ROHM DTC643TU Technical data
DTC643TU / DTC643TK
Transistors
Digital transistors (built-in resistor)
DTC643TU / DTC643TK
!!!!Features
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically
V
CE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
2) These transistors can be used at high current levels,
I
C=600mA.
!!!!Structure
NPN digital transistor
(Built-in resistor type)
!!!!Equivalent circuit
B
R=4.7kΩ
B : Base
C : Collector
E : Emitter
R
C
E
!!!!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
C
Tj 150
Tstg
Limits
20
20
12
600
200P
−55 to +150
!!!!External dimensions (Unit : mm)
2.0±0.2
1.3±0.1
0.65
0.65
(1)
(2)
±0.1
2.1±0.1
(3)
2.9±0.2
1.9±0.2
1.25
+0.1
0.3
−0
Abbreviated symbol : R03
0.950.95
(2)(1)
+0.2
−0.1
2.8±0.2
1.6
(3)
+0.1
0.4
−0.05
Abbreviated symbol : R03
0.2
0.15
Each lead has same dimensions
0.15
Each lead has same dimensions
Unit
V
V
V
mA
mW
°C
°C
UMT3
<SC-70>
(1) Emitter
(2) Base
(3) Collector
SMT3
<SC-59>
(1) Emitter
(2) Base
(3) Collector
0.9±0.1
0.7
±0.05
1.1
0.8±0.1
+0.1
−0.06
±0.1
+0.2
−0.1
0−0.1
0.1Min.
0.3Min.
1/2
DTC643TU / DTC643TK
Transistors
!!!!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Output "ON" resistance
∗Transition frequency of the device.
!!!!Packaging specifications and hFE
Package
Type
Packaging type
Code
Basic ordering unit (pieces)
DTC643TU
DTC643TK
!!!!Electrical characteristic curves
10000
VCE=5V
FE
1000
DC CURRENT GAIN : h
100
0.1 1 10 100 1000
100°C
25°C
−40°C
COLLECTOR CURRENT : I
C
Fig.1 DC Current Gain vs.
Collector Current
!!!!Ron measurement circuit
RL=1kΩ
R
BV
BV
BV
I
I
V
CE (sat)
R
UMT3
Taping Taping
T106
3000
−
(mA)
v
0
on
= ×R
vi−v
L
0
20 −−VIC=50µA
CBO
20 −−V
CEO
12 −−V
EBO
−−0.5 µA
CBO
−−0.5 µA
EBO
− 40 150 mV
820 − 2700 −
FE
3.29 4.7 6.11 kΩ
1
f
− 150 − MHz
T
− 0.55 − Ω
on
SMT3
T146
3000
−
10000
IC / IB=20 / 1
1000
(mV)
CE (sat)
100
100°C
10
COLLECTOR SATURATION
−40°C
VOLTAGE : V
1
0.1 1 10 100 1000
COLLECTOR CURRENT : I
Fig.2 Collector-Emitter Saturation
Voltage vs. Collector Current
I
=1mA
C
I
=50µA
E
V
=20V
CB
=12V
V
EB
/ IB=50mA / 2.5mA
I
C
=5V, IC=50mAh
V
CE
−R
=10V, IE= −50mA, f=100MHz
V
CE
VI=5V, R
25°C
(mA)
C
=1kΩ, f=1MHz
L
1000
100
(Ω)
on
10
1
ON RESISTANCE : R
0.1
Fig.3
∗
Ta=25°C
f=1kHz
=1kΩ
R
L
hFE=1500 (5V / 50mA)
0.1 1 10 100
INPUT VOLTAGE : V
"ON" resistance vs. Input Voltage
(V)
I
Input
v
i
100mV
(rms)
f=1kHz
Fig.4 Output "ON" resistance (Ron)
measurement circuit
Output
V
v
0
v
I
2/2
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