ROHM EM6M2 Technical data
T
1.2V Drive Nch+Pch MOSFET
EM6M2
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zFeatures
1) Nch MOSFET and Pch MOSFET are put in EMT6 package.
2) High-speed switching.
3) Low voltage drive (1.2V drive).
4) Built-in G-S Protection Diode.
zApplications zInner circuit
Switching
zPackaging specifications
Package
Type
EM6M2
Code
Basic ordering unit (pieces)
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
20
±
8
±200
±400
Limits
Tr2 : P-ch
−20
±10
±200
±400
150
120
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw 10µs, Duty cycle 1%
∗2 Each terminal mounted on a recommended land
Symbol
DSS
GSS
D
∗1
DP
∗2
P
D
Tr1 : N-ch
EMT6
(6)
∗2
∗1
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Unit
VV
VV
mAI
mAI
mW / TOTAL
mW / ELEMEN
°CTch 150
°CTstg −55 to +150
Each lead has same dimensions
Abbreviated symbol : M02
(5)
∗1
(2)
(4)
(3)
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
G
D
Z
G
S
r
F
I
O
R
T
R
T
F
G
D
Z
G
S
r
F
I
O
R
T
R
T
F
N-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
ate-source leakage
rain-source breakdown voltage
V
(BR) DSS
ero gate voltage drain current
ate threshold voltage
tatic drain-source on-state
esistance
V
R
orward transfer admittance
nput capacitance
utput capacitance
everse transfer capacitance
urn-on delay time
ise time
urn-off delay time
all time
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
P-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
ate-source leakage
rain-source breakdown voltage
V
(BR) DSS
ero gate voltage drain current
ate threshold voltage
tatic drain-source on-state
esistance
V
R
orward transfer admittance
nput capacitance
utput capacitance
everse transfer capacitance
urn-on delay time
ise time
urn-off delay time
all time
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
Min.
I
GSS
Typ. Max.
−−±10 µAV
Unit
= ±8V, VDS=0V
GS
20 −−VID= 1mA, VGS=0V
I
DSS
GS (th)
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
V
I
GSS
−−1 µAVDS= 20V, VGS=0V
0.3 − 1.0 V VDS= 10V, ID= 1mA
− 0.7 1.0 I
− 0.8 1.2 Ω
∗
− 1.0 1.4 ID= 200mA, VGS= 1.8V
− 1.2 2.4 ΩΩI
− 1.6 4.8 I
∗
0.2 −−SVDS= 10V, ID= 200mA
fs
− 25 − pF VDS= 10V
iss
− 1010− pF VGS= 0V
oss
−
rss
∗
−
∗
t
r
−
∗
−
∗
t
−−ns
f
− pF f=1MHz
5
− ns
10
− ns
15
− ns
10
Min. Typ. Max.
∗
SD
−−1.2 V IS= 100mA, VGS=0VForward voltage
Min.
Typ. Max.
−−±10 µAV
= 200mA, VGS= 4.0V
Ω
D
I
= 200mA, VGS= 2.5V
D
= 40mA, VGS= 1.5V
D
Ω
= 20mA, VGS= 1.2V
D
VDD 10V
ID= 150mA
GS
V
R
L
R
G
= 10Ω
Unit
Unit
GS
= 4.0V
= ±10V, VDS=0V
−20 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
V
−−−1 µAVDS= −20V, VGS=0V
−0.3 −−1.0 V VDS= −10V, ID= −100µA
− 0.8 1.2 I
− 1.0 1.5 Ω
∗
− 1.3 2.2 ID= −100mA, VGS= −1.8V
− 1.6 3.5 ΩΩI
− 2.4 9.6 I
∗
0.2 −−SV
fs
− 115 − pF VDS= −10V
iss
− 106− pF VGS= 0V
oss
−
rss
∗
−
∗
t
r
−
∗
−
∗
−−ns
t
f
− pF f=1MHz
− ns
6
4
− ns
17
− ns
17
Min. Typ. Max.
