ROHM DTD713ZE, DTD713ZM Technical data

R

200mA / 30V Low V

(sat) Digital transistors

CE

(with built-in resistors)

DTD713ZE / DTD713ZM

zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver

zFeature

1) V

CE (sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.

4) Only the on / off conditions need to be set for operation,

making the device design easy.

zStructure

NPN epitaxial plannar silicon transistor
(Resistor built-in type)

zPackaging specifications

EMT3 VMT3

TL

3000

T2L

8000

−

−

Part No.
DTD713ZE
DTD713ZM

Package
Packaging type Taping Taping

Code

Basic ordering
unit (pieces)

zAbsolute maximum ratings (Ta=25°C zInner circuit

Parameter

Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.

Symbol

V

CC

IN

V

∗1
∗2

C (max)

I

P

D

Tj

Tstg

DTD713ZE DTD713ZM

Limits

30

−5 to +10
200
150
150

−55 to +150

Unit

V
V

mA

mW

C
C

DTD713ZE

0.2

EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>

DTD713ZM

VMT3

R

1

IN

R

2

IN

GND

1

=1.0kΩ / R2=10kΩ

1.6

0.3

(3)

(2)

(1)

0.2

0.5

0.5

1.0

Abbreviated symbol : P21

1.2

0.32

(3)

(2)

(1)

0.22

0.40.4

0.8

Abbreviated symbol : P21

OUT

GND

OUT

0.7

0.55

1.6

0.8

0.15

Each lead has same dimensions

0.2

1.2

0.8

0.2

0.5

Each lead has same dimensions

0.13

0.1Min.

(1) GND
(2) IN
(3) OUT

(1) IN
(2) GND
(3) OUT

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2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.B

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Input voltage

Output voltage

V
V

V
Input current
Output current

I
DC current gain
Transition frequency

∗

Input resistance
Resistance ratio

∗ Characteristics of built-in transistor.

R2/R

zElectrical characteristics curves

10

Ta=－40

℃
　　　　25℃
　　　　85℃

(on) (V)

I

INPU T VOLTAGE : V

0.1

125

1

0.1 1 10 100 1000

℃

OUTPUT CURRENT : I

I(off)

I(on)

O(on)

I

I

O(off)

G

f

T

R

I

1

(mA)

O

1

Min.

−

2.5

−

−

−

140

−

0.7

8.0

V0= 0. 3V

Typ. Max. Unit Conditions

−

−

70

−

−

−

260

1.0
10

0.3

−

300

6.4

0.5

−

−

1.3
12

MHz

100

(mA)

O

10

1

OUTPUT CURRENT : I

0.1

CC

= 5V, IO= 100µA

V

V

O

= 0.3V, IO= 20mA

V

mV

I

O/II

=50mA / 2.5mA

mA

I

= 5V

V

µA

V

CC

= 30V, VI=0V

−

O

= 2V, IO= 100mA

V

CE

= 10V, IE= −5mA, f=100MHz

V

kΩ

−

−−

Ta= 125

85℃
　　　　25℃

　　　－40℃

00.511.52

INPU T VOLTAGE : V

(off) (V)

I

Data Sheet DTD713ZE / DTD713ZM

VCC= 5V

℃

1000

Ta= 125

℃

I

DC CURENT GAIN : G

85℃
　　　　25℃

　　　－40℃

100

10

1

0.1 1 10 100 1000
OUTPUT CURENT : I

(mA)

O

VO= 2V

1

Ta= 125

(on) (V)

O

0.1

OUT PUT VOLT AGE : V

0.01
1 10 100 1000

℃
　　　　85℃
　　　　25℃

　　　－40℃

OUOPUT CURRENT : I

O

IO/II=20

(mA)

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○

2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.B