ROHM DTD123TK Technical data
Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
DTD123TK
NPN 500mA 40V Digital Transistors (Bias Resistor Built-in Transistors)
l
Outline
l
Features
l
Inner circuit
1) Built-In Biasing Resistors
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTB123TK
6) Lead Free/RoHS Compliant.
l
Application
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
l
Packaging specifications
Basic
ordering
unit (pcs)
Marking
DTD123TK
SMT3
2928
T146
180
8
3,000
F02
Part No.
Package
Package
size
(mm)
Taping
code
Reel size
(mm)
Tape width
(mm)
I
C
500mA
R
2.2kW
Parameter
Value
SMT3
V
CEO
40V
DTD123TK
SOT-346 (SC-59)
Collector
Base
Emitter
1/4
2012.07 - Rev.C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
DTD123TK
lAbsolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
-
200
-
MHz
DC current gain
h
FE
VCE= 5V , IC= 50mA
2.86
kW
Transition frequency
fT
*1
V
CE
= 10V, IE = -50mA,
f = 100MHz
Emitter cut-off current
I
EBO
-
1.54
2.2
V
EB
= 4V
Collector-emitter saturation voltage
V
CE(sat)
IC / IB= 50mA / 2.5mA
Emitter-base resistance
R
IC= 1mA
Emitter-base breakdown voltage
BV
EBO
IE= 50mA
Collector cut-off current
I
CBO
V
CB
= 50V
Collector-emitter breakdown voltage
BV
CEO
V
100
250
600
-
--0.3mA--0.5mA--0.5V5--V40--
Unit
Collector-base breakdown voltage
BV
CBO
IC= 50mA
V
Min.
Typ.50--Max.
Parameter
Symbol
Conditions
T
j
150
°C
T
stg
-55 to +150
°C
I
C
500
mA
P
d
*2
200
mW
V
CEO
40
V
V
EBO
5
V
Parameter
Symbol
Values
Unit
V
CBO
50
V
2/4
2012.07 - Rev.C
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