T
1.2V Drive Nch+Pch MOSFET
EM6M2
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zFeatures
1) Nch MOSFET and Pch MOSFET are put in EMT6 package.
2) High-speed switching.
3) Low voltage drive (1.2V drive).
4) Built-in G-S Protection Diode.
zApplications zInner circuit
Switching
zPackaging specifications
Package
Type
EM6M2
Code
Basic ordering unit (pieces)
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
20
±
8
±200
±400
Limits
Tr2 : P-ch
−20
±10
±200
±400
150
120
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw 10µs, Duty cycle 1%
∗2 Each terminal mounted on a recommended land
Symbol
DSS
GSS
D
∗1
DP
∗2
P
D
Tr1 : N-ch
EMT6
(6)
∗2
∗1
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Unit
VV
VV
mAI
mAI
mW / TOTAL
mW / ELEMEN
°CTch 150
°CTstg −55 to +150
Each lead has same dimensions
Abbreviated symbol : M02
(5)
∗1
(2)
(4)
(3)
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
G
D
Z
G
S
r
F
I
O
R
T
R
T
F
G
D
Z
G
S
r
F
I
O
R
T
R
T
F
N-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
ate-source leakage
rain-source breakdown voltage
V
(BR) DSS
ero gate voltage drain current
ate threshold voltage
tatic drain-source on-state
esistance
V
R
orward transfer admittance
nput capacitance
utput capacitance
everse transfer capacitance
urn-on delay time
ise time
urn-off delay time
all time
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
P-ch
zElectrical characteristics (Ta=25°C)
Parameter Symbol
ate-source leakage
rain-source breakdown voltage
V
(BR) DSS
ero gate voltage drain current
ate threshold voltage
tatic drain-source on-state
esistance
V
R
orward transfer admittance
nput capacitance
utput capacitance
everse transfer capacitance
urn-on delay time
ise time
urn-off delay time
all time
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
∗ Pulsed
Min.
I
GSS
Typ. Max.
−−±10 µAV
Unit
= ±8V, VDS=0V
GS
20 −−VID= 1mA, VGS=0V
I
DSS
GS (th)
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
V
I
GSS
−−1 µAVDS= 20V, VGS=0V
0.3 − 1.0 V VDS= 10V, ID= 1mA
− 0.7 1.0 I
− 0.8 1.2 Ω
∗
− 1.0 1.4 ID= 200mA, VGS= 1.8V
− 1.2 2.4 ΩΩI
− 1.6 4.8 I
∗
0.2 −−SVDS= 10V, ID= 200mA
fs
− 25 − pF VDS= 10V
iss
− 1010− pF VGS= 0V
oss
−
rss
∗
−
∗
t
r
−
∗
−
∗
t
−−ns
f
− pF f=1MHz
5
− ns
10
− ns
15
− ns
10
Min. Typ. Max.
∗
SD
−−1.2 V IS= 100mA, VGS=0VForward voltage
Min.
Typ. Max.
−−±10 µAV
= 200mA, VGS= 4.0V
Ω
D
I
= 200mA, VGS= 2.5V
D
= 40mA, VGS= 1.5V
D
Ω
= 20mA, VGS= 1.2V
D
VDD 10V
ID= 150mA
GS
V
R
L
R
G
= 10Ω
Unit
Unit
GS
= 4.0V
= ±10V, VDS=0V
−20 −−VID= −1mA, VGS=0V
I
DSS
GS (th)
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
V
−−−1 µAVDS= −20V, VGS=0V
−0.3 −−1.0 V VDS= −10V, ID= −100µA
− 0.8 1.2 I
− 1.0 1.5 Ω
∗
− 1.3 2.2 ID= −100mA, VGS= −1.8V
− 1.6 3.5 ΩΩI
− 2.4 9.6 I
∗
0.2 −−SV
fs
− 115 − pF VDS= −10V
iss
− 106− pF VGS= 0V
oss
−
rss
∗
−
∗
t
r
−
∗
−
∗
−−ns
t
f
− pF f=1MHz
− ns
6
4
− ns
17
− ns
17
Min. Typ. Max.
