ROHM DTC143ZUB Schematic [ru]

Transistors DTC143ZUB

100mA / 50V Digit al transistors (with built-in resistors)

DTC143ZUB

zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for
operation, making the device design easy.

zStructure zEquivalent circuit

NPN silicon epitaxial planar transistor type
(Resistor built-in)

zPackaging specifications

UMT3F

TL

3000

Part No.
DTC143ZUB

Package
Packaging type Taping
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

LimitsParameter Symbol

Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature

∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land

V

V

Ic(max)

P

Tstg

CC

IN

∗1

Io

∗2

D

Tj

50

−5 to +30
100 mA
100

200
150

−55 to +150

UMT3F

(1) IN
(2) GND
(3) OUT

IN

R1=4.7kΩ, R2=47kΩ

Unit

V
V

mA

mW

°C
°C

2.0

0.32
(3)

0.4250.425

2.1

1.25

(1) (2)

0.65 0.65

1.3

Abbreviated symbol : 123

R

1

R

2

IN

GND

0.9

0.530.53

0.13

Each lead has same dimensions

OUT

GND

OUT

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Transistors DTC143ZUB

zElectrical characteristics (T a=25°C)

Parameter

Input voltage
Output voltage

Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

Characteristics of built-in transistor

∗

Symbol

V

I(off)

V

I(on)

V

O(on)

I

I

I

O(off)

G

I

f

T

R

1

R2/R

1

zElectrical characteristic curves

100

50

20

(V)

I(on)

10

5

Ta= −40°C

2
1

500m

INPUT VOLTAGE : V

200m
100m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

25°C

100°C

OUTPUT CURRENT : I

Fig.1 Input voltage vs. output current

(ON characteristics)

O

(A)

VO=0.3V

1

500m

(V)

200m

O(on)

100m

50m

20m
10m

5m

OUTPUT VOLTAGE : V

2m
1m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

Ta=100°C

25°C

−40°C

OUTPUT CURRENT : I

Fig.4 Output voltage vs. output

current

lO/lI=20

O

(A)

Typ. Max. Unit Conditions

Min.

−

1.3

−

−

−

80

−

3.29
8

0.5

−

−

−

300

100

1.8

−

500

−

−

−

250

−

6.11

4.7
12

10

10m

5m
2m

1m

(A)

500µ
200µ

100µ

50µ
20µ

10µ

OUTPUT CURRENT : Io

5µ
2µ

1µ

0.5 1.0 1.5 2.0 2.5 3.00
INPUT VOLTAGE : V

V

CC

V

mV
mA

nA

−

MHz

=5V, IO=100µA

V

O

=0.3V, IO=5mA

I

O

=5mA, II=0.25mA

VI=5V

VCC=50V, VI=0V
V

O

=5V, IO=10mA

CE

=10V, IE= −5mA, f=100MHz∗

V

kΩ

−−

Ta=100°C

25°C

−40°C

Fig.2 Output current vs. input voltage

(OFF characteristics)

−

1k

VCC=5V

I(off)

(V)

500

Ta=100°C

I

200
100

50
20

10

5

DC CURRENT GAIN : G

2
1

25°C

−40°C

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

OUTPUT CURRENT : I

O

(A)

Fig.3 DC current gain vs. output

current

VO=5V

2/2