ROHM DTC114EEB Schematic [ru]
Transistors DTC114EEB
100mA / 50V Digit al transistors (with built-in resistors)
DTC1 14EEB
zApplications zDimensions (Unit : mm)
Inverter, Interface, Driver
zFeatures
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making the device design easy.
zStructure zEquivalent circuit
NPN silicon epitaxial planar transistor type
(Resistor built-in)
zPackaging specifications
EMT3F
TL
3000
Part No.
DTC114EEB
Package
Packaging type Taping
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
LimitsParameter Symbol
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land
V
V
Io
P
Tj
Tstg
CC
IN
∗1
∗2
D
50
−10 to +40
100 mAIc(max)
50
150
150
−55 to +150
EMT3F
(1) IN
(2) GND
(3) OUT
R
IN
1
R
IN
R1=R2=10kΩ
Unit
V
V
mA
mW
°C
°C
0.37
1.6
0.86
0.37
2
1.6
0.26
(3)
(1) (2)
0.5 0.5
1.0
Abbreviated symbol : 24
OUT
GND
OUT
GND
0.7
0.45
0.13
Each lead has same dimensions
0.45
1/2
Transistors DTC114EEB
zElectrical characteristics (T a=25°C)
Parameter Symbol
I(off)
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor
V
V
V
O(on)
I
O(off)
G
R
R2/R
I(on)
I
f
I
I
T
1
1
zElectrical characteristic curves
100
50
20
(V)
I(on)
10
5
2
1
500m
INPUT VOLTAGE : V
200m
100m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
Ta=−40°C
25°C
100°C
OUTPUT CURRENT : I
Fig.1 Input voltage vs. output current
(ON characteristics)
1
500m
(V)
200m
O(on)
100m
50m
20m
10m
5m
OUTPUT VOLTAGE : V
2m
1m
100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
OUTPUT CURRENT : I
Ta=100°C
Fig.4 Output voltage vs. output
current
25°C
−40°C
O
(A)
O
(A)
VO=0.3V
lO/lI=20
∗
Typ. Max. Unit Conditions
Min.
500
−
−
−
−
3
300
100
−
880
−
−
500
−
−
−
−
30
−
250
−
13
10
7
1.2
1
0.8
10m
5m
2m
Ta=100°C
(A)
1m
25°C
500µ
−40°C
200µ
100µ
50µ
20µ
10µ
OUTPUT CURRENT : Io
5µ
2µ
1µ
0 3.0
0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : V
V
CC
mV
V
O
=0.3V, IO=10mA
V
I
O/II
mV
V
µA
I
=5V
nA
V
CC
−
V
O
=5V, IO=5mA
MHz
CE
V
kΩ
−−
I(off)
Fig.2 Output current vs. input voltage
(OFF characteristics)
=5V, IO=100µA
=10mA/0.5mA
=50V, VI=0V
=10V, IE=−5mA, f=100MHz
−
VCC=5V
1k
500
I
200
100
50
20
10
5
DC CURRENT GAIN : G
2
1
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
(V)
Fig.3 DC current gain vs. output
Ta=100°C
25°C
−40°C
OUTPUT CURRENT : I
current
VO=5V
O
(A)
2/2
Loading...