ROHM DTDG23YP Technical data
DTDG23YP
IN
R
1
=2.2kΩ R2=10kΩ
OUT
GND
OUT
IN
GND
R
2
R
1
Transistors
1A / 60V Digital transistor
(with built-in resistors and zener diode)
DTDG23YP
zApplicat ions
Inverter, Interface, Driver
zFeatures
1) High DC current gain. (Min. 300 at V
/ IO=2V /
O
0.5A)
2) Low Vo(on). (Typ. 0.4V at I
/ II=500mA / 5mA)
O
3) Built-in zener diode gives strong protection against
reverse surge by L-load (an inductive load).
zStructure
NPN epitaxial planar silicon transistor
(with built-in resistors and zener diode)
zPackaging specifications
MPT3
Taping
T100
1000
Part No.
DTDG23YP
Package
Packaging type
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C) zEquivalent circ uit
Parameter Symbol
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
<
1 Pw 10ms, Duty cycle 2%
∗
−
2 When mounted on 40 40 0.7mm ceramic board.
∗
<
−
+
+
CC
V
V
I
C
I
CP
Pd
Tj
Tstg
IN
Limits
60±10
−6 to
−55 to
1
2
1.5
150
+40
+150
1
∗
2
∗
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max.
I(off)
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Emitter-base resistance
Characteristics of built-in transistor
∗
Rev.B 1/2
V
V
I(on) 2
VO(on)
II
IO(off)
GI
fT
R
1 1.54 2.2 2.86
R2
−
−
−
−
300
−
∗
7
zExternal dimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : E02
Unit
V
A
A
W
C
C
Unit
−
−
−
−
−
−−
80
10
0.3
0.4
3.6
0.5
13
−
V
V
mA
µA
−
MHz
−
kΩ
kΩ
4.5
1.6
(3)(2)(1)
0.5
0.40.4
1.51.5
3.0
1.5
0.5
2.5
4.0
1.0
0.4
Conditions
CC=5V , IO=100µA
V
O=0.4V , IO=100mA
V
O/II=500mA/5mA
I
V
I=5V
V
CC=40V , VI=0V
V
O=2V , IO=500mA
V
CE=5V , IE= −0.1A , f=30MHz
−
−
Transistors
.0
e
zElectrical characteristics curves
100
50
(V)
20
I(on)
10
5
Ta= −40°C
25°C
2
125°C
1
INPUT VOLTAGE : V
0.5m
0.2m
0.1m
1m 2m 5m 10m 20m 50m
OUTPUT CURRENT : I
Fig.1 Input voltage vs. output current
(ON characteristics)
O
VO=0.4V
500m200m100m
(A)
1
500m
(V)
200m
O(on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
1m 10m2m 5m 20m 50m100m200m 500m 1
Ta=125°C
OUTPUT CURRENT : I
Fig.4 Output voltage vs. Output current
25°C
−40°C
IO / II=100/1
O
(A)
10m
5m
2m
1m
(A)
O
500µ
200µ
100µ
50µ
20µ
10µ
5µ
OUTPUT CURRENT : I
2µ
1µ
1
03
Ta=125°C
25°C
−40°C
INPUT VOLTAGE : V
Fig.2 Output current vs. Input voltag
(OFF characteristics)
I(off)
(V)
VCC=5V
2.52.01.51.00.5
DTDG23YP
10k
5k
I
2k
1k
500
200
100
DC CURRENT GAIN : G
50
20
10
1m 10m 20m 50m2m 5m 100m200m 500m 1
Ta=125°C
25°C
−40°C
OUTPUT CURRENT : I
Fig.3 DC current gain vs. Output current
VO=2V
O
(A)
Rev.B 2/2
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