ROHM EM6K1 Schematic [ru]
Transistor
e
e
2.5V Drive Nch+Nch MOS FET
EM6K1
zStructure
Silicon N-channel MOS FET
zFeatures
1) Two 2SK3019 transistors in a single EMT package.
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
4) Low on-resistance.
5) Low voltage drive (2.5V) makes this device i deal for
portable equipment.
zApplications
Interfacing, switching (30V, 100mA)
zPackaging specifications zEquivalent circuit
Taping
T2R
8000
Type
EM6K1
Package
Code
Basic ordering unit
(pieces)
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and T r2.>
Parameter
Drain−source voltage
Gate−source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
Continuous
Pulsed
Symbol
DSS
V
VGSS
D
I
IDP
PD
Tch
Tstg
∗
1
∗
2
Limits Unit
30
±20
±100
±400
150
150
−55 to +150
zExternal dimensions (Unit : mm)
EMT6
1.6
1.0
0.5
0.5
(5)
(6)
(4)
1.2
1.6
(2)
(1)
1pin mark
(3)
0.22
Each lead has same dimensions
Abbreviated symbol : K1
Gate
Protection
Diode
∗
Tr1
Tr2
∗
Gate
Protection
(1)
∗ A protection diode has been built in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
V
V
mA
mA
mW / TOTAL
mW / ELEMENT120
°C
°C
Diode
(2) (3)
0.13
EM6K1
0.5
(4)(5)(6)
(1)Tr1 Sourc
(2)Tr1 Gate
(3)Tr2 Drain
(4)Tr2 Sourc
(5)Tr2 Gate
(6)Tr1 Drain
Rev.C 1/3
Transistor
5
s
s
)
0
.
5
)
5
)
0
zElectrical characteristics (T a=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter Symbol
GSS
Gate−source leakage
Drain−source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain−source on−starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn−on delay time
Rise time
Turn−off delay time
Fall time
I
V
(BR)DSS
I
V
R
DS(on)
R
DS(on)
Y
C
C
C
d(on)
t
d(off)
t
DSS
GS(th)
fs
iss
oss
rss
r
t
f
t
zElectrical characteristic curves
0.15
(A)
D
0.1
0.05
DRAIN CURRENT : I
4V
0
01234
DRAIN-SOURCE VOLTAGE : V
3V
3.5V
2.5V
2V
VGS=1.5V
DS
Fig.1 Typical Output Characteristic
(V)
200m
100m
50m
(A)
D
20m
10m
5m
2m
1m
0.5m
DRAIN CURRENT : I
0.2m
0.1m
Fig.2 Typical Transfer Characteristic
50
) (Ω)
(on
DS
Ta=125
−25
°C
75
°C
25
°C
°C
20
10
5
V
GS
Pulsed
=4V
(on) (Ω)
DS
Typ. Max. Unit Conditions
Min.
GS
=
±20V, V
DS
=
−
−
±1
µAV
30
0.8
20
04
50
20
10
−
−
−
−
1.0
−
1.5
−
5
713
−
13
−
9
−
4
−
15
−
35
−
80
−
80
−
V
DS
=3V
Pulsed
1
75°C
25°C
−25°C
2
GATE-SOURCE VOLTAGE : V
Ta=125°C
5
−
8
−
−
−
−
−
−
−
−
Ta=125°C
75°C
25°C
−25°C
µA
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
3
V
V
GS
V
Pulsed
(V)
GS
I
V
V
I
I
V
V
V
f
I
V
R
R
=2.5V
D
=
10µA, V
DS
=
DS
=
D
=
10mA, V
D
=
1mA, V
DS
=
DS
=
GS
=
=
1MHz
D
=
10mA, V
GS
=
L
=
500Ω
G
=
10Ω
30V, V
3V, I
3V, I
5V
0V
5V
0V
GS
=
0V
GS
=
0V
D
=
100µA
GS
=
4V
GS
=
2.5V
D
=
10mA
DD
5V
2
(th) (V
GS
1.5
1
0.5
GATE THRESHOLD VOLTAGE : V
0
−25 25 50 75 100 125 15
−50 0
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate Threshold Voltage vs
Channel Temperature
15
) (Ω)
(on
DS
10
EM6K1
V
DS
=3V
I
D
=0.1mA
Ta=25
°C
Pulsed
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.
DRAIN CURRENT : I
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (Ι
D
(A)
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.
DRAIN CURRENT : I
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ
D
(A)
Rev.C 2/3
5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
0 5 10 15 2
GATE-SOURCE VOLTAGE : V
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
ID=0.1A
ID=0.05A
GS
(
V)
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