ROHM DTDG14GP Datasheet

DTDG14GP

Transistors

Digital transistor (built in resistor and
zener diode) Driver (60V, 1A)

DTDG14GP

External dimensions

Features

!!!!

(typ. h

FE

.

FE

=750 VCE/IC=2V/0.5A)

1) High h

2) Low saturation voltage,

CE(sat)

V

=0.4V

(IC/IB=500mA/5mA)

3) Built-in zener diode to protect the
transistor against reverse voltages
when connected to alow load.

Structure

!!!!

NPN digital transistor
(with single built resistor and zener
diode)

!!!!

ROHM : MPT3
EIAJ : SC-62

(Units : mm)

+0.2

4.5

−0.1

1.6±0.1

0.5±0.1

−0.1

+0.2

2.5

4.0±0.3

0.5±0.1

0.4±0.1

1.5±0.1

1.0±0.2

3.0±0.2

Abbreviated symbol : E01

+0.2

1.5

−0.1

(3)(2)(1)

0.4±0.1

1.5±0.1

+0.1

0.4

−0.05

(1) Base
(2) Collector
(3) Emitter

Absolute maximum ratings

!!!!

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature
Storage temperature

∗1 Pw≤10ms, Duty cycle≤1/2
∗2 When mounted on a 40

×40×

(Ta = 25°C)

Symbol Limits Unit

CBO

V
V

CEO

EBO

V

C

I

CP

P

C

Tj

Tstg

0.7 mm ceramic board.

±

10 V

60
60±10

1I
2

0.5
2

150

−55~+150

V
V5
A

A(Pulse)

W

°C
°C

∗1

∗2

Equivalent circuit

!!!!

(1)

R

(1) : Base
(2) : Collector
(3) : Emitter

(2)

(3)

R=10kΩ

Transistors

Electrical characteristics

!!!!

Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Emitter-base resistance
Transition frequency

∗Transition frequency of the device

Packaging specifications

!!!!

Part No.
DTDG14GP

transfer ratio

Package
Packaging type Taping
Code
Basic ordering

unit (pieces)

(Ta = 25°C)

MPT3

T100
1000

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

VCE(sat)

h

FE

R
f

T

Min.

Typ. Max. Unit Conditions

50

−

50

−

5

−

−

−

300

−

−−

300

−

7

10

−

80

580

70
70

0.5

0.4

13

−

−

−

VI
V

I

V

I

µA

V
V

µA

I

V

V

−

kΩ

V

MHz

C

=50µA

C

=1mA

E

=720µA

CB

=40V

EB

=4V

C/IB

=500mA/5mA

CE

=2V, IC=500mA

CE

=5V, IE=−0.1A, f=30MHz

DTDG14GP

−

∗

Electrical characteristic curves

!!!!

10

5
2

(A)

C

1

500m
200m

100m

50m
20m

10m

5m

COLLECTOR CURRENT : I

2m
1m

COLLECTOR TO EMITTER VOLTAGE : V

I

CP

P

DC

14W×18l×0.8t(Units : mm)
When mounted on glass epoxy
∗Single pulse

1 2 5 100m 200m 500m 10 20 50 100

W

=100ms

P

W

=

Fig.1 Safe operating area

10ms∗

∗

10k

5k

FE

2k
1k

500

200

100

50

DC CURRENT GAIN : h

20
10

10m 20m 50m 100m200m500m 1 2 5 10

CE

(V)

COLLECTOR CURRENT : IC (A)

VCE=5V

2V
1V

Ta=25°C

Fig.2 DC current gain vs. collector
current

10

(V)

5

CE(sat)

2
1

500m

IC/IB=200

200m
100m

50m

20m
10m

COLLECTOR SATURATION VOLTAGE : V

100

50

10m

20m 50m

100m

COLLECTOR CURRENT : IC (

200m 500m 1 1025

Ta=25°C

Fig.3 Collector-emitter saturation
voltage vs. collector current

A)