ROHM DTC144EUB Schematic [ru]
Transistors DTC144EUB
100mA / 50V Digit al transistors (with built-in resistors)
DTC144EUB
zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making the device design easy.
zStructure zEquivalent circuit
NPN silicon epitaxial planar transistor type
(Resistor built-in)
zPackaging specifications
UMT3F
TL
3000
Part No.
DTC144EUB
Package
Packaging type Taping
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
LimitsParameter Symbol
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land
V
V
Ic(max)
P
Tstg
CC
IN
∗1
Io
∗2
D
Tj
50
−10 to +40
100 mA
30
200
150
−55 to +150
UMT3F
(1) IN
(2) GND
(3) OUT
Unit
V
V
mA
mW
°C
°C
2.1
R
IN
1
R
IN
R1=R2=47kΩ
2.0
0.32
(3)
0.4250.425
1.25
(1) (2)
0.65 0.65
1.3
Abbreviated symbol : 26
2
GND
0.9
0.530.53
0.13
Each lead has same dimensions
OUT
GND
OUT
1/2
Transistors DTC144EUB
zElectrical characteristics (T a=25°C)
Parameter Symbol
I(off)
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Characteristics of built-in transistor
∗
V
V
V
O(on)
I
O(off)
G
R
R2/R
I(on)
I
f
T
I
I
∗
1
1
zElectrical characteristic curves
100
50
20
(V)
I(on)
10
Ta= −40°C
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
25°C
100°C
OUTPUT CURRENT : I
Fig.1 Input voltage vs. output current
(ON characteristics)
O
(A)
VO=0.3V
1
500m
Ta=100°C
(V)
200m
O(on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
25°C
−40°C
OUTPUT CURRENT : I
Fig.4 Output voltage vs. output
current
lO/lI=20
O
(A)
Typ. Max. Unit Conditions
Min.
−
−
3.0
−
100
−
−
−
−
−
68
−
250
−
47
32.9
1.0
0.8
10m
5m
Ta=100°C
2m
(A)
1m
500µ
200µ
100µ
50µ
20µ
10µ
OUTPUT CURRENT : Io
5µ
2µ
1µ
0.5
−
300
180
500
−
−
61.1
1.2
VCC=5V
25°C
−40°C
0.5 1.0 1.5 2.0 2.5 3.00
INPUT VOLTAGE : V
V
CC
V
mV
µA
nA
−
MHz
=5V, IO=100µA
V
O
=0.3V, IO=2mA
I
O
=10mA, II=0.5mA
V
I
=5V
V
CC
=50V, VI=0V
V
O
=5V, IO=5mA
CE
=10V, IE= −5mA, f=100MHz
V
kΩ
−−
I(off)
Fig.2 Output current vs. input voltage
(OFF characteristics)
(V)
−
1k
500
Ta=100°C
I
200
100
50
20
10
DC CURRENT GAIN : G
25°C
−40°C
5
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : I
Fig.3 DC current gain vs. output
current
VO=5V
O
(A)
2/2
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