ROHM DTC123TKA Technical data

Transistors

C

B

R1=2.2kΩ

E

R

1

E : Emitter
C : Collector
B : Base

200mA / 50V Digital transistor (with built-in resistor)

DTC123TKA

zApplicat ions

Inverter, Interface, Driver

zFeatures

1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.

2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input, and parasitic effects are almost completely
eliminated.

3) Only the on/ off conditions need to be set for operation,
making the device design easy .

4) Higher mounting densities can be achieved.

zStructure

NPN epitaxial planar silicon transistor

zPackaging specifications

Part No.

DTC123TKA

Package

Packaging type

Code

Basic ordering unit (pieces)

SMT3

Taping

T146

3000

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector Power dissipation

Junction temperature

Storage temperature

CBO

V

V

CEO

V

EBO

I

Pc

Tj

Tstg

C

zExternal dimensions (Unit : mm)

SMT3

(3)

(2)

0.95 0.95

(1)Emitter
(2)Base
(3)Collector

zEquivalent circ uit

Limits

50

50

5

100

200

150

−55 to +150

Unit

V

V

V

mA

mW

°C

°C

2.9

1.9

Abbriviated symbol : 02

DTC123TKA

0.4

1.1

0.8

1.6

2.8

(1)

0.15

0.3Min.

Each lead has same dimensions

Rev.A 1/2

Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current

transfer ratio

Input resistance

Transition frequency

Characteristics of built-in transistor.

∗

zElectrical characteristics curves

1k

500

FE

200

100

50

20

10

DC CURRENT GAIN : h

5

2

1

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

Ta=100°C

25°C

−40°C

COLLECTOR CURRENT : I

Fig.1 DC Current gain
vs. Collector Current

VCE=5V

C

(A)

BV

BV

BV

I

I

V

CE(sat)

h

CBO

EBO

R

fT

CBO

CEO

EBO

FE

1

∗

50

50

5

−−

−−

−

100 250 600

1.54

−

−−

−−

−−

0.5

0.5

0.3

−

2.2

2.86

250

1

(V)

500m

CE(sat)

200m

100m

50m

20m

10m

5m

2m

1m

100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR SATURATION VOLTAGE : V

V

IC=50µA

V

I

V

I

µA

V

µA

V

V

I

−

I

kΩ

MHz

V

Ta=100°C

−40°C

−

COLLECTOR CURRENT : I

C=1mA

E=50µA

CB=50V

EB=4V

C/IB=5mA/0.25mA

C=1mA , VCE=5V

CB=10V , IE= −5mA , f=100MHz

IC/IB=10

25°C

C

(A)

Fig.2 Collector-emitter saturation voltage
vs. Collector Current

DTC123TKA

−

Rev.A 2/2