ROHM DTD743ZE, DTD743ZM Technical data
Transistors
DTD743ZE / DTD743ZM
200mA / 30V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTD743ZE / DTD743ZM
zApplications
Inverter, Interface, Driver
zFeature
CE(sat) is lower than conventional products.
1) V
2) Built-in bias resistors enable the co nfiguration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of t hin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for
operation, making the devi ce design easy.
zStructure
NPN epitaxial plannar sil icon transisto r
(Resistor built-in type)
zAbsolute maximum ratings (T a=25°C) zPackaging specifications
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Symbol
V
CC
IN
V
∗1
C (max)
I
∗2
P
D
Tj
Tstg
Limits
DTD743ZE DTD743ZM
30
−5 to +20
200
150
150
−55 to +150
zElectrical characteristics (T a=25°C) zEquivalent circuit
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
∗
V
V
V
O(on)
I
O(off)
G
R
R2/R
I(off)
I(on)
I
f
I
I
T
1
1
Typ. Max. Unit Conditions
Min.
−
−
0.3
2.5
−
−
−
140
−
3.29
8.0
−
70
−
−
−
260
4.7
10
V
−
mV
300
mA
1.4
µA
0.5
−
−
MHz
−
6.11
kΩ
12
−−
Rev.A 1/2
zDimensions (Unit : mm)
DTD743ZE
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
DTD743ZM
VMT3
Unit
V
V
mA
mW
C
C
Part No.
DTD743ZE
DTD743ZM
V
CC
= 5V, IO= 100µA
O
= 0.3V, IO= 20mA
V
I
O/II
= 50mA / 2.5mA
I
= 5V
V
V
CC
= 30V, VI=0V
O
= 2V, IO= 100mA
V
V
CE
= 10V, IE= −5mA, f=100MHz
−
1.6
0.3
(3)
(2)
0.2
0.5
0.5
1.0
Abbreviated symbol : P23
1.2
0.32
(3)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : P23
Package
0.7
0.55
1.6
0.8
(1)
0.2
0.15
Each lead has same dimensions
0.2
1.2
0.8
(2)
0.13
0.2
0.5
Each lead has same dimensions
(1) GND
0.1Min.
(2) IN
(3) OUT
(1) IN
(2) GND
(3) OUT
EMT3 VMT3
Packaging type Taping Taping
Code
Basic ordering
unit (pieces)
TL
3000
−
R
1
IN
R
2
IN
GND
R1=4.7kΩ / R2=47kΩ
T2L
8000
−
OUT
GND
OUT
Transistors
zElectrical characteristic curves
200
Ta=25
180
160
(mA)
O
140
120
100
80
60
40
OUTPUT CURRENT : I
20
0
Fig.1 Output Current vs. Output Voltage
℃
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
OUTPUT VOLTAGE : VO (V)
Ii=1.0mA
Ii=0.9mA
Ii=0.8mA
Ii=0.7mA
Ii=0.6mA
Ii=0.5mA
Ii=0.4mA
Ii=0.3mA
Ii=0.2mA
Ii=0.1mA
Ii=0mA
100
V0=0.3V
(V)
I
Ta=－40
10
℃
25℃
85℃
125
℃
1
INPUT VOLTAGE : V
0.1
0.01 0.1 1 10 100 1000
OUTPUT CURRENT : IO (mA)
Fig.2 Input Voltage vs. Output Current
DTD743ZE / DTD743ZM
100
VCC=5V
(mA)
O
10
Ta=125
1
OUTPUT CURRENT : I
0.1
00.511.52
INPUT VOLTAGE : V
Fig.3 Output Current vs. Input Voltage
85℃
25℃
－40℃
(off) (V)
I
℃
1
IO/II = 20/1
(on) (V)
O
Ta=125
℃
85℃
25℃
0.1
－40℃
I
1000
100
VO=5V
Ta=125
℃
85℃
25℃
10
－40℃
DC CURENT GAIN : G
1
0.01 0.1 1 10 100 1000
OUTPUT CURENT : I
(mA)
O
OUTPUT VOLTAGE : V
0.01
0.1 1 10 100 1000
OUTPUT CURRENT : I
(mA)
O
Fig.4 DC Current Gain vs. Output Current Fig.5 Output Voltage vs. Output Current
Rev.A 2/2
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