ROHM DTC125TUA Technical data
100mA / 50V Digital transistor
(with built-in resistor)
DTC125TUA / DTC125TKA
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input, and parasitic
effects are almost completely eliminated.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
4) Higher mounting densities can be achieved.
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
Part No.
DTC125TUA
DTC125TKA
Package
Packaging type
Code
Basic ordering unit (pieces)
UMT3
Taping
T106
3000
SMT3
Taping
T146
3000
−
−
Inner circuit
DTC125TUA
ROHM : UMT3
EIAJ : SC-70
DTC125TKA
ROHM : SMT3
EIAJ : SC-59
B
R
1
E : Emitter
C : Collector
B : Base
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 0A
2.9
0.4
(3)
(2)
0.95 0.95
1.9
Abbreviated symbol : 0A
C
E
(1)
1.25
0.9
0.7
0.2
2.1
0.15
1.1
0.8
1.6
2.8
0.15
(1) Emitter
0.1Min.
(2) Base
(3) Collector
Each lead has same dimensions
(1) Emitter
0.3Min.
(2) Base
(3) Collector
Each lead has same dimensions
R
1
=200kΩ
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
Absolute maximum ratings (Ta=25C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Input resistance
Transition frequency
Characteristics of built-in transistor
∗
Electrical characteristic curves
1k
V
CE
=5V
500
200
FE
100
50
20
10
5
DC CURRENT GAIN : h
2
1
10μ 20μ 50μ 100μ 200μ 500μ 1m 2m 5m 10m
Ta=25°C
COLLECTOR CURRENT : I
Ta=100°C
Ta= −40°C
C
(A)
Fig.1 DC current gain
vs. Collector current
BV
BV
BV
I
I
V
CE(sat)
CBO
EBO
h
R
f
CBO
CEO
EBO
FE
1
T
Limits
CBO
V
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
50
50
5
−
−
−
100
140
−
∗
1
IC/I
B
=10/1
(V)
500m
CE(sat)
200m
100m
50m
20m
10m
5m
2m
1m
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
10μ 20μ 50μ 100μ 200μ 500μ 1m 2m 5m 10m
COLLECTOR CURRENT : I
50
50
5
100
200
150
−55 to +150
−
−
−
−
−
−
250
200
250
−
−
−
0.5
0.5
0.3
600
260
−
Ta=25°C
Ta= −40°C
C
(A)
Unit
V
V
V
mA
mW
°C
°C
V
V
V
μA
μA
V
−
kΩ
MHz
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Data Sheet DTC125TUA / DTC125TKA
I
C
=
50μA
I
C
=
1mA
I
E
=
50μA
V
CB
=
50V
V
EB
=
4V
I
C
=
0.5mA , I
I
C
=
1mA , V
V
CE
=
10V , I
B
=
0.05mA
CE
=
5V
−
E
=
−5mA , f=100MHz
www.rohm.com
2/2
c
○
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
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