∗
SD
−−−1.2 V IS= −200mA, VGS=0VForward voltage
= −200mA, VGS= −4.5V
Ω
D
= −100mA, VGS= −2.5V
I
D
= −40mA, VGS= −1.5V
D
Ω
= −10mA, VGS= −1.2V
D
= −10V, ID= −200mA
DS
V
DD
ID= −100mA
GS
= −4.5V
V
R
L
R
G
= 10Ω
Unit
Conditions
67Ω
Conditions
Conditions
−10V
100Ω
Conditions
Data Sheet EM6M2
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
.5
V
V
V
N-ch
zElectrical characteristic curve
0.5
0.4
[A]
D
0.3
0.2
DRAIN CURRENT : I
0.1
0
00.20.40.60.81
Fi g.1 Typical Output Charac terist ics(Ⅰ)
VGS= 4.5
VGS= 2.5
VGS= 1.8
DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]
VGS= 1.5V
VGS= 1.3V
Ta= 25°C
Pulsed
VGS= 1. 2V
0.5
VGS= 2.5V
= 1.8V
V
GS
0.4
[A]
D
0.3
0.2
DRAIN CURRENT : I
0.1
0
024 6810
Fi g.2 T ypic al Output C haracter ist ics(Ⅱ)
VGS= 1. 5V
VGS= 1.3V
VGS= 1.2V
Ta= 25°C
Pulsed
1
V
DS
=10V
Pulsed
0.1
(A)
D
0.01
0.001
0.0001
DRAIN CURRENT : I
0.00001
0.0 0.5 1.0 1
GATE-SOURCE VOLTAGE : VGS (V)
Ta=125°C
−25°C
Fig.3 Typical transfer characteristics
75°C
25°C
Data Sheet EM6M2
10000
Ta= 25°C
Pulsed
]
Ω
(on) [m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0.01 0.1 1
DRAIN-CURRENT : ID[A]
Fi g.4 Stat ic Dr ain- Source O n-State
Resi stance vs. D rai n Curr ent(Ⅰ)
10000
VGS= 1. 8V
Pulsed
]
Ω
(on) [m
DS
1000
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0 .01 0.1 1
DRAIN-CURRENT : ID[A]
Fi g.7 Stat ic Dr ain- Source O n-State
Resi stance vs. D rai n Curr ent(Ⅲ)
VGS= 1. 2V
= 1. 5V
V
GS
V
= 1. 8V
GS
V
= 2. 5V
GS
V
= 4. 0V
GS
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
VGS= 4. 0V
Pulsed
]
Ω
(on) [m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0. 01 0.1 1
DRAIN-CURRENT : ID[A]
Fi g.5 Static Drain- Source On- State
Resi stance vs. D rai n Curr ent(Ⅱ)
10000
VGS= 1. 5V
Pulsed
]
Ω
(on) [m
DS
1000
Ta= 125°C
Ta= 75°C
RESIST ANCE : R
STATI C DRAIN -SOUR CE ON- STATE
100
0.001 0. 01 0.1 1
DRAIN-CURRENT : ID[A]
Fi g.8 St atic D rai n-Sourc e On-Stat e
Resistance vs. Drain Curr ent(Ⅳ)
Ta= 25°C
Ta= -25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
10000
VGS= 2.5V
Pulsed
]
Ω
(on) [m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0. 01 0.1 1
DRAIN-CURRENT : I
Fi g.6 Stat ic D rain- Source O n-State
Resi stance vs. D rai n Curr ent(Ⅱ)
10000
VGS= 1.2V
Pulsed
]
Ω
(on)[m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0.01 0.1 1
DRAIN-CURRENT : I
Fig .9 Static Dr ain-Source On-State
Resi stance vs. D rai n Curr ent(Ⅴ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
[A]
D
[A]
D
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
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