Data Sheet
100mA/50V Digital transistors(with built-in resistors)
DTC043ZM / DTC043ZEB / DTC043ZUB
Features Dimensions (Unit : mm)
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See Equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
VMT3
Abbreviated symbol : 42
EMT3F
(3)
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Applications
Inverter, Interface, Driver
Packaging specifications and h
Package VMT3 EMT3F
FE
UMT3F
Equivalent circuit
Packaging Type Taping Taping Taping
Type
DTC043ZM
DTC043ZEB
DTC043ZUB - -
Code T2L TL
Basic ordering
unit (pieces)
8000 3000 3000
○
-○
TL
--
-
○
Absolute maximum (Ta=25C)
Parameter Symbol
Supply voltage
Input voltage
Collector current *1
Output current
Power dissipation *2
V
V
I
C(max)
I
P
CC
IN
O
D
Limits(DTC043Z□)
MEB UB
50 V
30 V
-5 V
100 mA
100 mA
150 200
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
(1) (2)
Abbreviated symbol : 42
UMT3F
0.32
0.4250.425
2.1
1.25
Abbreviated symbol : 42
R
IN
IN
=4.7k, R2=47k
R
1
2.0
(3)
(1) (2)
0.65 0.65
1.3
1
R
2
0.9
0.530.53
0.13
OUT
GND
OUT
GND
Unit
mW
C
C
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1/2
2011.09 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
DTC043ZM / DTC043ZEB / DTC043ZUB
Electrical characteristics (Ta=25C)
Parameter Min. Typ. Test Conditions
Input voltage
Output voltage - 0.05
Input current - -
Output current - -
DC current gain 80 -
Transition frequency * - 250
Input resistance 3.29 4.7
Resistance ratio 8 10
* Characteristics of built-in transistor
Electrical characteristics curves
Symbol Max. Unit
V
V
V
I
R
I(off)
I(on)
O(on)
I
I
O(off)
G
f
T
R
2/R1
I
1
--
1.1 -
0.5 V
-V
0.15 V
1.8 mA
500 nA
--
- MHz
6.11
k
12 -
VCC=5V / IO=100uA
VO=0.3V / IO=5mA
IO=5mA / II=0.5mA
VI=5V
VCC=50V / VI=0V
V
=10V / IO=5mA
O
VCE=10V /IE=-5mA
f=100MHz
(mA)
O
OUTPUT CURRENT : I
10
1
Ta=125ºC
0.1
0.01
0.001
0 0.5 1 1.5 2 2.5 3
INPUT VOLTAGE : V
Ta=75ºC
Ta=25ºC
Ta=-40ºC
100
(V)
I(on)
10
1
INPUT VOLTAGE : V
0.1
Ta=-40ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1 1 10 100
OUTPUT CURRENT : I
VO=0.3V
(mA)
O
Fig.1 Input Voltage vs. Output Current Fig.2 Input Voltage vs. Output Current
(ON characteristics) (OFF characteristics)
I
1000
100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
VO=10V
(V)
O(on)
1
0.1
I(off)
VCC=5V
(V)
IO/II=10
10
DC CURRENT GAIN : G
1
0.1 1 10 100
OUTPUT CURRENT : I
Fig.3 DC Current Gain vs. Output Current Fig.4 Output Voltage vs. Output Current
(mA)
O
2/2
0.01
OUTPUT VOLTAGE : V
0.001
0.1 1 10 100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
OUTPUT CURRNET : I
(mA)
O
2011.09 - Rev.A
Notes
Notice
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