ROHM DTC124EUB Schematic [ru]
Transistors DTC124EUB
100mA / 50V Digit al transistors (with built-in resistors)
DTC124EUB
zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making the device design easy.
zStructure zEquivalent circuit
NPN silicon epitaxial planar transistor type
(Resistor built-in)
zPackaging specifications
UMT3F
TL
3000
Part No.
DTC124EUB
Package
Packaging type Taping
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
LimitsParameter Symbol
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land
V
V
Ic(max)
P
Tstg
CC
IN
∗1
Io
∗2
D
Tj
50
−10 to +40
100 mA
30
200
150
−55 to +150
UMT3F
(1) IN
(2) GND
(3) OUT
Unit
V
V
mA
mW
°C
°C
R
IN
IN
R1=R2=22kΩ
0.32
0.4250.425
2.1
1.25
0.65 0.65
Abbreviated symbol : 25
1
R
2
GND
2.0
(3)
(1) (2)
1.3
OUT
GND
OUT
0.9
0.530.53
0.13
Each lead has same dimensions
1/2
Transistors DTC124EUB
zElectrical characteristics (T a=25°C)
Parameter Symbol
V
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
I(off)
V
I(on)
V
O(on)
I
O(off)
G
f
R
R2/R
I
I
I
∗
T
1
1
∗ Characteristics of built-in transistor
zElectrical characteristic curves
100
50
20
(V)
I(on)
10
Ta=−40°C
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
25°C
100°C
OUTPUT CURRENT : I
Fig.1 Input voltage vs. output current
(ON characteristics)
O
(A)
VO=0.2V
1
500m
(V)
200m
O(on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Ta=100°C
25°C
−40°C
OUTPUT CURRENT : I
Fig.4 Output voltage vs. output
current
O
lO/lI=20
(A)
Typ. Max. Unit Conditions
Min.
0.5
−
−
−−
3.0
300
100
−
360
−
−
−
−
500
−
56
−−
15.4
0.8
OUTPUT CURRENT : Io (A)
−
250
22
28.6
1.0
1.2
10m
VCC=5V
5m
2m
Ta=100°C
1m
25°C
500µ
−40°C
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0 3.0
0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : V
V
CC
V
V
O
=0.2V, IO=5mA
I
O
=10mA, II=0.5mA
mV
V
I
=5V
µ
A
V
nA
CC
−
O
=5V, IO=5mA
V
MHz
CE
V
kΩ
−−
Fig.2 Output current vs. input voltage
(OFF characteristics)
=5V, IO=100µA
=50V, VI=0V
=10V, IE=−5mA, f=100MHz
−
1k
500
I
200
100
50
20
10
5
DC CURRENT GAIN : G
2
1
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
I(off)
(V)
Fig.3 DC current gain vs. output
Ta=100°C
25°C
−40°C
OUTPUT CURRENT : I
current
VO=5V
O
(A)
2/2
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