ROHM DTC144EEB Schematic [ru]

Transistors ! DTC144EEB

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100mA / 50V Digital transistors
(with built-in resistors)

DTC144EEB

Applications

Inverter, Interface, Driver

Dimensions (Unit : mm)

EMT3F

z

Features

1)Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

2)The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.

3)Only the on/off conditions need to be set for
operation, making the device design easy.

Structure

NPN silicon epitaxial planar transistor type

(Resistor built-in)

Packaging specifications

z

EMT3F

TL

3000

Part No.
DTC144EEB

Package
Packaging type Taping
Code
Basic ordering unit (pieces)

(1) IN
(2) GND
(3) OUT

Equivalent circuit

R

1

IN

R

2

IN

R1=R2=47kΩ

0.26
(3)

0.37

1.6

0.86

(1) (2)

0.37

0.5 0.5

Abbreviated symbol : 26

GND

1.6

1.0

0.7

0.13

Each lead has same dimensions

OUT

GND

OUT

0.45

0.45

z

Absolute maximum ratings (T a=25qC)

Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Storage temperature

∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land

V

V

Io

P

Tj

Tstg

CC

IN

∗1

∗2

D

LimitsParameter Symbol

50

−10 to +40
100 mAIc(max)

30
150
150

−55 to +150

Unit

V
V

mA

mW

°C
°C

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Transistors ! DTC144EEB

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Electrical characteristics (Ta=25qC)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

Characteristics of built-in transistor

∗

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Electrical characteristic curves

100

50

20

(V)

I(on)

10

Ta= −40°C

5

2
1

500m

INPUT VOLTAGE : V

200m
100m

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

25°C

100°C

OUTPUT CURRENT : I

O

(A)

Fig.1 Input voltage vs. output current

(ON characteristics)

1

500m

Ta=100°C

200m
100m

50m

20m
10m

5m

OUTPUT VOLTAGE : VO(on) (V)

2m
1m

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

25°C

−40°C

OUTPUT CURRENT : IO (A)

Fig.4 Output voltage vs. output

current

V

I(off)

V

I(on)

V

O(on)

I

I

I

O(off)

G

f

T

R

1

R2/R

VO=0.3V

lO/lI=20

Min.

Typ. Max. Unit Conditions

500

mV

−

−

3.0

−

−

−

I

68

−

∗

32.9

1

0.8

10m

5m
2m

(A)

1m

500μ
200μ

100μ

50μ
20μ

10μ

OUTPUT CURRENT : Io

−

100

−

−

−

250

47

1.0

Ta=100°C

5μ
2μ

1μ

VCC=5V

−40°C

0.5 1.0 1.5 2.0 2.5 3.00

25°C

−

300
180
500

−

−

61.1

1.2

INPUT VOLTAGE : V

Fig.2 Output current vs. input voltage

(OFF characteristics)

V

CC

=5V, IO=100μA

V

V

O

=0.3V, IO=2mA

mV

I

O/II

=10mA/0.5mA

μA

V

I

=5V

V

CC

nA

−

MHz

kΩ

=50V, VI=0V

V

O

=5V, IO=5mA

CE

=10V, IE= −5mA, f=100MHz

V

−

−−

1k

500

Ta=100°C

I

200
100

50

20
10

DC CURRENT GAIN : G

I(off)

(V)

25°C

−40°C

5

2
1

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

OUTPUT CURRENT : I

Fig.3 DC current gain vs. output

current

V

O=

5V

O

(A)

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