ROHM DTD523YE, DTD523YM Technical data

R

500mA / 12V Low V

(sat) Digital transistors

CE

(with built-in resistors)

DTD523YE / DTD523YM

zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver

zFeature

1) V

CE (sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.

4) Only the on / off conditions need to be set for operation,

making the device design easy.

zStructure

NPN epitaxial plannar silicon transistor
(Resistor built-in type)

zPackaging specifications

EMT3 VMT3

TL

3000

T2L

8000

−

−

Part No.
DTD523YE
DTD523YM

Package
Packaging type Taping Taping

Code

Basic ordering
unit (pieces)

zAbsolute maximum ratings (Ta=25°C zInner circuit

Parameter

Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature

∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.

Symbol

V

CC

IN

V

∗1
∗2

C (max)

I

P

D

Tj

Tstg

DTD523YE DTD523YM

Limits

12

−5 to +12
500
150
150

−55 to +150

Unit

V
V

mA

mW

C
C

DTD523YE

0.2

EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>

DTD523YM

VMT3

R

1

IN

R

2

IN

GND

1

=2.2kΩ / R2=10kΩ

1.6

0.3

(3)

(2)

(1)

0.2

0.5

0.5

1.0

Abbreviated symbol : X62

1.2

0.32

(3)

(2)

(1)

0.22

0.40.4

0.8

Abbreviated symbol : X62

OUT

GND

OUT

0.7

0.55

1.6

0.8

0.15

Each lead has same dimensions

0.2

1.2

0.8

0.2

0.5

Each lead has same dimensions

0.13

0.1Min.

(1) GND
(2) IN
(3) OUT

(1) IN
(2) GND
(3) OUT

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2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.B

DTD523YE / DTD523YM

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Input voltage

Output voltage

V
V

V
Input current
Output current

I
DC current gain
Transition frequency

∗

Input resistance
Resistance ratio

∗ Characteristics of built-in transistor.

R2/R

zElectrical characteristics curves

100

Ta=－40

℃

　　　　25℃

(on) (V)

I

10

　　　　85℃

125

℃

I(off)

I(on)

O(on)

I

I

O(off)

G

f

T

R

Min.

−

2.5

−

−

−

140

I

−

1.54

1

3.6

1

Typ. Max. Unit Conditions

−

−

60

−

−

−

260

2.2

4.5

0.3

−

300

3.0

500

−

−

2.86

5.5

(mA)

O

MHz

100

10

CC

= 5V, IO= 100µA

V

V

O

= 0.3V, IO= 20mA

V

mV

I

O/II

=100mA / 5mA

mA

I

= 5V

V

nA

V

CC

= 12V, VI=0V

−

O

= 2V, IO= 100mA

V

CE

= 10V, IE= −5mA, f=100MHz

V

kΩ

−

−−

VCC= 5V

Data Sheet

1

INPU T VOLTAGE : V

0.1

0.1 1 10 100 1000

OUTPUT CURRENT : I

1000

Ta= 125

℃

I

DC CURENT GAIN : G

85℃
　　　　25℃

　　　－40℃

100

10

1

0.1 1 10 100 1000
OUTPUT CURENT : I

(mA)

O

O

(mA)

V0=0.3V

VO= 2V

1

OUTPUT CURRENT : I

0.1

00.511.52

INPU T VOLTAGE : V

1

(on) (V)

O

Ta= 125

℃

　　　　85℃

0.1

　　　　25℃

　　　－40℃

OUT PUT VOLT AGE : V

0.01
1 10 100 1000

OUOPUT CURRENT : I

Ta= 125

85℃
　　　　25℃

　　　－40℃

(off) (V)

I

IO/II=20

(mA)

O

℃

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○

2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.B