ROHM EM6K6 Technical data

Transistor

g

1.8V Drive Nch+Nch MOSFET

EM6K6

zStructure zDimensions (Unit : mm)
Silicon N-channel
MOSFET

zApplications

Switching

zFeatures

1) The MOSFET elements are independent,
eliminating mutual interference.

2) Mounting cost and area can be cut in half.

3) Low on-resistance.

4) Low voltage drive (1.8V) makes this device i deal for
portable equipment.

EMT6

Abbreviated symbol : K06

EM6K6

Each lead has same dimensions

zPackaging specifications zEquivalent circuit

Package

Type

Code
Basic ordering unit

(pieces)

EM6K6

zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Total power dissipation

Channel temperature
Storage temperature

∗

1 Pw≤10µs, Duty cycle≤1%

∗

2 Each terminal mounted on a recommended land.

Continuous
Pulsed

Tapin

T2R

8000

Symbol

DSS

V
V

GSS

D

I

I

DP

P

D

Tch

Tstg

∗

1

∗

2

Limits Unit

20

±8
±300
±600

150

mW / ELEMENT120

150

−55 to +150

V

V
mA
mA

mW / TOTAL

°C
°C

Tr1

∗
Gate
Protection

(1)

∗ A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.

Diode

zThermal resistance

Parameter

Channel to ambient

∗ Each terminal mounted on a recommended land

Symbol Limits Unit

Rth(ch-a)

833

∗

°C/W / TOTAL

°C/W / ELEMENT1042

Gate
Protection
Diode
∗

Tr2

(2) (3)

(4)(5)(6)

(1)Tr1 Source
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Source
(5)Tr2 Gate
(6)Tr1 Drain

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Transistor

zElectrical characteristics (T a=25°C)
<It is the same characteristics for the Tr1 and Tr2>

Typ. Max. Unit Conditions

Min.

GSS

−

20

DSS

GS(th)

−

0.3

−

∗

DS(on)

−

−

∗

400

C

iss

−

oss

rss

d(on)

t

d(off)

t

−

−

∗

−

∗

r

−

∗

−

∗

f

−

Min. Typ. Max.

∗

−−1.2 V IS= 100mA, VGS=0VForward voltage

−

−

−

−

0.7

0.8 1.2

1.0 1.4

−

25
10
10

5
10
15
10

t

Symbol

I

V

(BR)DSS

I

V

R

|Yfs|

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time

C
C

t
Rise time
Turn-off delay time

t
Fall time

∗ Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

V

∗ Pulsed

SD

zElectrical characteristic curves

±10

−

1.0

1.0

1.0

−

−

−

−

−

−

−

−

Unit

GS

µAV

V

µA

V

Ω

Ω

Ω

ms
pF
pF
pF

ns
ns
ns
ns

=±8V, VDS=0V

I

D

=1mA, VGS=0V

DS

=20V, VGS=0V

V

DS

=10V, ID=1mA

V
I

D

=300mA, VGS=4.0V

D

=300mA, VGS=2.5V

I
I

D

=300mA, VGS=1.8V

I

D

=300mA, VDS=10V

V

DS

=10V

V

GS

=0V
f=1MHz
I

D

=150mA, VDD 10V

GS

=4.0V

V

L

=67Ω

R

G

=10Ω

R

EM6K6

Conditions

1

V

DS

=10V

Pulsed

0.1

(A)

D

0.01

0.001

0.0001

DRAIN CURRENT : I

0.00001

0.0 0.5 1.0 1.5

GATE-SOURCE VOLTAGE : VGS (V)

Ta=125°C

75°C
25°C

−25°C

Fig.1 Typical transfer characteristics

10

(mΩ)

Ta=125°C

DS(on)

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.1

0.01 0.1 1

Fig.2 Static drain-source on-state

75°C
25°C

−25°C

DRAIN CURRENT : ID (A)

resistance vs. drain current (Ι)

V

GS

Pulsed

=4V

10

(mΩ)

DS(on)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

Fig.3 Static drain-source on-state

Ta=125°C

75°C
25°C

−25°C

1

0.1

0.01 0.1 1
DRAIN CURRENT : ID (A)

resistance vs. drain current (ΙΙ)

V

GS

Pulsed

=2.5V

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