∗
SD
−−−1.2 V IS= −200mA, VGS=0VForward voltage
= −200mA, VGS= −4.5V
Ω
D
= −100mA, VGS= −2.5V
I
D
= −40mA, VGS= −1.5V
D
Ω
= −10mA, VGS= −1.2V
D
= −10V, ID= −200mA
DS
V
DD
ID= −100mA
GS
= −4.5V
V
R
L
R
G
= 10Ω
Unit
Conditions
67Ω
Conditions
Conditions
−10V
100Ω
Conditions
Data Sheet EM6M2
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
.5
V
V
V
N-ch
zElectrical characteristic curve
0.5
0.4
[A]
D
0.3
0.2
DRAIN CURRENT : I
0.1
0
00.20.40.60.81
Fi g.1 Typical Output Charac terist ics(Ⅰ)
VGS= 4.5
VGS= 2.5
VGS= 1.8
DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]
VGS= 1.5V
VGS= 1.3V
Ta= 25°C
Pulsed
VGS= 1. 2V
0.5
VGS= 2.5V
= 1.8V
V
GS
0.4
[A]
D
0.3
0.2
DRAIN CURRENT : I
0.1
0
024 6810
Fi g.2 T ypic al Output C haracter ist ics(Ⅱ)
VGS= 1. 5V
VGS= 1.3V
VGS= 1.2V
Ta= 25°C
Pulsed
1
V
DS
=10V
Pulsed
0.1
(A)
D
0.01
0.001
0.0001
DRAIN CURRENT : I
0.00001
0.0 0.5 1.0 1
GATE-SOURCE VOLTAGE : VGS (V)
Ta=125°C
−25°C
Fig.3 Typical transfer characteristics
75°C
25°C
Data Sheet EM6M2
10000
Ta= 25°C
Pulsed
]
Ω
(on) [m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0.01 0.1 1
DRAIN-CURRENT : ID[A]
Fi g.4 Stat ic Dr ain- Source O n-State
Resi stance vs. D rai n Curr ent(Ⅰ)
10000
VGS= 1. 8V
Pulsed
]
Ω
(on) [m
DS
1000
RESISTANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0 .01 0.1 1
DRAIN-CURRENT : ID[A]
Fi g.7 Stat ic Dr ain- Source O n-State
Resi stance vs. D rai n Curr ent(Ⅲ)
VGS= 1. 2V
= 1. 5V
V
GS
V
= 1. 8V
GS
V
= 2. 5V
GS
V
= 4. 0V
GS
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
VGS= 4. 0V
Pulsed
]
Ω
(on) [m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0. 01 0.1 1
DRAIN-CURRENT : ID[A]
Fi g.5 Static Drain- Source On- State
Resi stance vs. D rai n Curr ent(Ⅱ)
10000
VGS= 1. 5V
Pulsed
]
Ω
(on) [m
DS
1000
Ta= 125°C
Ta= 75°C
RESIST ANCE : R
STATI C DRAIN -SOUR CE ON- STATE
100
0.001 0. 01 0.1 1
DRAIN-CURRENT : ID[A]
Fi g.8 St atic D rai n-Sourc e On-Stat e
Resistance vs. Drain Curr ent(Ⅳ)
Ta= 25°C
Ta= -25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
10000
VGS= 2.5V
Pulsed
]
Ω
(on) [m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0. 01 0.1 1
DRAIN-CURRENT : I
Fi g.6 Stat ic D rain- Source O n-State
Resi stance vs. D rai n Curr ent(Ⅱ)
10000
VGS= 1.2V
Pulsed
]
Ω
(on)[m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0.01 0.1 1
DRAIN-CURRENT : I
Fig .9 Static Dr ain-Source On-State
Resi stance vs. D rai n Curr ent(Ⅴ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
[A]
D
[A]
D
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
1
.5
Data Sheet EM6M2
1
VDS= 10V
Puls ed
Ta= -25°C
Ta=25°C
FOR WAR D TRAN SFER
ADMI TTANC E : |Yfs| [S]
0.1
0.01 0.1 1
DRAIN-CURRENT : ID[A]
Fi g.10 F orward T ransf er A dmittanc e
vs. Drai n Curr ent
1000
100
10
SWITHING TIME : t (ns)
1
0.01 0.1
DRAIN CURRENT : ID (A)
Ta=75°C
Ta= 125°C
Fig.13 Switching characteristics
Ta
V
V
R
Pulsed
t
d(off)
t
f
t
d(on)
t
r
DD
GS
G
=25°C
=10V
=4V
=10Ω
1
(A)
S
Ta=125°C
0.1
SOURCE CURRENT : I
0.01
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.11 Source current vs.
