ROHM DTC114TE Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

DTC114T series

NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

l

Outline

l

Features

1) Built-In Biasing Resistors

2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).

3) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of
completely eliminating parasitic effects.

4) Only the on/off conditions need to be set for
operation, making the circuit design easy.

5) Complementary PNP Types :DTA114T series

6) Complex transistors :UMH8N /IMH8A

l

Inner circuit

/EMG4 /UMG4N /FMG4A （PNP type）

7) Lead Free/RoHS Compliant.

l

Application

Switching circuit, Inverter circuit, Interface circuit,
Driver circuit

l

Packaging specifications

8

3,000

04

DTC114TUB

UMT3F

2021

TL

180

8

3,000

04

DTC114TE

EMT3

1616

TL

180

VMT3

EMT3F

EMT3

UMT3F

UMT3

SMT3

3,000

04

DTC114TKA

SMT3

2928

T146

180

8

3,000

04

DTC114TUA

UMT3

2021

T106

180

8

DTC114TEB

EMT3F

1616

TL

180

3,000048

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

DTC114TM

VMT3

1212

T2L

180

8

8,000

Reel size

(mm)

04

Part No.

Package

Package

size

(mm)

Taping

code

Parameter

Value

V

CEO

50V

I

C

100mA

R

1

10kW

DTC114TM

(SC-105AA)

DTC114TE

SOT-416 (SC-75A)

Collector

Base

Emitter

Collector

Base

Emitter

DTC114TKA

SOT-346 (SC-59)

DTC114TUA

SOT-323 (SC-70)

Collector

Base

Emitter

Collector

Base

Emitter

Collector

Base

Emitter

Collector

Base

Emitter

DTC114TUB

(SC-85)

DTC114TEB

(SC-89)

1/9

2012.04 - Rev.A

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTC114T series

lAbsolute maximum ratings (Ta = 25C)

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector Power dissipation

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25C)

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

IC / IB= 10mA / 1mA

DC current gain

h

FE

VCE= 5V , IC= 1mA ,

Input resistance

R

1

-

Collector-emitter saturation voltage

V

CE(sat)

IE= 50μA

Collector cut-off current

I

CBO

V

CB

= 50V

Emitter cut-off current

I

EBO

V

EB

= 4V

Emitter-base breakdown voltage

BV

EBO

MHz

-

250

-

Transition frequency

fT

*1

V

CE

= 10V, IE = -5mA,

f = 100MHz

-710

13kW100

250

600mA--0.3V--0.5V--0.5mA5--

V

Collector-emitter breakdown voltage

BV

CEO

IC= 1mA

V50-50---

Collector-base breakdown voltage

BV

CBO

IC= 50μA

Unit

Min.

Typ.

Max.

Parameter

Symbol

Conditions

T

j

150

C

T

stg

-55 to +150

C

I

C

100

mA

DTC114TM
DTC114TEB
DTC114TE

P

C

*2

150

mW

DTC114TUB
DTC114TUA
DTC114TKA

200

mW

V

CEO

50

V

V

EBO

5

V

Parameter

Symbol

Values

Unit

V

CBO

50

V

2/9

2012.04 - Rev.A

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTC114T series

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Grounded emitter propagation
characteristics

COLLECTOR CURRENT : Ic (mA)

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.2 Grounded emitter output
characteristics

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER

VOLTAGE : VCE (V)

Fig.3 DC Current gain
vs. Collector Current

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC (mA)

Fig.4 Collector-emitter saturation voltage
vs. Collector Current

COLLECTOR SATURATION

VOLTAGE : V

CE

(sat) (V)

COLLECTOR CURRENT : IC (mA)

0

20

40

60

80

100

0 5 10

250μA

0A

300μA

350μA

400μA

450μA

500μA

200μA

150μA

100μA

IB=

Ta=25ºC

50μA

0.001

0.01

0.1

1

10

0 0.5 1 1.5 2

VCE=5V

Ta=100ºC

25

ºC

-40ºC

3/9

2012.04 - Rev.A