ROHM DTD123EK Technical data
500mA / 50V Digital transistors
(with built-in resistors)
DTD123EK
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have
the advantage of almost completely eliminating parasitic
effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications Inner circuit
Part No.
DTD123EK
Package
Packaging type
Code
Basic ordering unit (pieces)
SMT3
Taping
T146
3000
Absolute maximum ratings (Ta=25C)
Parameter Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
V
CC
V
C
I
Pd
Tj
Tstg
IN
Limits
DTD123EK
50
−10 to +12
500
200
150
−55 to +150
Unit
V
V
mA
mW
C
C
DTD123EK
ROHM : SMT3
EIAJ : SC-59
R
1
IN
R
2
IN
R1=R2=2.2kΩ
2.9
0.4
(3)
(2)
0.95 0.95
GND
(1)
1.9
Abbreviated symbol: F22
OUT
GND
OUT
1.1
0.8
1.6
2.8
0.15
Each lead has same dimension
0.3Min.
(1) GND
(2) IN
(3) OUT
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
Electrical characteristics (Ta=25C)
Parameter Symbol
I(off)
O
(A)
O
(A)
V
V
V
I
R2/R
VO=0.3V
lO/lI=20
I(on)
O(on)
I
O(off)
G
R
f
T
I
I
1
1
∗
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor.
∗
Electrical characteristic curves
100
50
20
(V)
I(on)
10
Ta= −40 C
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
500 μ 1m 2m 5m 10m 20m 50m100m 200m 500m
25 C
100 C
OUTPUT CURRENT : I
Fig.1 Input voltage vs. output current
(ON characteristics)
1
500m
(V)
200m
O(on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
500μ 1m 2m 5m 10m 20m 50m 500m100m 200m
Ta=100 C
25 C
−40 C
OUTPUT CURRENT : I
Fig.4 Output voltage vs. output current
Typ. Max. Unit Conditions
Min.
CC
=
−
3
−
−
−
39
1.54
0.8
−
−
0.5
−
−
0.1
0.3
−
3.8
−
0.5
−
−
2.2
2.86
1
1.2
200
−
10m
5m
Ta=100 C
25 C
2m
−40 C
(A)
1m
500μ
200μ
100μ
50μ
20μ
10μ
OUTPUT CURRENT : Io
5μ
2μ
1μ
0.5 1.0 1.5 2.0 2.5 3.0 0
INPUT VOLTAGE : V
V
V
mA
μA
−
kΩ
−−
MHz
5V, I
V
O
=
0.3V, I
V
O/II
=
50mA/2.5mA
I
I
=
5V
V
CC
=
50V, V
V
O
=
5V, I
V
CE
=
10V, I
V
I(off)
Fig.2 Output current vs. input voltage
(OFF characteristics)
O
=
100μA
O
=
20mA
I
=
0V
O
=
50mA
E
=
−50mA, f=100MHz
VCC=5V
(V)
Data Sheet DTD123EK
−
1k
500
I
200
100
50
20
10
5
DC CURRENT GAIN : G
2
1
Ta=100 C
1m 2m 5m 10m 20m 50m 500m100m 200m 500μ
OUTPUT CURRENT : I
Fig.3 DC current gain
vs. output current
25 C
−40 C
O
(A)
VO=5V
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○
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
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