source-drain voltage
10.50.0
100
Ciss
10
CAPACITANCE : C [pF]
Crss
Coss
Ta= 25°C
f=1MH z
=0V
V
GS
1
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
Fi g.14 T ypical Capac itanc e
vs. Drain- Source Voltage
V
Pulsed
75°C
25°C
−25°C
GS
=0V
1
[V]
DS
2.5
2
]
Ω
(ON)[
1.5
DS
1
RESISTAN CE : R
0.5
ID= 0.02A
STAT IC D RAIN- SOURC E ON -ST ATE
0
0246810
Fi g.12 Stati c Dr ain- Sour ce On- State
Resi stance vs. Gate Sourc e Voltage
ID= 0. 2A
GATE- SOURC E VOLTAGE : VGS[V]
Ta=25°C
Pulsed
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
P-ch
zElectrical characteristic curve
0.2
VGS= - 10.0V
V
VGS= -1.5V
VGS= -1.2V
GS
V
GS
0.15
[A]
D
0.1
0.05
DRAIN CURRENT : -I
0
0 0.2 0.4 0.6 0.8 1
DRAIN-SOURCE VOLTAGE : -VDS[V] DR AIN-SOU RCE VOLT AGE : -VDS[V]
Fi g.1 T ypical output char acter isti cs(Ⅰ) Fig .2 Typical output char acteris tics (Ⅱ)
= -4.5V
= -3.2V
Ta=25°C
Pulsed
VGS= -2.5V
V
= -2.0V
GS
V
= -1.8V
GS
VGS= -1.0V
0.2
[A]
D
0.15
0.1
DRAIN CURRENT : -I
0.05
0
VGS= -4.5V
VGS= -2.5V
V
= -1.8V
GS
V
= -1.5V
GS
0246 810
VGS= -1.2V
VGS= -1.0V
Ta= 25°C
Pulsed
1
VDS= -10V
Pulsed
[A]
0.1
D
Ta= 125°C
Ta= 75°C
0.01
Ta= 25°C
Ta= - 25°C
0.001
DRAIN CURRENT : -I
0.0001
00.5 11.5
GATE- SOURC E VOLTAGE : - VGS[V]
Fi g.3 T ypical Trans fer C haract eris tics
Data Sheet EM6M2
10000
Ta=25°C
Pulsed
]
Ω
(ON)[m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOU RCE ON- STATE
100
0.001 0.01 0.1 1
DRAIN-CURRENT : -I
Fi g.4 Stati c Dr ain-Sour ce On-St ate
Resi stance vs. Dr ain Current(Ι)
10000
VGS= -1.8V
Pulsed
]
Ω
(ON)[m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0.01 0.1 1
DRAIN-CURRENT : -ID[A]
Fi g.7 Stati c Drai n-Sourc e On-State
Resi stance vs. Dr ain Current(Ⅳ)
VGS= -1.2V
V
= -1.5V
GS
V
= -1.8V
GS
V
= -2.5V
GS
V
= -4.5V
GS
[A]
D
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10000
VGS= -4.5V
Pulsed
]
Ω
(ON)[m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0.0 1 0. 1 1
DRAIN-CURRENT : -ID[A]
Fi g.5 St atic D rai n-Sour ce On- State
Resi stance vs. Dr ain Current(Π)
10000
VGS= -1.5V
Pulsed
]
Ω
(ON)[m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOURCE ON-STATE
100
0.001 0.01 0.1
Fi g.8 Stati c Dr ain-Sour ce On-Stat e
Resi stance vs. Dr ain Current(Ⅴ)
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
DRAIN-CURRENT : -I
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
[A]
D
10000
VGS= -2.5V
Pulsed
]
Ω
(ON)[m
DS
1000
RESIST ANCE : R
STATIC DRAIN-SOU RCE ON- STATE
100
0.001 0.01 0.1 1
DRAIN-CURRENT : -ID[A]
Fi g.6 Stati c Dr ain-Sour ce On-Stat e
Resi stance vs. Dr ain Current(Ⅲ)
10000
VGS= -1.2V
Pulsed
]
Ω
(ON)[m
DS
1000
RESIST ANCE : R
STATI C DRAIN -SOUR CE ON- STATE
100
