ROHM DTD543XE, DTD543XM Technical data

Transistors

DTD543XE / DTD543XM

500mA / 12V Low V

CE

(sat) Digital transistors

(with built-in resistors)

DTD543XE / DTD543XM

zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver

zFeature

CE (sat) is lower than conventional product s.

1) V

2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input resisto rs
(see equivalent circuit).

3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely
eliminating parasitic effects.

4) Only the on / off conditions need to be set for operation,
making the device design ea sy.

zStructure

NPN epitaxial planar si licon transistor
(Resistor built-in type)

zAbsolute maximum ratings (Ta=25°C) zPackaging specifications

Parameter

Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.

Symbol

CC

V

IN

V

∗1

C (max)

I

P

D

∗2

Tj

Tstg

Limits

DTD543XE DTD543XM

12

−7 to +12
500
150
150

−55 to +150

Unit

mA

mW

zElectrical characteristics (T a=25°C) zEquivalent circuit

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗ Characteristics of built-in transistor.

V

I(off)

V

I(on)

V

O(on)

I

I

I

O(off)

G

I

∗

R

R2/R

f

T

1

1

Typ. Max. Unit Conditions

Min.

−

2.5

−

−

−

140

−

3.29

1.7

60

260

4.7

2.1

−

0.3

−

−

300

−

1.4

−

500

−

−

−

6.11

2.6

V

CC

= 5V, IO= 100µA

V

O

= 0.3V, IO= 2mA

V

mV

I

O/II

= 100mA / 5mA

mA

I

= 5V

V

µA

V

CC

= 12V, VI=0V

−

O

= 2V, IO= 100mA

V

MHz

V

CE

= 10V, IE=−5mA, f=100MHz

kΩ

−−

DTD543XE

EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>

DTD543XM

VMT3

V
V

C
C

1.6

0.3

(3)

(2)

(1)

0.2

0.5

0.5

1.0

Addreviated symbol : X43

1.2

0.32

(3)

(2)

(1)

0.22

0.40.4

0.8

Addreviated symbol : X43

Package
Packaging type Taping Taping

Code

Basic ordering

Part No.
DTD543XE
DTD543XM

−

unit (pieces)

0.7

0.55

1.6

0.8

0.2

0.15

0.1Min.

Each lead has same dimensions

0.2

1.2

0.8

0.13

0.2

0.5

Each lead has same dimensions

R

1

IN

R

2

IN

R1=4.7kΩ / R2=10kΩ

(1) GND
(2) IN
(3) OUT

(1) IN
(2) GND
(3) OUT

EMT3 VMT3

TL

3000

−

GND

T2L

8000

−

OUT

GND

OUT

Rev.B 1/2

Transistors

zElectrical characteristic curves

DTD543XE / DTD543XM

200

Ta=25

180
160

(mA)

O

140
120
100

80
60
40

OUTPUT CURRENT : I

20

0

℃

0 0.1 0.2 0.3 0.4 0.5

OUTPUT VOLTAGE : V

O

(V)

Fig.1 Output Current vs. Output Voltage

1000

Ta=125

I

100

10

DC CURENT GAIN : G

1

0.01 0.1 1 10 100 1000

℃
　　　　85℃
　　　　25℃

　　　－40℃

OUTPUT CURE NT : I

(mA)

O

VO=5V

Ii=1.0mA
Ii=0.9mA
Ii=0.8mA

Ii=0.7m
Ii=0.6m

Ii=0.5m
Ii=0.4m
Ii=0.3m
Ii=0.2m

Ii=0.1m
Ii=0mA

100

Ta=－40

(V)

I

10

1

INPUT VOLTAGE : V

0.1

0.01 1 100

℃
　　　　25℃
　　　　85℃

125

℃

OUTPUT CURRENT : I

V0=0.3V

Fig.2 Input Voltage vs. Output Current

1

(on) (V)

Ta=125

O

0.1

OUTPUT VOLTAGE : V

0.01
1 10 100 1000

℃
　　　　85℃
　　　　25℃
　　　－40℃

OUTPUT CURRENT : I

(mA)

O

O

(mA)

100

VCC=5V

(mA)

10

O

1

0.1

OUTPUT CURRENT : I

0.01

00.511.52
INPUT VOLTAGE : V

Ta=125

85℃
　　　　25℃

　　　　85℃

　　　－40℃

　　　　25℃

　　　－40℃

Fig.3 Output Current vs. Input Voltage

Ta=125

(off) (V)

I

℃

℃

Fig.4 DC Current Gain vs. Output Current Fig.5 Output Voltage vs. Output Current

Rev.B 2/2