ROHM DTD723YE, DTD723YM Technical data

R

200mA / 30V Low V

(sat) Digital transistors

CE

(with built-in resistors)

DTD723YE / DTD723YM

zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver

zFeature

1) V

CE (sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of
almost completely eliminating parasitic effects.

4) Only the on / off conditions need to be set for operation,

making the device design easy.

zStructure

NPN epitaxial plannar silicon transistor
(Resistor built-in type)

zPackaging specifications zInner circuit

EMT3 VMT3

TL

3000

T2L

8000

−

−

Part No.
DTD723YE
DTD723YM

Package
Packaging type Taping Taping

Code

Basic ordering
unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter

Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.

Symbol

V

CC

IN

V

∗1
∗2

C (max)

I

P

D

Tj

Tstg

DTD723YE DTD723YM

Limits

30

−5 to +15
200
150
150

−55 to +150

Unit

V
V

mA

mW

C
C

DTD723YE

EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>

DTD723YM

VMT3

IN

IN

1

=2.2kΩ / R2=10kΩ

1.6

0.3

(3)

(2)

(1)

0.2

R

1

R

2

GND

0.2

0.5

0.5

1.0

Abbreviated symbol : M62

1.2

0.32

(3)

(2)

(1)

0.22

0.40.4

0.8

Abbreviated symbol : M62

OUT

GND

OUT

0.7

0.55

1.6

0.8

0.15

Each lead has same dimensions

0.2

1.2

0.8

0.2

0.5

Each lead has same dimensions

0.13

0.1Min.

(1) GND
(2) IN
(3) OUT

(1) IN
(2) GND
(3) OUT

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2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.B

DTD723YE / DTD723YM

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Input voltage

Output voltage

V
V

V
Input current
Output current

I
DC current gain
Transition frequency

∗

Input resistance
Resistance ratio

∗ Characteristics of built-in transistor.

R2/R

zElectrical characteristics curves

10

Ta=－40

℃
　　　　25℃
　　　　85℃

(on) (V)

I

INPU T VOLTAGE : V

0.1

125

1

0.1 1 10 100 1000

℃

OUTPUT CURRENT : I

I(off)

I(on)

O(on)

I

I

O(off)

G

f

T

R

I

1

1

V0= 0. 3V

(mA)

O

Min.

−

2.5

−

−

−

140

−

1.54

3.6

Typ. Max. Unit Conditions

−

−

70

−

−

−

260

2.2

4.5

0.3

−

300

3.0

500

−

−

2.86

5.5

MHz

CC

= 5V, IO= 100µA

V

V

O

= 0.3V, IO= 20mA

V

mV

I

O/II

= 50mA / 2.5mA

mA

I

= 5V

V

nA

V

CC

= 30V, VI=0V

−

O

= 2V, IO= 100mA

V

CE

= 10V, IE= −5mA, f=100MHz

V

kΩ

−

−−

100

VCC= 5V

(mA)

O

10

1

OUTPUT CURRENT : I

0.1

00.511.52

INPU T VOLTAGE : V

Ta= 125

85℃
　　　　25℃

　　　－40℃

(off) (V)

I

Data Sheet

℃

1000

I

100

10

DC CURENT GAIN : G

1

0.1 1 10 100 1000
OUTPUT CURENT : I

VO= 2V

Ta= 125

85℃
　　　　25℃

　　　－40℃

(mA)

O

1

Ta= 125

(on) (V)

O

℃

0.1

OUT PUT VOLT AGE : V

0.01

℃
　　　　85℃
　　　　25℃

　　　－40℃

1 10 100 1000

OUOPUT CURRENT : I

IO/II=20

(mA)

O

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○

2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.B