ROHM DTD513ZE, DTD513ZM Technical data
R
500mA / 12V Low V
(sat) Digital transistors
CE
(with built-in resistors)
DTD513ZE / DTD513ZM
zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver
zFeature
1) V
CE (sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of
almost completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for operation,
making the device design easy.
zStructure
NPN epitaxial plannar silicon transistor
(Resistor built-in type)
zPackaging specifications
EMT3 VMT3
TL
3000
T2L
8000
−
−
Part No.
DTD513ZE
DTD513ZM
Package
Packaging type Taping Taping
Code
Basic ordering
unit (pieces)
zAbsolute maximum ratings (Ta=25°C) zInner circuit
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Symbol
V
CC
IN
V
∗1
∗2
C (max)
I
P
D
Tj
Tstg
DTD513ZE DTD513ZM
Limits
12
−5 to +10
500
150
150
−55 to +150
Unit
V
V
mA
mW
C
C
DTD513ZE
0.2
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
DTD513ZM
VMT3
R
1
IN
R
2
IN
GND
1
=1.0kΩ / R2=10kΩ
1.6
0.3
(3)
(2)
(1)
0.2
0.5
0.5
1.0
Abbreviated symbol : Y21
1.2
0.32
(3)
(2)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : Y21
OUT
GND
OUT
0.7
0.55
1.6
0.8
0.15
Each lead has same dimensions
0.2
1.2
0.8
0.2
0.5
Each lead has same dimensions
0.13
0.1Min.
(1) GND
(2) IN
(3) OUT
(1) IN
(2) GND
(3) OUT
www.rohm.com
1/2
c
○
2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.B
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Input voltage
Output voltage
V
V
V
Input current
Output current
I
DC current gain
Transition frequency
∗
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
R2/R
zElectrical characteristics (Ta=25°C)
10
Ta=－40°C
25°C
85°C
(on) (V)
I
INPU T VOLTAGE : V
125°C
1
0.1
0.1 1 10 100 1000
OUTPUT CURRENT : I
I(off)
I(on)
O(on)
I
I
O(off)
G
f
T
R
I
1
(mA)
O
1
V0=0.3V
Min.
−
2.5
−
−
−
140
−
0.7
8.0
Typ. Max. Unit Conditions
−
−
60
−
−
−
260
1.0
10
0.3
−
300
6.4
0.5
−
−
1.3
12
MHz
100
(mA)
O
10
1
OUTPUT CURRENT : I
0.1
CC
= 5V, IO= 100µA
V
V
O
= 0.3V, IO= 20mA
V
mV
I
O/II
=100mA / 5mA
mA
I
= 5V
V
µA
V
CC
= 12V, VI=0V
−
O
= 2V, IO= 100mA
V
CE
= 10V, IE= −5mA, f=100MHz
V
kΩ
−
−−
VCC= 5V
Ta= 125°C
－
00.511.52
INPU T VOLTAGE : V
(off) (V)
I
Data Sheet DTD513ZE / DTD513ZM
85°C
25°C
40°C
1000
I
DC CURENT GAIN : G
Ta= 125°C
85°C
25°C
40°C
－
100
10
1
0.1 1 10 100 1000
OUTPUT CURENT : I
O
(mA)
VO= 2V
1
(on) (V)
O
Ta= 125°C
85°C
0.1
OUT PUT VOLT AGE : V
0.01
25°C
40°C
－
1 10 100 1000
OUOPUT CURRENT : I
IO/II=20
(mA)
O
www.rohm.com
2/2
c
○
2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.B
Loading...