ROHM DTD743XE, DTD743XM Technical data
200mA / 30V Low VCE (sat) Digital transistors
(with built-in resistors)
DTD743XE / DTD743XM
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
Feature
1) V
CE(sat) is lower than the conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
Structure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
Absolute maximum ratings (Ta=25C) Packaging specifications
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Symbol
V
CC
IN
V
∗1
C (max)
I
∗2
P
D
Tj
Tstg
Limits
DTD743XE DTD743XM
30
−7 to +20
200
150
150
−55 to +150
Unit
V
V
mA
mW
C
C
Electrical characteristics (Ta=25C) Equivalent circuit
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
∗
V
V
V
I
O(off)
R2/R
I(off)
I(on)
O(on)
I
G
f
R
I
I
T
1
1
Typ. Max. Unit Conditions
Min.
−
−
2.5
140
3.29
1.7
0.3
−
−
−
70
300
−
−
1.4
−
−
500
−
−
260
−
4.7
2.1
−
6.11
2.6
V
CC
V
O
= 0.3V, IO= 20mA
V
mV
I
O/II
mA
I
= 5V
V
nA
V
CC
−
O
= 2V, IO= 100mA
V
MHz
V
CE
kΩ
−−
= 5V, IO= 100μA
= 50mA / 2.5mA
= 30V, VI=0V
= 10V, IE= −5mA, f=100MHz
−
DTD743XE
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
DTD743XM
VMT3
Part No.
DTD743XE
DTD743XM
IN
IN
R1=4.7kΩ / R2=10kΩ
1.6
0.3
(3)
(2)
0.2
0.5
0.5
1.0
Abbreviated symbol : M43
1.2
0.32
(3)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : M43
Package
0.7
0.55
1.6
0.8
(1)
0.2
0.15
Each lead has same dimensions
0.2
1.2
0.8
(2)
0.13
0.2
0.5
Each lead has same dimensions
EMT3 VMT3
0.1Min.
(1) GND
(2) IN
(3) OUT
(1) IN
(2) GND
(3) OUT
Packaging type Taping Taping
Code
Basic ordering
unit (pieces)
TL
3000
T2L
8000
−
R
1
R
2
OUT
GND
OUT
GND
−
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2011 ROHM Co., Ltd. All rights reserved.
2011.11 - Rev.B
VO=0.3V
VO=5V
Ta=125ºC
75ºC
25ºC
-40ºC
II=0.1mA
I
I
=0.A
VO=5V
Ta=125ºC
75ºC
25ºC
-40ºC
IO/II=20/1
Ta=125ºC
75ºC
25ºC
-40ºC
Electrical characteristics curves
240
Ta=25ºC
200
)Am(
C
I : TNERRUC ROTCELLOC
160
120
80
40
0
012345
COLLECTOR TO EMITT ER VOLTAGE : VCE (V)
Fig 1. Output Current vs. Output Voltage Fig 2. Input Voltage vs. Output Current
1000
II=1.0mA
II=0.9mA
II=0.8mA
II=0.7mA
II=0.6mA
II=0.5mA
II=0.4mA
II=0.3mA
II=0.2mA
100
)V(
)
n
o
(I
10
V :
Ta=125ºC
EG
AT
LOV
1
TUPNI
0.1
0.1 1 10 100 1000
75ºC
25ºC
-40ºC
OUTPUT CURRENT : IO (mA)
(ON Characteristics)
100
)A
m
(
O
I
: TNERR
10
UC
TUPTUO
1
0.1
0 0.5 1 1.5 2
INPUT VOLTAGE : V
Fig 3. Output Current vs. Input Voltage
(OFF Characteristics)
I(off)
Data Sheet DTD743XE / DTD743XM
(V)
I
G : NIA
100
G TNERRUC CD
10
1
0.1 1 10 100 1000
OUTPUT CURRENT : IO (mA)
Fig4. DC Current Gain vs. Output Current
V
(
)
)
no
(
O
V : EGATLOV
0.1
TUP
TUO
0.01
1101001000
OUTPUT CURRENT : IO (mA)
Fig 5. Output Voltage vs. Output Current
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○
2011 ROHM Co., Ltd. All rights reserved.
2011.11 - Rev.B
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