ROHM DTC143TEB Schematic [ru]
Transistors ! DTC143TEB
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!!!!!!!!!!!!!!
100mA / 50V Digital transistors
(with built-in resistors)
DTC143TEB
Applications
Inverter, Interface, Driver
Dimensions (Unit : mm)
EMT3F
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Features
1)Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2)The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for
operation, making the device design easy.
Structure
NPN silicon epitaxial planar transistor type
(Resistor built-in)
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Packaging specifications
EMT3F
TL
3000
Part No.
DTC143TEB
Package
Packaging type Taping
Code
Basic ordering unit (pieces)
(1) Base
(2) Emitter
(3) Collector
Equivalent circuit
B
R
1
B : Base
C : Collector
E : Emitter
R1=4.7kΩ
0.26
(3)
0.37
1.6
0.86
(1) (2)
0.37
0.5 0.5
Abbreviated symbol : 03
1.6
1.0
0.7
0.45
0.13
Each lead has same dimensions
0.45
C
E
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Absolute maximum ratings (T a=25qC)
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Power dissipation
Junction temperature
Range of Storage temperature
∗1 Each terminal mounted on a recommended land
V
CBO
V
CEO
EBO
I
P
Tj
Tstg
C
∗1
D
LimitsParameter Symbol
50
50
5VV
100
150
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
1/2
Transistors ! DTC143TEB
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!!!!!!!!!!!!!!
Electrical characteristics (Ta=25qC)
Parameter Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Inputa resistance
∗ Characteristics of built-in transistor
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Electrical characteristic curves
1k
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : I
Fig.1 DC current gain vs.
collector current
VCE=5V
C
(A)
BV
BV
BV
V
CEO
CBO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
T
f
R
∗
!
Typ. Max. Unit Conditions
Min.
−
−
50
−
−
50
−
−
5
500
−
−
500
−
−
150
−
−
600
250
100
−
250
−
5.9 −
4.7
3.5
1
(V)
500m
CE(sat)
200m
100m
50m
20m
10m
5m
2m
1m
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
25°C
−40°C
COLLECTOR CURRENT : I
V
VI
V
nA
nA
mV
−
MHz
kΩ
I
C
=
1mA
C
=
50μA
I
E
=
50μA
V
CB
V
EB
C/IB
I
V
CE
VCE=10V, I
lC/lB=20
C
(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
=
50V
=
4V
=
5mA/0.25mA
=
5V, I
C
=
1mA
E
=
−
5mA, f=100MHz
2/2
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