ROHM DTD543ZE, DTD543ZM Technical data
Transistors
DTD543ZE / DTD543ZM
500mA / 12V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTD543ZE / DTD543ZM
zApplications
Inverter, Interface, Driver
zFeature
CE (sat) is lower than conventional product s.
1) V
2) Built-in bias resistors enable the co nfiguration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of t hin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for
operation, making the devi ce design easy.
zStructure
NPN epitaxial plannar sil icon transisto r
(Resistor built-in type)
zAbsolute maximum ratings (T a=25°C) zPackaging specifications
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Symbol
CC
V
IN
V
∗1
C (max)
I
∗2
P
D
Tj
Tstg
Limits
DTD543ZE DTD543ZM
12
−5 to +12
500
150
150
−55 to +150
Unit
V
V
mA
mW
C
C
zElectrical characteristics (T a=25°C) zEquivalent circuit
Parameter Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
∗
V
V
V
O(on)
I
O(off)
G
R
R2/R
I(off)
I(on)
I
f
T
I
I
1
1
Typ. Max. Unit Conditions
Min.
−
−
2.5
−
−
−
140
−
3.29
8.0
60
260
4.7
10
0.3
−
−
300
−
1.4
−
0.5
−
−
−
6.11
12
V
CC
= 5V, IO= 100µA
V
O
= 0.3V, IO= 20mA
V
mV
I
O/II
= 100mA / 5mA
mA
I
= 5V
V
µA
V
CC
= 12V, VI=0V
−
O
= 2V, IO= 100mA
V
MHz
V
CE
= 10V, IE=−5mA, f=100MHz
kΩ
−−
zDimensions (Unit : mm)
DTD543ZE
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
DTD543ZM
VMT3
Part No.
DTD543ZE
DTD543ZM
−
1.6
0.3
(3)
(2)
0.2
0.5
0.5
1.0
Abbreviated symbol : Y23
1.2
0.32
(3)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : Y23
Package
0.7
0.55
1.6
0.8
(1)
0.2
0.15
Each lead has same dimensions
0.2
1.2
0.8
(2)
0.13
0.2
0.5
Each lead has same dimensions
(1) GND
0.1Min.
(2) IN
(3) OUT
(1) IN
(2) GND
(3) OUT
EMT3 VMT3
Packaging type Taping Taping
Code
Basic ordering
unit (pieces)
TL
3000
−
R
1
IN
R
2
IN
GND
R1=4.7kΩ / R2=47kΩ
T2L
8000
−
OUT
GND
OUT
Rev.A 1/2
Transistors
zElectrical characteristic curves
400
Ta=25
350
(mA)
300
O
250
200
150
100
OUTPUT CURRENT : I
50
0
Fig.1 Output Current vs. Output Voltage
℃
0 0.1 0.2 0.3 0.4 0.5
OUTPUT VO L T AGE : VO (V)
Ii=1.8mA
Ii=2.0mA
Ii=1.6mA
Ii=1.4mA
Ii=1.2mA
Ii=1.0mA
Ii=0.8mA
Ii=0.6mA
Ii=0.4mA
Ii=0.2mA
Ii=0mA
10
(V)
INPUT VOLTAGE : V
Ta=－40
I
25℃
85℃
125
1
0.1
0.01 1 100
OUTPUT CURRENT : I
V0=0.3V
℃
℃
Fig.2 Input Voltage vs. Output Current
DTD543ZE / DTD543ZM
100
VCC=5V
(mA)
O
10
1
OUTPUT CURRENT : I
0.1
(mA)
O
00.511.52
INPUT VOLTAGE : V
Fig.3 Output Current vs. Input Voltage
Ta=125
℃
85℃
25℃
－40℃
(off) (V)
I
1000
I
100
VO=5V
Ta=125
℃
85℃
10
25℃
－40℃
(on) (V)
O
1
0.1
0.01
Ta=125
℃
85℃
25℃
－40℃
IO/II = 20/1
DC CURENT GAIN : G
OUTPUT VOLTAGE : V
1
0.01 0.1 1 10 100 1000
OUTPUT CURENT : IO (mA)
0.001
1 10 100 1000
OUTPUT CURRENT : I
Fig.4 DC Current Gain vs. Output Current Fig.5 Output Voltage vs. Output Current
(mA)
O
Rev.A 2/2
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