ROHM DTD113ZK, DTD113ZS, DTD113ZU Schematic [ru]

DTD113ZK / DTD113ZU / DTD113ZS

Transistors

500mA / 50V Digital transistors (with built-in resistors)

DTD1 13ZK / DTD113ZU / DTD113ZS

zApplica tions
Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable theconfiguration of an
inverter circuit

without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors negative
biasing of the input. They als o have the advantage of
almost completely eliminat

ing parasitic effects.

3) Only the on/off conditions need to be set for operation,
making the device design easy .

zStructure

NPN epitaxial planar silicon transistor
(Resistor built-in type)

zPackaging specifications

SMT3 SPT

UMT3

Taping Taping Taping

T146
3000

−

T106
3000

−

TP

5000

−

−

Part No.
DTD113ZK
DTD113ZU

Package
Packaging type
Code
Basic ordering unit (pieces)

DTD113ZS −−

zEquivalent circuit

zExternal dimensions (Unit : mm)

DTD113ZK

ROHM : SMT3
EIAJ : SC-59

DTD113ZU

ROHM : UMT3
EIAJ : SC-70

DTD113ZS

ROHM : SPT
EIAJ : SC-72

2.9

(3)

(2)

0.95 0.95

1.9

Each lead has same dimensions

Abbreviated symbol: G21

2.0

(3)

(2)

0.65

0.65

1.3

Each lead has same dimensions

Abbreviated symbol: G21

3.0

(15Min.)

(1) (2) (3)

Abbreviated symbol : D113ZS

0.4

1.6

2.8

(1)

0.2

0.3

2.1

1.25

(1)

4.0 2.0

3Min.

0.45

2.5

5.0

0.5

0.15

0.15

1.1

0.8

0.3Min.

(1) GND
(2) IN
(3) OUT

0.9

0.7

0.1Min.

(1) GND
(2) IN
(3) OUT

0.45

(1) GND
(2) OUT
(3) IN

R

1

IN

R

2

IN

R1=1.0kΩ, R2=10kΩ

OUT

GND

OUT

GND

Rev.B 1/3

Transistors

zAbsolute maximum ratings (Ta=25°C)

DTD113ZK / DTD113ZU / DTD113ZS

Parameter

Supply voltage
Input voltage

Output current
Power dissipation
Junction temperature
Storage temperature

Symbol

V

CC

V

IN

I

C

P

D

Tj

Tstg

DTD113ZU DTD113ZK DTD113Z

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Input voltage
Output voltage

Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency

Characteristics of built-in transistor

∗

V
V

V

O(on)

I

O(off)

G
R

R2/R

I(off)

I(on)

I

f

Min.

1.5

I

I

1

0.7

1

T

∗

Limits

S

50

−5 to +10
500

200 300

150

−55 to +150

Typ. Max. Unit Conditions

0.3

−

−

−

−

0.1

10

200

0.3

7.2

−

0.5

−

−

−

1

1.3
12

−

−

−

−

82

8

−

CC

=5V, IO=100µA

V

V

V

O

=0.3V, IO=20mA

I

O/II

V

mA

µA

−

kΩ

−−

MHz

=50mA/2.5mA

I

=5V

V
V

CC

=50V, VI=0V

V

O

=5V, IO=50mA

V

CE

=10V, IE=−50mA, f=100MHz

Unit

V
V

mA

mW

°C
°C

−

Rev.B 2/3