ROHM DTC115TM, DTC115TE, DTC115TKA, DTC115TUA Technical data
r
r
100mA / 50V Digital transistors
(with built-in resistors)
DTC115TM / DTC115TE / DTC115TUA / DTC115TKA
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input, and parasitic effects are almost completely
eliminated.
3) Only the on / off conditions need to be set for
operation, making the device design easy.
4) Higher mounting densities can be achieved.
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
Package
Packaging type
Code
Basic ordering
unit (pieces)
Part No.
DTC115TM
DTC115TE
DTC115TUA
DTC115TKA
VMT3
T2L
8000
−
−
−
TapingTaping Taping Taping
3000
TL
−
−
−
UMT3EMT3 SMT3
T106
3000
T146
3000
−
−
−
−
−
−
Inner circuit
B
R
E : Emitter
C : Collector
B : Base
1
C
E
R1=100kΩ
DTC115TM
ROHM : VMT3
DTC115TE
ROHM : EMT3
DTC115TUA
ROHM : UMT3
EIAJ : SC-70
DTC115TKA
ROHM : SMT3
EIAJ : SC-59
1.2
0.32
(3)
(2)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : 09
1.6
0.3
(3)
(2)
0.2
(1)
0.5
0.5
1.0
Abbreviated symbol : 09
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : 09
2.9
0.4
(3)
(2)
0.95 0.95
1.9
Abbreviated symbol : 09
0.2
1.2
0.8
0.13
0.2
0.5
0.7
0.55
1.6
0.8
0.2
0.15
0.2
2.1
1.25
0.15
1.6
2.8
(1)
0.15
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
0.1Min.
(2) Base
(3) Collector
0.9
0.7
0.1Min.
(1) Emitter
(2) Base
(3) Collecto
1.1
0.8
0.3Min.
(1) Emitter
(2) Base
(3) Collecto
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2011 ROHM Co., Ltd. All rights reserved.
2011.11 - Rev.C
Absolute maximum ratings (Ta=25C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Input resistance
Transition frequency
Characteristics of built-in transistor.
∗
Electrical characteristics curves
1000
EF
h : NIAG TNERRUC CD
100
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
DTC115TM / DTC115TE
DTC115TUA / DTC115TKA
C
Pc
Tj
Tstg
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
transfer ratio
VCE=5V
Ta=100ºC
25ºC
-40ºC
CE(sat)
h
FE
R
1
f
T
∗
50
50
5
−
−
−
100
70
−
: EGATLOV NOITARUTAS ROTCELLOC
)V(
V
Limits
50
50
5
100
150
200
150
−55 to +150
−
−
−
−
−
−
250
100
250
1
)
tas(EC
0.1
−
−
−
0.5
0.5
0.3
600
130
−
IC/IB=20/1
Ta=10 0ºC
25ºC
-40ºC
Unit
mA
mW
˚C
˚C
Data Sheet DTC115TM / DTC115TE / DTC115TUA / DTC115TKA
V
V
V
I
V
C
=
50μA
V
I
C
=
1mA
V
I
E
=
μA
μA
kΩ
MHz
50μA
V
CB
=
50V
V
EB
=
I
I
C/IB
C
=
1mA, V
4V
=
1mA/0.1mA
CE
=
5V
V
−
−
CE
=
10V, I
E
=−
V
5mA, f=100MHz
10
0.1 1 10
COLLECTOR CURRENT : IC (mA)
Fig 1. DC Current Gain vs. Collector Current
0.01
0.01 0.1 1 10
OUTPUT CURRENT : IO (mA)
Fig 2. Collector Voltage vs.
Collector Saturation Voltage.
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c
○
2011 ROHM Co., Ltd. All rights reserved.
2011.11 - Rev.C
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