ROHM DTC143XUB Schematic [ru]
Transistors DTC143XUB
100mA / 50V Digit al transistors (with built-in resistors)
DTC143XUB
zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making the device design easy.
zStructure zEquivalent circuit
NPN silicon epitaxial planar transistor type
(Resistor built-in)
zPackaging specifications
UMT3F
TL
3000
Part No.
DTC143XUB
Package
Packaging type Taping
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
LimitsParameter Symbol
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land
V
V
Ic(max)
P
Tstg
CC
IN
∗1
Io
∗2
D
Tj
50
−7 to +20
100 mA
100
200
150
−55 to +150
UMT3F
(1) IN
(2) GND
(3) OUT
IN
IN
R1=4.7kΩ, R2=10kΩ
Unit
V
V
mA
mW
°C
°C
0.32
0.4250.425
2.1
1.25
Abbreviated symbol : 43
R
1
R
2
2.0
(3)
(1) (2)
0.65 0.65
1.3
GND
0.9
0.530.53
0.13
Each lead has same dimensions
OUT
GND
OUT
1/2
Transistors DTC143XUB
zElectrical characteristics (T a=25°C)
Parameter Symbol
I(off)
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor
V
V
V
O(on)
I
O(off)
G
R
R2/R
I(on)
I
f
T
I
I
∗
1
1
zElectrical characteristic curves
100
50
20
(V)
I(on)
10
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Ta=−40°C
100°C
OUTPUT CURRENT : I
Fig.1 Input voltage vs. output current
(ON characteristics)
25°C
O
(A)
VO=0.3V
1
500m
(V)
200m
O(on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Ta=100°C
25°C
−40°C
OUTPUT CURRENT : I
Fig.4 Output voltage vs. output
current
O
lO/lI=20
(A)
Typ. Max. Unit Conditions
Min.
−
−
−
2.5
100
−
−
−
−
−
−
30
250
−
4.7
3.29
2.1
1.7
10m
5m
2m
(A)
1m
500µ
200µ
100µ
50µ
20µ
10µ
OUTPUT CURRENT : Io
5µ
2µ
1µ
0 3.0
0.3
−
300
1.8
500
−
−
6.11
2.6
0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : V
V
CC
V
O
=0.3V, IO=20mA
V
I
O
=10mA, II=0.5mA
mV
V
mA
I
=5V
nA
V
CC
−
V
O
=5V, IO=10mA
MHz
CE
V
kΩ
−−
Ta=100°C
25°C
−40°C
Fig.2 Output current vs. input voltage
(OFF characteristics)
=5V, IO=100µA
=50V, VI=0V
=10V, IE=−5mA, f=100MHz
−
1k
VCC=5V
I(off)
(V)
500
I
200
100
50
20
10
5
DC CURRENT GAIN : G
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Fig.3 DC current gain vs. output
Ta=100°C
25°C
−40°C
OUTPUT CURRENT : I
current
VO=5V
O
(A)
2/2
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