ROHM DTC124EEB Schematic [ru]
Transistors DTC124EEB
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100mA / 50V Digital transistors
(with built-in resistors)
DTC124EEB
Applications
Inverter, Interface, Driver
Dimensions (Unit : mm)
EMT3F
!!!!!!!!
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Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making the device design easy.
Structure
NPN silicon epitaxial planar transistor type
(Resistor built-in)
Packaging specifications
z
EMT3F
TL
3000
Part No.
DTC124EEB
Package
Packaging type Taping
Code
Basic ordering unit (pieces)
1.6
(1) IN
(2) GND
(3) OUT
Equivalent circuit
R
1
IN
R
2
IN
R1=R2=22kΩ
1.6
0.26
(3)
0.37
0.86
(1) (2)
0.37
0.5 0.5
1.0
Abbreviated symbol : 25
OUT
GND
OUT
GND
0.7
0.45
0.13
Each lead has same dimensions
0.45
z
Absolute maximum ratings (Ta=25qC)
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land
V
V
Io
P
Tj
Tstg
LimitsParameter Symbol
CC
IN
∗1
∗2
D
50
−10 to +40
100 mAIc(max)
30
150
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
1/2
Transistors DTC124EEB
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Electrical characteristics (Ta=25qC)
Parameter Symbol
I(off)
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
V
V
V
O(on)
I
O(off)
G
R
R2/R
I(on)
I
f
I
T
∗ Characteristics of built-in transistor
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Electrical characteristic curves
100
50
20
(V)
I(on)
10
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
=−40°C
Ta
25°C
100°C
OUTPUT CURRENT : I
O
(A)
VO=0.2V
Fig.1 Input voltage vs. output current
(ON characteristics)
I
∗
1
1
Typ. Max. Unit Conditions
Min.
500
−
−
−−
3
300
100
−
360
−
−
−
−
500
−
56
−−
15.4
0.8
OUTPUT CURRENT : Io (A)
−
250
22
28.6
1
1.2
10m
VCC=5V
5m
2m
Ta=100°C
1m
25°C
500μ
−40°C
200μ
100μ
50μ
20μ
10μ
5μ
2μ
1μ
03.0
0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : VI(off) (V)
V
CC
mV
O
=0.2V, IO=5mA
V
V
O/II
mV
I
I
=5V
V
μA
V
nA
CC
−
V
O
=5V, IO=5mA
MHz
CE
V
kΩ
−−
Fig.2 Output current vs. input voltage
(OFF characteristics)
=5V, IO=100μA
=10mA/0.5mA
=50V, VI=0V
=10V, IE=−5mA, f=100MHz
−
1k
500
I
200
100
50
20
10
5
DC CURRENT GAIN : G
2
1
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
Fig.3 DC current gain vs. output
Ta=100°C
°C
25
−40°C
OUTPUT CURRENT : I
current
VO=5V
O
(A)
!!!!!!!!
1
500m
(V)
200m
O(on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
Ta=100°C
25°C
−40°C
OUTPUT CURRENT : I
lO/lI=20
O
(A)
Fig.4 Output voltage vs. output
current
2/2
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