ROHM DTC124GUA Technical data
100mA / 50V Digital transistors
(with built-in resistors)
DTC124GUA / DTC124GKA
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
Features
1) The built-in bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input, and parasitic effects
are almost completely eliminated.
2) Only the on / off conditions need to be set for operation, making the
device design easy.
3) Higher mounting densities can be achieved.
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
SMT3
T146
3000
−
−
Part No.
DTC124GUA
DTC124GKA
Package
Packaging type
Code
Basic ordering unit (pieces)
UMT3
Taping Taping
T106
3000
Absolute maximum ratings (Ta=25C) Inner circuit
Unit
V
V
V
mA
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
P
Tj
Tstg
LimitsParameter Symbol
50
50
5
C
C
100
200
150
−55 to +150
DTC124GUA
ROHM : UMT3
EIAJ : SC-70
DTC124GKA
ROHM : SMT3
EIAJ : SC-59
B
E : Emitter
C : Collector
B : Base
R=22kΩ
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : K25
2.9
0.4
(3)
(2)
0.95 0.95
1.9
Abbreviated symbol : K25
C
R
E
0.9
0.7
0.2
2.1
1.25
(1) GND
0.15
1.1
0.8
1.6
2.8
(1)
0.15
(2) IN
0.1Min.
(3) OUT
(1) GND
(2) IN
0.3Min.
(3) OUT
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗ Characteristics of built-in transistor
Electrical characteristic curves
1k
V
CE
=5V
500
200
FE
100
50
20
10
5
DC CURRENT GAIN : h
2
1
100∝ 200∝ 500∝ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I
Ta=25°C
Ta=100°C
Ta= 40°C
C
(A)
Fig.1 DC current gain
vs. Collector current
Symbol
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
R
T
f
Min.
140
15.4
Typ. Max. Unit Conditions
C
50
−
−
50
−
−
5
−
−
−
−
0.5
−
260
−
−
0.3
56
−
−
22
28.6
−
250
−
1
I
C
/
I
B
=20/1
) (V)
500m
sat
(
CE
200m
100m
50m
20m
10m
5m
2m
1m
100∝ 200∝ 500∝ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
=50μA
I
V
C
=1mA
I
V
I
E
=330μA
V
CB
=50V
V
μA
V
EB
μA
V
−
=4V
I
C
=10mA, IB=0.5mA
C
=5mA, VCE=5V
I
kΩ−
V
CE
MHz
=10V, IE= −5mA, f=100MHz∗
Ta=25°C
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Ta=100°C
Ta= 40°C
C
(A)
Data Sheet DTC124GUA / DTC124GKA
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
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