ROHM DTC114GUA, DTC114GKA Technical data
100mA / 50V Digital transistors
(with built-in resistor)
DTC114GUA / DTC114GKA
Applications Dimensions (Unit : mm)
Inverter, Interface, Driver
Features
1) The built-in bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input, and parasitic effects
are almost completely eliminated.
2) Only the on / off conditions need to be set for operation, making the
device design easy.
3) Higher mounting densities can be achieved.
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
Part No.
DTC114GUA
DTC114GKA
Package
Packaging type
Code
Basic ordering unit (pieces)
UMT3
Taping
T106
3000
SMT3
Taping
T146
3000
−
−
Absolute maximum ratings (Ta=25C) Inner circuit
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
Pc
Tj
Tstg
C
Limits
50
50
5
100
200
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
DTC114GUA
ROHM : UMT3
EIAJ : SC-70
DTC114GKA
ROHM : SMT3
EIAJ : SC-59
B
R
E : Emitter
C : Collector
B : Base
R=10kΩ
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : K24
2.9
0.4
(3)
(2)
0.95 0.95
(1)
1.9
Abbreviated symbol : K24
C
E
0.9
0.7
0.2
2.1
1.25
0.15
Each lead has same dimensions
1.1
0.8
1.6
2.8
0.15
Each lead has same dimensions
(1) Emitter
(2) Base
0.1Min.
(3) Collector
(1) Emitter
(2) Base
0.3Min.
(3) Collector
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
Electrical characteristics (Ta=25C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Emitter-base resistance
Transition frequency
Characteristics of built-in transistor
∗
Electrical characteristic curves
1k
V
CE
=5V
500
200
100
50
20
10
5
DC CURRENT GAIN : hFE
2
1
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
Ta=25°C
COLLECTOR CURRENT : I
Ta=100°C
Ta= −40°C
C
(A)
Fig.1 DC current gain
vs. Collector current
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
R
f
T
50
50
5
−
300
−
30
7
−
∗
1
IC/I
B
=20/1
(V)
500m
CE(sat)
200m
100m
50m
20m
10m
5m
2m
1m
COLLECTOR SATURATION VOLTAGE : V
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : I
−
−
−
−
−
−
−
10
250
Ta=25°C
−
−
−
0.5
580
0.3
−
13
−
Ta=100°C
Ta= −40°C
C
(A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
V
V
V
μA
μA
V
−
kΩ
MHz
I
C
=50μA
I
C
=1mA
I
E
=720μA
V
CB
EB
V
I
C
=10mA, IB=0.5mA
I
C
=5mA, VCE=5V
CE
V
Data Sheet DTC114GUA / DTC114GKA
=50V
=4V
−
=10V, IE= −5mA, f=100MHz
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○
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
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