EM6M1
Transistors
2.5V Drive Nch+Pch MOSFET
EM6M1
zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zFeatures
1) Nch MOSFET and Pch MOSFET are put in EMT6 package.
2) High-speed switching.
3) Low voltage drive (2.5V drive).
4) Built-in G-S Protection Diode.
zApplications
Switching
zPackaging specifications zInner circuit
EMT6
Each lead has same dimensions
Abbreviated symbol : M01
Type
EM6M1
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
(6)
∗2
(5)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
(1)
(2)
zAbsolute maximum ratings (Ta=25°C)
30
±
20
±0.1
±0.4
Limits
150
120
Tr2 : P-ch
−20
±12
±0.2
±0.4
Unit
VV
VV
AI
AI
mW / TOTAL
mW / ELEMENT
°CTch 150
°CTstg −55 to +150
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Range of storage temperature
∗1 Pw 10µs, Duty cycle 1%
∗2 Mounted on a ceramic board
Continuous
Pulsed
Symbol
DSS
GSS
D
∗1
DP
∗2
P
D
Tr1 : N-ch
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD pro tection circuit.
(4)
∗1
∗2
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(3)
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
1/6
Transistors
N-ch
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
P-ch
zElectrical characteristics (T a=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
I
V
(BR) DSS
I
V
GS (th)
R
DS (on)
C
C
C
t
d (on)
t
d (off)
Q
Q
I
GSS
V
(BR) DSS
I
V
GS (th)
R
DS (on)
Y
C
C
C
t
d (on)
t
d (off)
Q
Q
Q
GSS
DSS
Y
Q
DSS
t
t
t
t
oss
rss
oss
rss
iss
r
gd
∗
∗
fs
iss
∗
∗
r
∗
∗
f
∗
g
∗
gs
∗
gd
∗
∗
fs
∗
∗
∗
∗
f
∗
g
∗
gs
∗
Min.
Typ. Max.
Unit
−−±1 µAV
Conditions
= ±20V, VDS=0V
GS
30 −−VID=10µA, VGS=0V
−−1 µAVDS=30V, VGS=0V
0.8 − 1.5 V VDS=3V, ID=100µAGate threshold voltage
− 58 I
=10mA, VGS=4V
D
− 713ΩΩID=1mA, VGS=2.5V
20 −−mS V
=3V, ID=10mA
DS
− 13 − pF VDS=5V
− 9
−
−
−
−
−
−
−
−−nC RL=150Ω, RG=10Ω
Min.
Typ. Max.
−−±10 µAV
− pF VGS=0V
4
− pF f=1MHz
15
− ns
35
− ns
80
− ns
80
− ns
0.9
− nC
0.2
− nC VGS=4.5V
0.2
Unit
V
DD
5V
ID=10mA
V
GS
=5V
R
L
=500Ω
R
G
=10Ω
V
15V, ID=0.1A
DD
Conditions
= ±12V, VDS=0V
GS
−20 −−VID= −1mA, VGS=0V
−−−1 µAVDS= −20V, VGS=0V
−0.7 −−2.0 V VDS= −10V, ID= −1mAGate threshold voltage
Ω
− 1.0 1.5 I
− 1.1 1.6 Ω
− 2.0 3.0 I
0.2 −−SV
= −0.2A, VGS= −4.5V
D
ID= −0.2A, VGS= −4V
Ω
= −0.2A, VGS= −2.5V
D
= −10V, ID= −0.15A
DS
− 50 − pF VDS= −10V
− 5
−
−
−
−
−
−
−
−−nC RL= 75Ω, RG= 10Ω
− pF VGS= 0V
− pF f=1MHz
5
− ns
9
6
− ns
− ns
35
− ns
45
− nC
1.2
0.2
− nC VGS= −4.5V
0.2
VDD −15V
ID= −0.15A
V
GS
= −4.5V
R
L
= 100Ω
R
G
= 10Ω
V
−15V, ID= −0.2A
DD
EM6M1
2/6
Transistors
N-ch
zElectrical characteristic curve
200m
VDS=3V
100m
Pulsed
50m
20m
10m
5m
2m
1m
0.5m
DRAIN CURRENT : ID(A)
0.2m
0.1m
04
1
GATE-SOURCE VOLTAGE : VGS(V)
Ta=125°C
75°C
25°C
−25°C
2
3
50
Ta=125°C
20
(on) (Ω)
DS
10
5
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
75°C
25°C
−25°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID(A)
V
GS
Pulsed
=4V
STATIC DRAIN-SOURCE
50
Ta=125°C
20
(on) (Ω)
DS
10
5
2
1
ON-STATE RESISTANCE : R
0.5
0.001
75°C
25°C
−25°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
EM6M1
V
GS
=2.5V
Pulsed
Fig.1 Typical Transfer Characteristics
15
(on) (Ω)
DS
10
5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : V
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
ID=0.1A
ID=0.05A
Ta=25°C
Pulsed
GS
50
20
10
5
2
CAPACITANCE : C (pF)
1
0.5
0.1
0.2 0.5 1 2 5 10 20 50
DRAIN-SOURCE VOLTAGE : VDS (V)
Ta=25°C
f=1MH
VGS=0V
C
C
oss
C
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current ( Ι )
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current ( ΙΙ )
0.5
0.2
Ta=−25°C
0.1
0.05
0.02
0.01
0.005
0.002
0.001
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
(V)
1000
Z
iss
rss
SWITHING TIME : t (ns)
25°C
75°C
125°C
0.0001
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05
DRAIN CURRENT : ID (A)
Fig.5 Forward Transfer
Admittance vs. Drain Current
t
500
200
100
50
20
10
5
2
0.1
f
t
d(off)
t
r
t
d(on)
0.2 0.5 1 2 5 10 20 50
DRAIN CURRENT : ID (mA)
V
DS
Pulsed
0.1 0.2 0.5
Ta=25°C
VDD=5V
GS
V
G
R
=3V
(A)
S
SOURCE CURRENT : I
=5V
=10Ω
100
200m
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
SOURCE-DRAIN VOLTAGE : V
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage ( Ι )
Ta=125°C
75°C
25°C
−25°C
V
GS
Pulsed
SD
(V)
=0V
1.510.50
Fig.7 Typical Capacitance vs.
