ROHM DTD143EC, DTD143EK, DTD143ES Schematic [ru]
DTD143EK / DTD143EC / DTD143ES
Transistors
500mA / 50V Digital transistors (with built-in resistors)
DTD143EK / DTD143EC / DTD143ES
zApplic ations
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin film resistors with
complete isolation to allow negative biasing
of the input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for
operation, making the device design easy .
zStructure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
zPackaging specifications
SPT
TP
5000
−
−
Part No.
DTD143EK
DTD143EC
DTD143ES
Package
Packaging type
Code
Basic ordering unit (pieces)
SMT3 SST3
Taping Taping Taping
T146
3000
T116
3000
−
−
zAbsolute maximum ratings (Ta=25°C) zEquivalent circuit
Parameter Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
DTD143EK DTD143EC DTD143ES
V
CC
IN
V
C
I
PD
Tj
Tstg
Limits
50
−10 to +30
500
200 300
150
−55 to +150
Rev.B 1/2
zExternal dimensions (Unit : mm)
DTD143EK
ROHM : SMT3
EIAJ : SC-59
DTD143EC
ROHM : SST3
DTD143ES
−
ROHM : SPT
EIAJ : SC-72
−
Unit
V
V
mA
mW
°C
°C
R1=R2=4.7kΩ
2.9
0.4
(3)
1.6
2.8
(2)
(1)
0.95 0.95
1.9
Each lead has same dimensions
Abbreviated symbol : F23
2.9
0.4
(3)
2.4
1.3
(2)
(1)
0.95
0.95
1.9
Each lead has same dimensions
Abbreviated symbol : R23
4.0 2.0
3.0
3Min.
0.45
(15Min.)
2.5
5.0
(1) (2) (3)
Abbreviated symbol : D143ES
R
1
IN
R
IN
0.5
2
GND
0.15
0.15
1.1
0.95
0.8
0.45
0.45
OUT
GND
OUT
0.3Min.
0.2Min.
(1) GND
(2) IN
(3) OUT
(1) GND
(2) IN
(3) OUT
(1) GND
(2) OUT
(3) IN
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol
I (off)
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
∗
V
V
I (on)
V
O (on)
I
I
O (off)
G
R
R2 / R
f
T
I
I
1
1
∗
zElectrical characteristic curves
100
50
20
(V)
10
I (on)
500m
INPUT VOLTAGE : V
200m
100m
Ta= −40˚C
5
2
1
500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
25˚C
100˚C
OUTPUT CURRENT : I
O
(A)
VO=0.3V
Fig.1 Input voltage vs. output current
(ON characteristics)
1
500m
(V)
200m
O (on)
100m
OUTPUT VOLTAGE : V
Ta=100˚C
25˚C
50m
20m
10m
5m
2m
1m
500µ 1m 2m 5m 10m 20m 50m 500m100m200m
−40˚C
OUTPUT CURRENT : I
O
(A)
lO / lI=20
Fig.4 Output voltage vs. output current
DTD143EK / DTD143EC / DTD143ES
Min.
Typ. Max. Unit Conditions
0.5
−
−
−
−
3
0.3
0.1
−
1.8
−
−
0.5
−
−
−
47
3.29
0.8
(A)
OUTPUT CURRENT : Io
−
6.11
4.7
1.2
1
−
10m
500µ
200µ
100µ
5m
2m
1m
50µ
20µ
10µ
5µ
2µ
1µ
200
Ta=100˚C
−
25˚C
−40˚C
0.5 1.0 1.5 2.0 2.5 3.0 0
INPUT VOLTAGE : V
MHz
Fig.2 Output current vs. input voltage
(OFF characteristics)
V
CC
V
V
mA
µA
−
kΩ
=5V, IO=100µA
O
=0.3V, IO=20mA
V
I
O
/ II=50mA / 2.5mA
V
I
=5V
CC
=50V, VI=0V
V
O
=5V, IO=50mA
V
−
−−
V
CE
=10V, IE= −50mA, f=100MHz
1k
500
I
200
100
50
20
10
5
DC CURRENT GAIN : G
2
1
1m 2m 5m 10m 100m50m20m 200m 500m500µ
Ta=100˚C
25˚C
−40˚C
OUTPUT CURRENT : I
I (off)
VCC=5V
(V)
Fig.3 DC current gain vs. output current
VO=5V
O
(A)
Rev.B 2/2
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