ROHM DTC115GKA, DTC115GUA Technical data
DTC115GUA / DTC115GKA
Transistors
100mA / 50V Digital transistors (with built-in resistor)
DTC1 15GUA / DTC115GKA
zApplications zExternal dimensions (Unit : mm)
Inverter, Interface, Driver
zFeatures
1) The built-in bias resistors consist of thin-film
resistors with complete isolation to allow negative
biasing of the input, and parasit ic effects are a lmost
completely eliminated.
2) Only the on / off conditions need to be set for
operation, making the device design easy .
3) Higher mounting densities can be achieved.
zStructure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
zPackaging specifications
SMT3
Taping
T146
3000
−
Part No.
DTC115GUA
DTC115GKA
Package
Packaging type
Code
Basic ordering unit (pieces)
UMT3
Taping
T106
3000
−
zAbsolute maximum ratings (Ta=25°C) zEquivalent circuit
Parameter
Collector-base voltage
Collector-emitter voltag
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
50
50
5
100
200
150
−55 to +150
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltag
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
Emitter-base resistance
Transition frequency
∗
transfer ratio
Characteristics of built-in transistor
BV
BV
V
I
CBO
I
EBO
CE(sat)
h
R
f
CEO
EBO
FE
T
50
50
5
−
30
−
82
70
−
∗
Unit
V
V
V
mA
mW
°C
°C
−
−
−
−
−
−
−
100
250
DTC115GUA
ROHM : UMT3
EIAJ : SC-70
DTC115GKA
ROHM : SMT3
EIAJ : SC-59
R=100kΩ
−
−
−
0.5
58
0.3
−
130
−
B
R
E : Emitter
C : Collector
B : Base
V
V
V
µA
µA
V
−
kΩ
MHz
2.0
0.2
0.3
(3)
2.1
1.25
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : K29
2.9
0.4
(3)
1.6
2.8
(2)
0.95 0.95
(1)
1.9
Abbreviated symbol : K29
C
E
I
C
=50µA
C
=1mA
I
I
E
=72µA
V
CB
=50V
EB
=4V
V
I
C
=5mA, IB=0.25mA
I
C
=5mA, VCE=5V
CE
=10V, IE=−5mA, f=100MHz
V
0.9
0.7
0.15
1.1
0.8
0.15
(1) Emitter
(2) Base
0.1Min.
Each lead has same dimensions
Each lead has same dimensions
(3) Collector
(1) Emitter
(2) Base
0.3Min.
(3) Collector
−
Rev.B 1/2
Transistors
zElectrical characteristics curves
1k
V
CE
=
500
200
100
OUTPUT CURRENT : lo
5V
Ta=100°C
Ta=25°C
50
20
10
5
2
1
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : I
Fig.1 DC current transfer ratio vs.
collector current characteristics
Ta = −40°C
C
(A)
DTC115GUA / DTC115GKA
1
(V)
lC/lB=20/1
500m
CE(sat)
200m
100m
50m
20m
10m
5m
2m
1m
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.2 Collector-emitter saturation voltage vs.
collector current characteristics
Ta=100°C
Ta=25°C
Ta=−40°C
C
(A)
Rev.B 2/2
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