ROHM DTC144TUA Technical data
100mA / 50V Digital transistors
(with built-in resistor)
DTC144TM / DTC144TE / DTC144TUA / DTC144TKA
Applications
Inverter, Interface, Driver
Features
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for operation, making the device design easy.
Structure
NPN epitaxial planar silicon transistor (Resistor built-in type)
Dimensions (Unit : mm)
DTC144TM
ROHM : VMT3
1.2
0.32
0.2
(3)
1.2
0.8
(2)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : 06 Abbreviated symbol : 06
0.13
0.2
0.5
(1) Base
(2) Emitter
(3) Collector
DTC144TE
ROHM : EMT3
1.6
0.3
(3)
(2)
0.2
(1)
0.2
0.5
0.5
1.0
0.7
0.55
1.6
0.8
0.15
0.1Min.
(1) Emitter
(2) Base
(3) Colector
DTC144TUA
ROHM : UMT3
EIAJ : SC-70
Inner circuit
B
B : Base
C : Collector
E : Emitter
R1=47kΩ
R
1
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 06 Abbreviated symbol : 06
1.25
0.9
0.7
0.2
2.1
0.15
Each lead has same dimensions
0.1Min.
(1) Emitter
(2) Base
(3) Colector
DTC144TKA
ROHM : SMT3
EIAJ : SC-59
2.9
(3)
(2)
0.95 0.95
1.9
0.4
1.6
2.8
(1)
0.15
C
E
1.1
0.8
(1) Emitter
(2) Base
(3) Colector
0.3Min.
Each lead has same dimensions
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c
2009 ROHM Co., Ltd. All rights reserved.
○
2009.06 - Rev.B
Packaging specifications
Package
VMT3
Packaging type TapingTaping Taping Taping
Part No.
Code
Basic ordering
unit (pieces)
T2L
8000
3000
DTC144TM
DTC144TE
DTC144TUA
DTC144TKA
−−
−
−
Absolute maximum ratings (T a=25C)
Parameter Symbol
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CBO
V
CEO
V
EBO
I
Pc
Tj
Tstg
C
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Characteristics of built-in transistor
∗
Symbol
CBO
BV
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
Electrical characteristic curves
1k
500
FE
200
100
50
20
10
DC CURRENT GAIN : h
Ta=100°C
25°C
−40°C
5
2
1
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I
Fig.1 DC current gain vs. collector
current
VCE=5V
C
(A)
UMT3EMT3 SMT3
TL
T106
3000
−
T146
3000
−
−
−
−
−
−
−
Limits
DTC144TEDTC144TM
DTC144TUA DTC144TKA
50
50
5
100
150 200
150
−55 to +150
Typ.
Min.
50
50
5
−
−
−
100
32.9
∗
−
1
(V)
500m
CE(sat)
200m
100m
50m
20m
10m
5m
2m
1m
COLLECTOR SATURATION VOLTAGE : V
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
Max. Unit Conditions
−
−
−
0.5
0.5
0.3
600
61.1
−
V
V
V
μA
μA
V
−
kΩ
MHz
−
−
−
−
−
−
250
47
250
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : I
Fig.2 Collector-emitter saturation
voltage vs. collector current
I
C
=
C
=
I
E
=
I
CB
V
EB
V
I
C/IB
CE
V
VCE
lC/lB=10
C
(A)
Unit
mA
mW
°C
°C
50μA
1mA
50μA
=
=
=
=
=10V, I
V
V
50V
4V
5mA/0.5mA
5V, I
C
=
1mA
E
=
−
Data Sheet DTC144TM / DTC144TE / DTC144TUA / DTC144TKA
−
5mA, f=100MHz
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c
2009 ROHM Co., Ltd. All rights reserved.
○
2009.06 - Rev.B
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