Drain-Source Voltage
Fig.8 Switching Characteristics
3/6
Transistors
P-ch
zElectrical characteristic curve
1
Ta=125°C
(A)
D
0.1
75°C
25°C
−25°C
VDS= −10V
Pulsed
10
(Ω)
DS(on)
Ta=125°C
75°C
25°C
−25°C
VGS= −4.5V
Pulsed
10
(Ω)
DS(on)
Ta=125°C
75°C
25°C
−25°C
EM6M1
VGS= −4V
Pulsed
0.01
DRAIN CURRENT : −I
0.001
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
GATE-SOURCE VOLTAGE : −V
GS
(V)
Fig.1 Typical Transfer Characteristics
10
Ta=125°C
75°C
(Ω)
25°C
−25°C
DS(on)
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01 0.1 1
DRAIN CURRENT : −ID (A)
VGS= −2.5V
Pulsed
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01 0.1 1
DRAIN CURRENT : −ID (A)
Fig.2
Static Drain-Source On-State Resistance
vs. Drain Current ( Ι )
10
(Ω)
DS(on)
VGS= −2.5V
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01 0.1 1
DRAIN CURRENT : −ID (A)
Ta=25°C
Pulsed
VGS= −4V
VGS= −4.5V
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01 0.1 1
DRAIN CURRENT : −ID (A)
Fig.3
Static Drain-Source On-State Resistance
vs. Drain Current ( ΙΙ )
5
(Ω)
4
DS(on)
3
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
012345678910
ID= −0.2A
ID= −0.1A
GATE-SOURCE VOLTAGE : −V
Ta=25°C
Pulsed
GS
(V)
Fig.6
Fig.4
Static Drain-Source On-State Resistance
vs. Drain Current ( ΙΙΙ )
Fig.5
Static Drain-Source On-State Resistance
vs. Drain Current ( Ι )
Static Drain-Source On-State Resistance
vs. Gate-Source Voltage
100
C
iss
10
C
CAPACITANCE : C (pF)
Ta=25°C
f=1MHz
GS=0V
V
0
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : −V
oss
C
rss
DS
(V)
Fig.7 Typical Capacitance vs. Drain-Source Voltage
1000
t
(ns)
100
10
SWITCHING TIME : t
1
0.01 0.1 1
f
t
d(off)
t
d(on)
t
r
DRAIN CURRENT : −ID (A)
Ta=25°C
VDD= −15V
V
R
Pulsed
Fig.8 Switching Characteristics
GS
G
=10Ω
= −4.5V
4.5
Ta=25°C
VDD= −15V
4
(V)
I
D= −0.2A
GS
G= 10Ω
R
3.5
Pulsed
3
2.5
2
1.5
1
0.5
GATE-SOURCE VOLTAGE : −V
0
0 0.2 0.4 0.6 0.8 1 1.2
TOTAL GATE CHARGE : Qg (nC)
Fig.9 Dynamic Input Characteristics
4/6
Transistors
1
Ta=125°C
(A)
S
0.1
SOURCE CURRENT : −I
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75°C
25°C
−25°C
SOURCE-DRAIN VOLTAGE : −V
VGS=0V
Pulsed
SD
(V)
EM6M1
Fig.10 Source Current vs. Source-Drain Voltage
N-ch
zMeasurement circuit
V
I
G(Const.)
GS
R
G
Fig.9 Switching Time Test Circuit
V
GS
R
G
D.U.T.
D
I
D.U.T.
I
D
R
L
V
DD
Pulse Width
90%
t
d(off)
50%
10%
90%
t
f
t
off
t
d(on)
50%
10%
t
on
10%
t
r
90%
V
V
DS
R
L
V
DD
GS
V
DS
Fig.10 Switching Time Waveforms
V
G
V
DS
V
GS
QgsQ
Q
g
gd
Charge
Fig.11 Gate Charge Measurement Circuit
Fig.12 Gate Charge Waveform
5/6
Transistors
P-ch
zMeasurement circuit
V
GS
R
G
I
D
D.U.T.
EM6M1
V
GS
V
DS
R
L
V
DD
V
DS
t
d
(on)
10%
50%
t
90%
on
Pulse Width
10%
t
r
90%
50%
10%
90%
t
d
(off)
t
f
t
off
Fig.11 Switching Time Test Circuit
V
I
G(Const.)
R
G
Fig.13 Gate Charge Measurement Circuit
Fig.12 Switching Time Waveforms
V
G
GS
D
I
D.U.T.
V
DS
R
L
V
GS
Q
V
DD
gsQgd
Q
g
Charge
Fig.14 Gate Charge Waveform
6/6
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
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