ROHM DTDG14GP Schematic [ru]
DTDG14GP
Transistors
1A / 60V Digital Transistor
(with built-in resistor and zener diode)
DTDG14GP
zApplicat ions
Driver
zFeatures
1) High h
FE
.
300 (Min.) (V
CE
/ IC=2V / 0.5A)
2) Low saturation voltage,
(V
CE(sat)
=0.4V at IC / IB=500mA / 5mA)
3) Built-in zener diode gives strong protection against
reverse surge by L- load (an inductive load).
zStructure
NPN epitaxial planar silicon transistor
(with built-in resistor and zener diode)
zPackaging specifications
Part No.
DTDG14GP
Package
Packaging type Taping
Code
Basic ordering
unit (pieces)
MPT3
T100
1000
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Pw≤10ms, Duty cycle≤1/2
∗2 When mounted on a 40
×40×0.7 mm ceramic board.
Symbol Limits Unit
CBO
V
V
CEO
EBO
V
I
CP
P
Tj
Tstg
C
C
60
±
10 V
60±10
1I
2
0.5
2
150
−55 to +150
zExternal dimensions (Unit : mm)
(1)
ROHM : MPT3
EIAJ : SC-62
Abbreviated symbol : E01
zEquivalent circ uit
(1)
(1) : Base
(2) : Collector
(3) : Emitter
R
R=10kΩ
V
V5
A
∗1
∗2
A
W
°C
°C
4.5
1.6
(3)(2)
0.5
0.40.4
1.51.5
3.0
(2)
(3)
0.5
2.5
4.0
1.0
1.5
(1) Base
(2) Collector
(3) Emitter
0.4
Rev.A 1/2
Transistors
0
)
0
r
0
V)
t
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Emitter-base resistance
Transition frequency
∗ Characteristics of built-in transistor
zElectrical characteristic curves
10
5
2
1
500m
200m
100m
50m
20m
10m
5m
COLLECTOR CURRENT : IC (A)
2m
1m
COLLECTOR TO EMITTER VOLTAGE : VCE (V
I
CP
DC
14W×18l×0.8t(Unit : mm)
When mounted on glass epoxy
∗Single pulse
1 2 5 100m 200m 500m 10 20 50 10
P
W
=100ms
P
Fig.1 Safe operating area
W
=
10ms∗
∗
Min.
Typ. Max. Unit Conditions
CBO
BV
BV
BV
I
CBO
I
EBO
VCE(sat)
h
10k
FE
500
200
100
DC CURRENT GAIN : h
50
−
CEO
50
−
EBO
5
−
−
−
300
−
−−
FE
300
R
f
T
∗
5k
2k
1k
50
20
10
10m 20m 50m 100m200m500m 1 2 5 1
COLLECTOR CURRENT : IC (A)
−
7
10
−
80
VCE=5V
Fig.2 DC current gain vs. collecto
current
70
70
−
0.5
580
0.4
−
13
−
VI
V
I
I
V
V
µA
V
µA
I
V
V
−
kΩ
V
MHz
DTDG14GP
C
=50µA
C
=1mA
E
=720µA
CB
=40V
EB
=4V
C/IB
=500mA/5mA
CE
=2V, IC=500mA
−
CE
=5V, IE=−0.1A, f=30MHz
10
Ta=25°C
2V
1V
(
5
CE(sat)
2
1
500m
IC/IB=200
200m
100m
50m
20m
10m
COLLECTOR SATURATION VOLTAGE : V
100
50
10m
20m 50m
100m
COLLECTOR CURRENT : IC (
200m 500m 1 1
25
Fig.3 Collector-emitter saturation
voltage vs. collector curren
Ta=25°C
A)
Rev.A 2/2
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