ROHM DTD114EK Technical data
500mA / 50V Digital transistors
(with built-in resistors)
DTD114EK
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
DTD114EK
Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating
parasitic effects.
3) Only the on / off conditions need to be set for operation,
ROHM : SMT3
EIAJ : SC-59
making the device design easy.
Structure Inner circuit
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
Package
Packaging type Taping
Code
Basic ordering
Part No.
DTD114EK
unit (pieces)
SMT3
T146
3000
R
IN
R
1
R
IN
1
=10kΩ R2=10kΩ
2
Absolute maximum ratings (Ta=25C)
Parameter Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
V
CC
V
C
I
P
Tj
Tstg
IN
D
Limits
DTD114EK
50
−10 to +40
500
200
150
−55 to +150
Unit
V
V
mA
mW
C
C
2.9
0.4
(3)
(2)
0.95 0.95
Addreviated symbol : F24
GND
(1)
1.9
OUT
GND
OUT
1.1
0.8
1.6
2.8
0.15
Each lead has same dimensions
(1) GND
0.3Min.
(2) IN
(3) OUT
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.B
Electrical characteristics (Ta=25C)
Parameter Symbol
Input voltage
Output voltage
V
V
V
Input current
Output current
DC current gain
Input resistance
Resistance ratio
R2/R
Transition frequency
Characteristics of built-in transistor
∗
Electrical characteristics curves
I
O(off)
I(off)
I(on)
O(on)
I
G
R
f
T
Min.
−
3
−
I
−
−
56
I
7
1
0.8
1
−
∗
Data Sheet DTD114EK
Typ. Max. Unit Conditions
−
0.5
−
−
0.1
0.3
−
0.88
−
0.5
−
−
10
13
1
1.2
200
MHz
−
CC
= 5V, IO= 100μA
V
V
O
= 0.3V, IO= 10mA
V
V
I
O/II
= 50mA/2.5mA
mA
I
= 5V
V
V
CC
μA
−
kΩ
= 50V, VI=0V
O
= 5V, IO= 50mA
V
−
−−
V
CE
=10V, IE= −50mA, f=100MHz
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.B
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