ROHM DTC114TEB Schematic [ru]

Transistors ! DTC114TEB

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100mA / 50V Digit al transistors
(with built-in resistors)

DTC1 14TEB

Applications

Inverter, Interface, Driver

Dimensions (Unit : mm)

EMT3F

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Features

1)Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

2)The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.

3)Only the on/off conditions need to be set for
operation, making the device design easy.

Structure

NPN silicon epitaxial planar transistor type

(Resistor built-in)

Packaging specifications

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EMT3F

TL

3000

Part No.
DTC114TEB

Package
Packaging type Taping
Code
Basic ordering unit (pieces)

(1) Base
(2) Emitter
(3) Collector

Equivalent circuit

B

B : Base
C : Collector
E : Emitter

R

1

R1=10kΩ

0.26
(3)

0.37

1.6

0.86

(1) (2)

0.37

0.5 0.5

Abbreviated symbol : 04

1.6

1.0

0.7

0.45

0.13

Each lead has same dimensions

C

E

0.45

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Absolute maximum ratings (T a=25qC)

Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Power dissipation
Junction temperature
Range of Storage temperature

∗1 Each terminal mounted on a recommended land

V

CBO

V

CEO

EBO

I

P

Tj

Tstg

C

∗1

D

LimitsParameter Symbol

50
50

5VV
100
150
150

−55 to +150

Unit

V
V

mA

mW

°C
°C

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Transistors ! DTC114TEB

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Electrical characteristics (Ta=25qC)

Max. Unit Conditions

Parameter Symbol

Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance

∗ Characteristics of built-in transistor

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Electrical characteristic curves

1k

500

FE

200
100

50

20
10

5

DC CURRENT GAIN : h

2
1

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR CURRENT : I

Ta=100°C

25°C

−40°C

Fig.1 DC current gain vs. collector

current

C

V

(A)

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

R

1

CE

=

5V

Typ.

Min.

−

50

−

50

−

5

−

−

−

−

−

−

250

100

−

250

10

7

1

(V)

500m

CE(sat)

200m
100m

50m

20m

10m

5m

2m
1m

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : I

500
500

0.3

600

13

−

−

−

−

Ta

MHz

=100°C

25°C

−40°C

VI

C

I

C

V

I

V

E

nA

V

CB

nA

V

EB

V

C/IB

I

−

CE

V

CE

V

kΩ

C

(A)

=1mA
=50μA
=50μA

lC/lB=10

Fig.2 Collector-emitter saturation

voltage vs. collector current

=50V
=4V

=10mA/1mA
=5V, IC=1mA
=10V, IE=−5mA, f=100MHz∗

−

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