ROHM DTC125TUA, DTC125TSA, DTC125TKA Datasheet
DTC125TUA / DTC125TKA / DTC125TSA
Transistors
Digital transistor (built-in resistor)
DTC125TUA / DTC125TKA / DTC125TSA
Features
!
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input, and parasitic effects are almost completely
eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
Absolute maximum ratings
!
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Package, marking, and packaging specifications
!
Basic ordering unit (pieces)
Parameter Symbol
DTC125TUA / DTC125TKA
DTC125TSA
Part No. DTC125TUA
Package
Marking
Packaging code
(Ta = 25°C)
UMT3
0A
T106
3000
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
DTC125TKA
SMT3
0A
T146
3000
Limits
50
50
100
200
300
150
−
55
∼ +
5
150
Unit
mA
mW
°C
°C
DTC125TSA
SPT
−
TP
5000
V
V
V
External dimensions
!
DTC125TUA
0.3
0.15
0.1to0.4
ROHM : UMT3
EIAJ : SC-70
DTC125TKA
0.4
0.15
0.3to0.6
ROHM : SMT3
EIAJ : SC-59
DTC125TSA
3
)
15Min.
(
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
(Units : mm)
)
1
(
0.65
)
2
2.0
)
3
(
)
3
(
42
5
1.3
(
0.65
1.25
2.1
0.2
0.9
0.7
0to0.1
Each lead has same dimensions
)
1
(
1.9
2.9
)
2
(
0.95 0.95
1.6
2.8
1.1
0.8
0to0.1
Each lead has same dimensions
3Min.
0.45
0.45
2.5
0.5
Taping specifications
(1) Emitter(Source
(2) Base(Gate
(3) Collector(Drain
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
(1) Emitter
(2) Collector
(3) Base
)
)
)
Electrical characteristics
!
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Input resistance
Transition frequency
∗
Parameter Symbol Min. Typ. Max. Unit Conditions
transfer ratio
Transition frequency of the device.
(Ta = 25°C)
BV
BV
BV
V
I
CBO
I
EBO
CE(sat)
h
R
f
µA
µA
kΩ
MHz
I
V
C
=
50µA
V
C
=
1mA
I
V
I
E
=
50µA
V
CB
=
50V
V
EB
=
4V
V
I
C
=
0.5mA , IB =
−
I
C
=
1mA , V
CE
=
V
CE
10V , IE = -
0.05mA
=
5V
−
5mA , f = 100MHz
−
250
200
250
−
−
−
−
−
−
0.5
−
0.5
−
0.3
600
260
−
CBO
50
CEO
50
EBO
FE
T
5
−
−
−
100
1
140
−
∗
Circuit schematic
!
B
R
1
E : Emitter
C : Collector
B : Base
C
E
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