ROHM DTC143XEB Schematic [ru]

Transistors ! DTC143XEB

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100mA / 50V Digital transistors
(with built-in resistors)

DTC143XEB

Applications

Inverter, Interface, Driver

Dimensions (Unit : mm)

EMT3F

z

Features

1)Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

2)The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.

3)Only the on/off conditions need to be set for
operation, making the device design easy.

Structure

NPN silicon epitaxial planar transistor type

(Resistor built-in)

Packaging specifications

z

EMT3F

TL

3000

Part No.
DTC143XEB

Package
Packaging type Taping
Code
Basic ordering unit (pieces)

1.6

(1) IN
(2) GND
(3) OUT

Equivalent circuit

R

IN

1

R

2

IN

R1=4.7kΩ, R2=10kΩ

1.6

0.26
(3)

0.37

0.86

(1) (2)

0.37

0.5 0.5

1.0

Abbreviated symbol : 43

OUT

GND

OUT

GND

0.7

0.45

0.13

Each lead has same dimensions

0.45

z

Absolute maximum ratings (T a=25qC)

Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of Storage temperature

∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land

V

V

Io

P

Tj

Tstg

LimitsParameter Symbol

CC

IN

∗1

∗2

D

50

−7 to +20
100 mAIc(max)
100

150
150

−55 to +150

Unit

V
V

mA

mW

°C
°C

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Transistors ! DTC143XEB

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Electrical characteristics (Ta=25qC)

Parameter Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

∗ Characteristics of built-in transistor

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Electrical characteristic curves

100

50

20

(V)

I(on)

10

=−40°C

5

2
1

500m

INPUT VOLTAGE : V

200m
100m

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

Ta

25°C

100°C

OUTPUT CURRENT : I

O

(A)

Fig.1 Input voltage vs. output current

(ON characteristics)

1

500m

(V)

200m

O(on)

100m

50m

20m
10m

5m

OUTPUT VOLTAGE : V

2m
1m

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m100m

Ta=100°C

25°C

−40°

C

OUTPUT CURRENT : I

O

(A)

Fig.4 Output voltage vs. output

current

V

I(off)

V

I(on)

V

O(on)

I

O(off)

G

f

R

R2/R

V

lO/lI=20

I

I

I

T

1

O

=0.3V

Min.

Typ. Max. Unit Conditions

300

−

−

−

2.5
100

−

−

−

−

−

−

30

250

−

4.7

3.29

2.1

1.7

1

10m

5m
2m

(A)

1m

500μ
200μ

100μ

50μ
20μ

10μ

OUTPUT CURRENT : Io

5μ
2μ

1μ

03.0

mV

−

300

mV

1.8

mA

500

nA

−

−

MHz

6.11

kΩ

2.6

0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : V

Fig.2 Output current vs. input voltage

(OFF characteristics)

V

CC

=5V, IO=100μA

V

O

=0.3V, IO=20mA

V

I

O/II

=10mA/0.5mA

V

I

=5V

V

CC

=50V, VI=0V

O

=5V, IO=10mA

V

−

CE

=10V, IE=−5mA, f=100MHz∗

V

−

−−

1k

500

I

200
100

50
20

10

5

DC CURRENT GAIN : G

2
1

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m100m

OUTPUT CURRENT : I

Ta=100°C

25°C

−40°C

VCC=5V

I(off)

(V)

Fig.3 DC current gain vs. output

current

Ta=100°C

25°C

−40°C

VO=5V

O

(A)

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