Transistor
g
1.8V Drive Nch+Nch MOSFET
EM6K6
zStructure zDimensions (Unit : mm)
Silicon N-channel
MOSFET
zApplications
Switching
zFeatures
1) The MOSFET elements are independent,
eliminating mutual interference.
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (1.8V) makes this device i deal for
portable equipment.
EMT6
Abbreviated symbol : K06
EM6K6
Each lead has same dimensions
zPackaging specifications zEquivalent circuit
Package
Type
Code
Basic ordering unit
(pieces)
EM6K6
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
∗
1 Pw≤10µs, Duty cycle≤1%
∗
2 Each terminal mounted on a recommended land.
Continuous
Pulsed
Tapin
T2R
8000
Symbol
DSS
V
V
GSS
D
I
I
DP
P
D
Tch
Tstg
∗
1
∗
2
Limits Unit
20
±8
±300
±600
150
mW / ELEMENT120
150
−55 to +150
V
V
mA
mA
mW / TOTAL
°C
°C
Tr1
∗
Gate
Protection
(1)
∗ A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
Diode
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol Limits Unit
Rth(ch-a)
833
∗
°C/W / TOTAL
°C/W / ELEMENT1042
Gate
Protection
Diode
∗
Tr2
(2) (3)
(4)(5)(6)
(1)Tr1 Source
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Source
(5)Tr2 Gate
(6)Tr1 Drain
1/3
Transistor
zElectrical characteristics (T a=25°C)
<It is the same characteristics for the Tr1 and Tr2>
Typ. Max. Unit Conditions
Min.
GSS
−
20
DSS
GS(th)
−
0.3
−
∗
DS(on)
−
−
∗
400
C
iss
−
oss
rss
d(on)
t
d(off)
t
−
−
∗
−
∗
r
−
∗
−
∗
f
−
Min. Typ. Max.
∗
−−1.2 V IS= 100mA, VGS=0VForward voltage
−
−
−
−
0.7
0.8 1.2
1.0 1.4
−
25
10
10
5
10
15
10
t
Symbol
I
V
(BR)DSS
I
V
R
|Yfs|
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
C
C
t
Rise time
Turn-off delay time
t
Fall time
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter Symbol
V
∗ Pulsed
SD
zElectrical characteristic curves
±10
−
1.0
1.0
1.0
−
−
−
−
−
−
−
−
Unit
GS
µAV
V
µA
V
Ω
Ω
Ω
ms
pF
pF
pF
ns
ns
ns
ns
=±8V, VDS=0V
I
D
=1mA, VGS=0V
DS
=20V, VGS=0V
V
DS
=10V, ID=1mA
V
I
D
=300mA, VGS=4.0V
D
=300mA, VGS=2.5V
I
I
D
=300mA, VGS=1.8V
I
D
=300mA, VDS=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=150mA, VDD 10V
GS
=4.0V
V
L
=67Ω
R
G
=10Ω
R
EM6K6
Conditions
1
V
DS
=10V
Pulsed
0.1
(A)
D
0.01
0.001
0.0001
DRAIN CURRENT : I
0.00001
0.0 0.5 1.0 1.5
GATE-SOURCE VOLTAGE : VGS (V)
Ta=125°C
75°C
25°C
−25°C
Fig.1 Typical transfer characteristics
10
(mΩ)
Ta=125°C
DS(on)
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01 0.1 1
Fig.2 Static drain-source on-state
75°C
25°C
−25°C
DRAIN CURRENT : ID (A)
resistance vs. drain current (Ι)
V
GS
Pulsed
=4V
10
(mΩ)
DS(on)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
Fig.3 Static drain-source on-state
Ta=125°C
75°C
25°C
−25°C
1
0.1
0.01 0.1 1
DRAIN CURRENT : ID (A)
resistance vs. drain current (ΙΙ)
V
GS
Pulsed
=2.5V
2/3
Transistor
10
(mΩ)
DS(on)
Ta=125°C
1
75°C
25°C
−25°C
V
GS
Pulsed
=1.8V
EM6K6
1
(A)
S
0.1
V
GS
Pulsed
Ta=125°C
75°C
25°C
−25°C
=0V
100
10
C
rss
Ta=25°C
f=1MH
VGS=0V
C
iss
C
oss
Z
SOURCE CURRENT : I
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.1
0.01 0.1 1
DRAIN CURRENT : ID (A)
Fig.4 Static drain-source on-state
resistance vs. drain current (ΙΙΙ)
0.01
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.5 Source current vs.
1000
100
10
SWITHING TIME : t (ns)
1
0.01 0.1
DRAIN CURRENT : ID (A)
Fig.7 Switching characteristics
Ta=25°C
DD
V
GS
V
G
R
Pulsed
t
d(off)
t
f
t
d(on)
t
r
=10V
=4V
=10Ω
1
zSwitching characteristics measurement circuit
source-drain voltage
Pulse width
CAPACITANCE : C (pF)
1
1.510.50.0
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.6 Typical capacitance vs.
drain-source voltage
I
V
R
G
D
GS
D.U.T.
V
R
L
V
DD
Fig.8 Switching time measurement circuit
DS
t
d (on)
50%
10%
t
on
10%
t
r
90%
V
GS
V
DS
Fig.9 Switching time waveforms
90%
t
d (off)
50%
10%
90%
t
f
t
off
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
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