ROHM EM6M1 Schematic [ru]
EM6M1
Transistors
2.5V Drive Nch+Pch MOSFET
EM6M1
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zFeatures
1) Nch MOSFET and Pch MOSFET are put in EMT6 package.
2) High-speed switching.
3) Low voltage drive (2.5V drive).
4) Built-in G-S Protection Diode.
zApplications
Switching
zPackaging specifications zInner circuit
EMT6
Each lead has same dimensions
Abbreviated symbol : M01
Type
EM6M1
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
(6)
∗2
(5)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
(1)
(2)
zAbsolute maximum ratings (Ta=25°C)
30
±
20
±0.1
±0.4
Limits
150
120
Tr2 : P-ch
−20
±12
±0.2
±0.4
Unit
VV
VV
AI
AI
mW / TOTAL
mW / ELEMENT
°CTch 150
°CTstg −55 to +150
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Range of storage temperature
∗1 Pw 10µs, Duty cycle 1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Symbol
DSS
GSS
D
∗1
DP
∗2
P
D
Tr1 : N-ch
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD pro tection circuit.
(4)
∗1
∗2
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(3)
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
1/6
Transistors
N-ch
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
P-ch
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
I
GSS
V
(BR) DSS
I
V
GS (th)
R
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
GSS
DSS
Y
Q
DSS
t
t
t
t
oss
rss
oss
rss
iss
r
gd
∗
∗
fs
iss
∗
∗
r
∗
∗
f
∗
g
∗
gs
∗
gd
∗
∗
fs
∗
∗
∗
∗
f
∗
g
∗
gs
∗
Min.
Typ. Max.
Unit
−−±1 µAV
Conditions
= ±20V, VDS=0V
GS
30 −−VID=10µA, VGS=0V
−−1 µAVDS=30V, VGS=0V
0.8 − 1.5 V VDS=3V, ID=100µAGate threshold voltage
− 58 I
=10mA, VGS=4V
D
− 713ΩΩID=1mA, VGS=2.5V
20 −−mS V
=3V, ID=10mA
DS
− 13 − pF VDS=5V
− 9
−
−
−
−
−
−
−
−−nC RL=150Ω, RG=10Ω
Min.
Typ. Max.
−−±10 µAV
− pF VGS=0V
4
− pF f=1MHz
15
− ns
35
− ns
80
− ns
80
− ns
0.9
− nC
0.2
− nC VGS=4.5V
0.2
Unit
V
DD
5V
ID=10mA
V
GS
=5V
R
L
=500Ω
R
G
=10Ω
V
15V, ID=0.1A
DD
Conditions
= ±12V, VDS=0V
GS
−20 −−VID= −1mA, VGS=0V
−−−1 µAVDS= −20V, VGS=0V
−0.7 −−2.0 V VDS= −10V, ID= −1mAGate threshold voltage
Ω
− 1.0 1.5 I
− 1.1 1.6 Ω
− 2.0 3.0 I
0.2 −−SV
= −0.2A, VGS= −4.5V
D
ID= −0.2A, VGS= −4V
Ω
= −0.2A, VGS= −2.5V
D
= −10V, ID= −0.15A
DS
− 50 − pF VDS= −10V
− 5
−
−
−
−
−
−
−
−−nC RL= 75Ω, RG= 10Ω
− pF VGS= 0V
− pF f=1MHz
5
− ns
9
6
− ns
− ns
35
− ns
45
− nC
1.2
0.2
− nC VGS= −4.5V
0.2
VDD −15V
ID= −0.15A
V
GS
= −4.5V
R
L
= 100Ω
R
G
= 10Ω
V
−15V, ID= −0.2A
DD
EM6M1
2/6
Transistors
N-ch
zElectrical characteristic curve
200m
VDS=3V
100m
Pulsed
50m
20m
10m
5m
2m
1m
0.5m
DRAIN CURRENT : ID(A)
0.2m
0.1m
04
1
GATE-SOURCE VOLTAGE : VGS(V)
Ta=125°C
75°C
25°C
−25°C
2
3
50
Ta=125°C
20
(on) (Ω)
DS
10
5
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
75°C
25°C
−25°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID(A)
V
GS
Pulsed
=4V
STATIC DRAIN-SOURCE
50
Ta=125°C
20
(on) (Ω)
DS
10
5
2
1
ON-STATE RESISTANCE : R
0.5
0.001
75°C
25°C
−25°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
EM6M1
V
GS
=2.5V
Pulsed
Fig.1 Typical Transfer Characteristics
15
(on) (Ω)
DS
10
5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : V
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
ID=0.1A
ID=0.05A
Ta=25°C
Pulsed
GS
50
20
10
5
2
CAPACITANCE : C (pF)
1
0.5
0.1
0.2 0.5 1 2 5 10 20 50
DRAIN-SOURCE VOLTAGE : VDS (V)
Ta=25°C
f=1MH
VGS=0V
C
C
oss
C
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current ( Ι )
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current ( ΙΙ )
0.5
0.2
Ta=−25°C
0.1
0.05
0.02
0.01
0.005
0.002
0.001
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
(V)
1000
Z
iss
rss
SWITHING TIME : t (ns)
25°C
75°C
125°C
0.0001
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05
DRAIN CURRENT : ID (A)
Fig.5 Forward Transfer
Admittance vs. Drain Current
t
500
200
100
50
20
10
5
2
0.1
f
t
d(off)
t
r
t
d(on)
0.2 0.5 1 2 5 10 20 50
DRAIN CURRENT : ID (mA)
V
DS
Pulsed
0.1 0.2 0.5
Ta=25°C
VDD=5V
GS
V
G
R
=3V
(A)
S
SOURCE CURRENT : I
=5V
=10Ω
100
200m
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
SOURCE-DRAIN VOLTAGE : V
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage ( Ι )
Ta=125°C
75°C
25°C
−25°C
V
GS
Pulsed
SD
(V)
=0V
1.510.50
Fig.7 Typical Capacitance vs.
Drain-Source Voltage
Fig.8 Switching Characteristics
3/6
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