ROHM DTC114EE Technical data

Datasheet

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© 2012 ROHM Co., Ltd. All rights reserved.

DTC114E series

NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

l

Outline

l

Features

1) Built-In Biasing Resistors, R1 = R2 = 10kW.

2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).

3) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of
completely eliminating parasitic effects.

4) Only the on/off conditions need to be set for
operation, making the circuit design easy.

5) Complementary PNP Types :DTA114E series

6) Complex transistors :EMH11 /UMH11N /IMH11A

l

Inner circuit

/EMG9 /UMG9N/ FMG9A （NPN type）

7) Lead Free/RoHS Compliant.

l

Application

Switching circuit, Inverter circuit, Interface circuit,
Driver circuit

l

Packaging specifications

VMT3

EMT3F

EMT3

UMT3F

UMT3

SMT3

3,000

24

DTC114EKA

SMT3

2928

T146

180

8

3,000

24

DTC114EUA

UMT3

2021

T106

180

8

DTC114EUB

UMT3F

2021

TL

180

DTC114EE

EMT3

1616

TL

180

3,000248

3,000248TL180

8

3,000

24

Tape width

(mm)

Basic

ordering

unit (pcs)

Marking

DTC114EM

VMT3

1212

T2L

180

8

8,000

Reel size

(mm)

24

DTC114EEB

EMT3F

1616

Part No.

Package

Package

size

(mm)

Taping

code

Parameter

Value

V

CC

50V

I

C(MAX.)

100mA

R

1

10kW

R

2

10kW

DTC114EM

(SC-105AA)

OUT

IN

GND

OUT

IN

GND

DTC114EUB

(SC-85)

DTC114EE

SOT-416 (SC-75A)

DTC114EKA

SOT-346 (SC-59)

DTC114EUA

SOT-323 (SC-70)

DTC114EEB

(SC-89)

OUT

IN

GND

OUT

IN

GND

OUT

IN

GND

OUT

IN

GND

1/10

2012.04 - Rev.A

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTC114E series

lAbsolute maximum ratings (Ta = 25°C)

Supply voltage
Input voltage
Output current
Collector current

Power dissipation

Junction temperature
Range of storage temperature

lElectrical characteristics(Ta = 25°C)

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint

MHz

Transition frequency

fT

*1

V

CE

= 10V, IE = -5mA,

f = 100MHz

-

250

-

kW

Resistance ratio

R2/R

1

-

0.811.2

-

Input resistance

R

1

-

71013

mA

DC current gain

G

I

VO = 5V, IO = 5mA

30--

-

Output current

I

O(off)

V

CC

= 50V, VI = 0V

--0.5

V

Input current

I

I

VI = 5V

--0.88

mA

Output voltage

V

O(on)

IO / II = 10mA / 0.5mA

-

0.1

0.3

V
V

I(on)

VO = 0.3V, IO = 10mA

3--

0.5

Input voltage

V

I(off)

V

CC

= 5V, IO = 100μA

-

-

Parameter

Symbol

Conditions

Unit

Min.

Typ.

Max.

T

j

150

°C

T

stg

-55 to +150

°C

I

C(MAX.)

*1

100

mA

DTC114EM
DTC114EEB
DTC114EE

P

D

*2

150

mW

DTC114EUB
DTC114EUA
DTC114EKA

200

mW

V

IN

-10 to +40

V

I

O

50

mA

Parameter

Symbol

Values

Unit

V

CC

50

V

2/10

2012.04 - Rev.A

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© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTC114E series

lElectrical characteristic curves (Ta = 25°C)

Fig.1 Input voltage vs. output current
(ON characteristics)

INPUT VOLTAGE : V

I(on)

[V]

OUTPUT CURRENT : IO [A]

Fig.2 Output current vs. input voltage
(OFF characteristics)

OUTPUT CURRENT : I

O

[A]

INPUT VOLTAGE : V

I(off)

[V]

Fig.3 Output current vs. output voltage

OUTPUT CURRENT : I

O

[mA]

OUTPUT VOLTAGE : VO [V]

Fig.4 DC current gain vs. output current

DC CURRENT GAIN : G

I

OUTPUT CURRENT : IO [A]

0

10

20

30

40

50

0 5 10

0A

140μA

160μA

200μA

220μA

240μA

260μA

180μA

II=

Ta=25ºC

120μA

100μA

3/10

2012.04 - Rev.A

www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTC114E series

lElectrical characteristic curves (Ta = 25°C)

Fig.5 Output voltage vs. output current

OUTPUT VOLTAGE : V

O(on)

[V]

OUTPUT CURRENT : IO [A]

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2012.04 - Rev.A