ROHM DTC125TKA, DTC125TSA, DTC125TUA Schematic [ru]
DTC125TUA / DTC125TKA / DTC125TSA
Transistors
100mA / 50V Digit al transistor (with built-in resistor)
DTC125TUA / DTC125TKA / DTC125TSA
zApplic ations
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration
of an inverter circuit without connecting external
input resistors.
2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input, and parasitic effects are almost
completely eliminated.
3) Only the on / off conditions need to be set for
operation, making the device design easy.
4) Higher mounting densities can be achieved.
zStructure
NPN epitaxial planar silicon transistor (Resistor
built-in type)
zPackaging specifications
SPT
Taping
T146
3000
TP
5000
−−
−
Part No.
DTC125TUA
DTC125TKA
DTC125TSA
Package
Packaging type
Code
Basic ordering unit (pieces)
SMT3
UMT3
Taping
Taping
T106
3000
−
−−
zEquivalent c ircuit
B
R
E : Emitter
C : Collector
B : Base
1
C
E
zExternal dimensions (Unit : mm)
DTC125TUA
ROHM : UMT3
EIAJ : SC-70
DTC125TKA
ROHM : SMT3
EIAJ : SC-59
DTC125TSA
ROHM : SPT
EIAJ : SC-72
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 0A
2.9
0.4
(3)
(2)
0.95 0.95
1.9
Abbreviated symbol : 0A
4.0 2.0
3.0
(15Min.)
5.0
(1) (2) (3)
Abbreviated symbol : C125TS
0.9
0.7
0.2
2.1
1.25
0.15
1.1
0.8
1.6
2.8
(1)
0.15
3Min.
0.45
2.5
0.5
(1) Emitter
0.1Min.
(2) Base
(3) Collector
Each lead has same dimensions
(1) Emitter
0.3Min.
(2) Base
(3) Collector
Each lead has same dimensions
0.45
(1) Emitter
(2) Collector
(3) Base
R
1
=200kΩ
Rev.B 1/2
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
DTC125TUA / DTC125TKA
DTC125TSA
Junction temperature
Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
BV
BV
BV
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
V
Input resistance
Transition frequency
Characteristics of built-in transistor
∗
zElectrical characteristic curves
1k
V
CE
=5V
500
200
FE
100
50
20
10
5
DC CURRENT GAIN : h
2
1
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
Ta=25°C
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. Collector current
Ta=100°C
Ta= −40°C
C
(A)
DTC125TUA / DTC125TKA / DTC125TSA
Limits
CBO
V
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
R
f
T
50
50
5
−
−
−
100
140
1
−
∗
1
IC/I
B
=10/1
(V)
500m
CE(sat)
200m
100m
50m
20m
10m
5m
2m
1m
COLLECTOR SATURATION VOLTAGE : V
Ta=100°C
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : I
50
50
5
100
200
300
150
−55 to +150
−
−
−
−
−
−
250
200
250
−
−
−
0.5
0.5
0.3
600
260
−
Ta=25°C
Ta= −40°C
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Unit
V
V
V
mA
mW
°C
°C
C
=
V
V
V
µA
µA
V
−
kΩ
MHz
C
(A)
50µA
I
I
C
=
1mA
E
=
50µA
I
V
CB
=
V
EB
=
I
C
=
0.5mA , I
I
C
=
1mA , V
CE
=
V
50V
4V
10V , I
B
=
0.05mA
CE
=
5V
−
E
=
−5mA , f=100MHz
Rev.B 2/2
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