°C)
Parameter Symbol
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Input resistance
Transition frequency of the device
∗
BV
BVCEO
BVEBO
ICBO
hFE
EBO −−−0.5 VEB
I
VCE (sat)
fT
R1
zPackaging specifications
Type
EMA3
UMA3N
FMA3A
Package
Code TR T148
Basic ordering
unit (pieces)
T2R
8000
Taping
3000 3000
zElectrical characteristic curves
1k
500
FE
200
100
DC CURRENT GAIN : h
Ta=100˚C
50
20
10
5
2
1
−100µ −1m
−40˚C
−200µ −2m
−500µ −5m
COLLECTOR CURRENT : I
25˚C
−10m
−20m
Fig.1 DC current gain vs. collector
current
VCE=−5V
−50m −100m
C
(A)
−50 V
−50
−5
−100
150 (TOTAL)
300 (TOTAL)
150
−55 to +150
V
V
mA
mW
˚C
˚C
1
∗
2
∗
Typ. Max. Unit Conditions
Min.
C
=
−50
−
−50
−
−5
−
−
−
100
250
−
−
− 250 −
3.29
4.7
−
−
−
−0.5
600
−0.3
6.11
µA
MHz
kΩ
−50µA
VI
C
=
−1mA
V
I
E
=
−50µA
I
V
V
CB
−
CE/IC
V
V
I
C/IB
V
CE
=
−50V
=
−5V/−1mA
=
−4VµA
=
−5mA/−0.25mA
=
−10V, IE=5mA, f=100MHz
−1
(V)
−500m
CE (sat)
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ−1m
COLLECTOR SATURATION VOLTAGE : V
Ta=100˚C
25˚C
−40˚C
−200µ−2m
−500µ−5m
COLLECTOR CURRENT : I
Fig.2 Collector-emitter saturation
voltage vs. collector current
−10m
−20m
C
lC/lB=20
−50m−100m
(A)
EMA3 / UMA3N / FMA3A
∗
−
Rev.A 2/2
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