0.001 0. 01 0.1
DRAIN-CURRENT : -I
Fi g.9 St atic D rai n-Sour ce On- State
Resi stance vs. Dr ain Current(Ⅵ)
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
[A]
D
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
Data Sheet EM6M2
1.0
VDS= - 10V
Pulsed
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
0.1
FOR WARD TRANSF ER ADM ITTANC E : |Yfs| [S]
0.01 0.1 1
DRAIN-CURRENT : -ID[A]
Fi g.10 For ward Tr ansfer Admi ttance
vs. Drain Curr ent
1000
td(off)
t
100
10
SWITC HING TIME : t [ns]
t
r
1
0.01 0.1 1
Fig.13 Switching Characteristics
f
td(on)
DRAIN-CURRENT : -ID[A]
Ta= 25°C
= - 10V
V
DD
V
=-4.5V
GS
=10Ω
R
G
Pulsed
1
VGS=0V
Pulsed
0.1
REVERSE DRAIN CURRENT : -Is [A]
0.01
00.511.5
SOUR CE-D RAIN VOLT AGE : -VSD [V]
Fi g.11 Rever se Drai n Curr ent
vs. Sourse- Drain Voltage
5
[V]
4
GS
3
2
1
GATE- SOURC E VOLTAGE : -V
0
00.511.5
TOTAL GATE CH ARGE : Qg [nC]
Fi g.14 D ynamic I nput Charac teris tics
Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta= 25°C
V
= - 10V
DD
= -0.2A
I
D
=10Ω
R
G
Pulsed
5
]
Ω
4
(ON)[
DS
3
2
RESIST ANCE : R
1
STATIC DRAIN-SOURCE ON-STATE
0
1000
100
10
CAPAC ITANCE : C [pF]
1
0.01 0. 1 1 10 100
ID= -0.2A
ID= - 0.01A
0246810
GATE-SOU RCE VOLTAGE : - VGS[V]
Fi g.12 Stati c Dr ain-Sour ce On-St ate
Resistance vs. Gate Source Voltag e
Ta=25°C
f=1M Hz
=0V
V
GS
Coss
DR AIN-SOU RCE VOLT AGE : -V
Fi g.15 Typic al Capaci tance
vs. Drain-Source Voltag e
Ciss
Crss
Ta= 25°C
Pulsed
DS
[V]
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
Fig.2-1 Switching Time Measurement circuit
V
Fig.2-2 Switching Waveforms
N-ch
zMeasurement circuit
Data Sheet EM6M2
Pulse Width
V
R
G
I
D
GS
D.U.T.
Fig.1-1 Switching Time Measurement circuit
P-ch
zMeasurement circuit
V
GS
I
D
R
G
90%
90%
t
t
d
（off）
d（off）
t
50%
off
50%
10%
90%
t
f
t
off
10%
90%
t
f
V
V
DS
R
L
V
DD
V
GS
V
DS
R
L
V
DD
V
50%
GS
10%
t
d（on）
10%
90%
t
r
t
on
DS
Fig.1-2 Switching Waveforms
Pulse Width
10%
50%
10%
DS
t
d
（on）
90%
t
r
t
on
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual proper ty or other rights held by ROHM and
other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
Notice
The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specied in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injur y, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transpor tation equipment, aerospace machinery, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
any of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specied herein that may
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obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
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