ROHM DTC144EB, DTC144EE, DTC144EKA, DTC144EM, DTC144EUA Schematic [ru]

100mA / 50V Digital transistors
(with built-in resistors)

DTC144EB / DTC144EM / DTC144EE / DTC144EUA / DTC144EKA

zApplications
Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors
(see equivalent circuit).

2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have
the advantage of almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation, making the device design easy.

zStructure

NPN epitaxial planar silicon transistor (Resistor built-in type)

zDimensions (Unit : mm)

DTC144EB

ROHM :

VMN3

DTC144EM

ROHM : VMT3

DTC144EUA

ROHM : UMT3
EIAJ : SC-70

0.22

0.1

(3)

0.8

1.0

0.1

(1) (2)

0.17

0.35

0.6

Abbreviated symbol : 26

1.2

0.32

0.2

(3)

1.2

0.8

(2)

(1)

0.22

Abbreviated symbol : 26

2.0

(3)

(2)

0.65

0.65

1.3

Abbreviated symbol : 26

0.3

0.40.4

0.8

(1)

1.25

0.2

0.2

2.1

0.16

0.37

(1) IN
(2) GND
(3) OUT

0.13

0.5

0.9

0.7

0.15

Each lead has same dimensions

0.1Min.

(1) IN
(2) GND
(3) OUT

(1) GND
(2) IN
(3) OUT

DTC144EE

ROHM : EMT3

DTC144EKA

ROHM : SMT3
EIAJ : SC-59

1.6

0.3

(3)

0.8

(2)

(1)

0.2

0.2

0.5

0.5

1.0

Abbreviated symbol : 26

2.9

0.4

(3)

(2)

0.95 0.95

(1)

1.9

Abbreviated symbol : 26

0.7

0.55

1.6

0.15

1.1

0.8

1.6

2.8

0.15

Each lead has same dimensions

0.1Min.

0.3Min.

(1) GND
(2) IN
(3) OUT

(1) GND
(2) IN
(3) OUT

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2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.B

m

100

t

.0

10m

e

(OFF characteristics)

zPackaging specifications zEquivalent circuit

TL

−

−

−

−

50

30

0.5

−

0.3

0.18

0.5

−

61.1

1.2

−

UMT3EMT3 SMT3

T106

3000

−

−

−

T146

3000

−

−

−

IN

IN

−

−

DTC144EUA DTC144EKADTC144EB

CC

V

V

V

O

V

I

O/II

mA

V

I

=5V

µA

V

CC

V

−

O

kΩ

Unit

mA

mW

°C
°C

=5V, IO=100µA

=0.3V, IO=2mA

=10mA/0.5mA

=50V, VI=0V

=5V, IO=5mA

R1=R2=47kΩ

V
V

−

−−

MHz

V

CE

=10V, IE= −5mA, f=100MHz

VCC=5V

5m

Ta=100°C

2m

(A)

OUTPUT CURRENT : Io

25°C

1m

−40°C

500µ
200µ

100µ

50µ
20µ

10µ

5µ
2µ

1µ

0.5 1.0 1.5 2.0 2.5 3

0

INPUT VOLTAGE : V

I(off)

(V)

Fig.2 Output current vs. input voltag

R

1

R

2

GND

Package

VMN3

VMT3

Packaging type TapingTapingTaping Taping Taping

Part No.

DTC144EB
DTC144EM
DTC144EE
DTC144EUA
DTC144EKA

Code
Basic ordering

unit (pieces)

T2L

8000

T2L

8000

−

−

−

−

−

−

−

−

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Supply voltage
Input voltage

Output current

Power dissipation
Junction temperature
Storage temperature

V

V

I

I

C(Max.)

P

Tj

Tstg

CC

IN

O

D

150 200

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency

Characteristics of built-in transistor

∗

V
V

V

O(on)

I

O(off)

G
R

R2/R

I(off)

I(on)

f

I

I

I

1

1

T

∗

Typ. Max. Unit Conditions

Min.

−

3

−

−

−

68

32.9

0.8
250

−

zElectrical characteristic curves

O

(A)

VO=0.3V

50

20

(V)

I(on)

10

Ta= −40°C

5

2
1

500m

INPUT VOLTAGE : V

200m
100m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100

25°C

100°C

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output curren

(ON characteristics)

3000

Limits

DTC144EEDTC144EM

−10 to +40

100

150

−55 to +150

−

−

0.1

−

−

−

47

1

Data Sheet DTC144EB / DTC144EM / DTC144EE / DTC144EUA / DTC144EKA

OUT

GND

OUT

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2009 ROHM Co., Ltd. All rights reserved.

2009.03 - Rev.B