ROHM DTC043ZUB Technical data

Data Sheet

100mA/50V Digital transistors(with built-in resistors)

DTC043ZM / DTC043ZEB / DTC043ZUB

Features Dimensions (Unit : mm)

1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See Equivalent circuit)

2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation,
making the device design easy.

VMT3

Abbreviated symbol : 42

EMT3F

(3)

Structure

NPN epitaxial planar silicon transistor
(Resistor built-in type)

Applications

Inverter, Interface, Driver

Packaging specifications and h

Package VMT3 EMT3F

FE

UMT3F

Equivalent circuit

Packaging Type Taping Taping Taping

Type

DTC043ZM
DTC043ZEB
DTC043ZUB - -

Code T2L TL

Basic ordering
unit (pieces)

8000 3000 3000

○

-○

TL

--

-

○

Absolute maximum (Ta=25C)

Parameter Symbol

Supply voltage

Input voltage

Collector current *1
Output current
Power dissipation *2

V

V

I

C(max)

I

P

CC

IN

O

D

Limits(DTC043Z□)

MEB UB

50 V
30 V

-5 V
100 mA
100 mA

150 200
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150

*1　Characteristics of built-in transistor

*2 Each terminal mounted on a reference land

(1) (2)

Abbreviated symbol : 42

UMT3F

0.32

0.4250.425

2.1

1.25

Abbreviated symbol : 42

R

IN

IN

=4.7k, R2=47k

R

1

2.0

(3)

(1) (2)

0.65 0.65

1.3

1

R

2

0.9

0.530.53

0.13

OUT

GND

OUT

GND

Unit

mW

C
C

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© 2011 ROHM Co., Ltd. All rights reserved.

1/2

2011.09 - Rev.A

www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.

Data Sheet

DTC043ZM / DTC043ZEB / DTC043ZUB

Electrical characteristics (Ta=25C)

Parameter Min. Typ. Test Conditions

Input voltage

Output voltage - 0.05

Input current - -

Output current - -

DC current gain 80 -

Transition frequency * - 250

Input resistance 3.29 4.7

Resistance ratio 8 10

* Characteristics of built-in transistor

Electrical characteristics curves

Symbol Max. Unit

V

V

V

I

R

I(off)

I(on)

O(on)

I

I

O(off)

G

f

T

R

2/R1

I

1

--

1.1 -

0.5 V

-V

0.15 V

1.8 mA

500 nA

--

- MHz

6.11

k

12 -

VCC=5V / IO=100uA

VO=0.3V / IO=5mA

IO=5mA / II=0.5mA

VI=5V

VCC=50V / VI=0V

V

=10V / IO=5mA

O

VCE=10V /IE=-5mA
f=100MHz

(mA)

O

OUTPUT CURRENT : I

10

1

Ta=125ºC

0.1

0.01

0.001
0 0.5 1 1.5 2 2.5 3

INPUT VOLTAGE : V

Ta=75ºC
Ta=25ºC
Ta=-40ºC

100

(V)

I(on)

10

1

INPUT VOLTAGE : V

0.1

Ta=-40ºC

Ta=25ºC
Ta=75ºC

Ta=125ºC

0.1 1 10 100

OUTPUT CURRENT : I

VO=0.3V

(mA)

O

Fig.1 Input Voltage vs. Output Current Fig.2 Input Voltage vs. Output Current

(ON characteristics) (OFF characteristics)

I

1000

100

Ta=125ºC

Ta=75ºC
Ta=25ºC

Ta=-40ºC

VO=10V

(V)

O(on)

1

0.1

I(off)

VCC=5V

(V)

IO/II=10

10

DC CURRENT GAIN : G

1

0.1 1 10 100

OUTPUT CURRENT : I

Fig.3 DC Current Gain vs. Output Current Fig.4 Output Voltage vs. Output Current

(mA)

O

2/2

0.01

OUTPUT VOLTAGE : V

0.001

0.1 1 10 100

Ta=125ºC

Ta=75ºC
Ta=25ºC

Ta=-40ºC

OUTPUT CURRNET : I

(mA)

O

2011.09 - Rev.A