ROHM DTC043TM Technical data
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©2011 ROHM Co., Ltd. All rights reserved.
100mA/50V Digital transistors(with built-in resistors)
R
1
C
E
B
B : Bas e
C : Collector
E : Emitter
DTC043TM / DTC043TEB / DTC043TUB
Features Dimensions (Unit : mm)
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
VMT3
Abbreviated symbol : 49
EMT3F
Structure
NPN epitaxial planar silicon transistor
(3)
(1) (2)
(Resistor built-in type)
Abbreviated symbol : 49
Applications
UMT3F
Inverter, Interface, Driver
2.0
0.32
(3)
0.4250.425
2.1
1.25
(1) (2)
0.65 0.65
1.3
Abbreviated symbol : 49
Packaging specifications Equivalent circuit
Package VMT3 EMT3F
UMT3F
Packaging Type Taping Taping Taping
Type
DTC043ＴM
DTC043ＴEB
Code T2L TL
Basic ordering
unit (pieces)
8000 3000 3000
○
-○
DTC043ＴUB - -
--
TL
○
R
=4.7k
1
0.9
0.530.53
0.13
Absolute maximum (Ta=25C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation *
V
CBO
V
CEO
V
EBO
I
C
P
D
Limits(DTC043T□)
MEB UB
50 V
50 V
5V
100 mA
150 200
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150
* Each terminal mounted on a reference land
1/2
Unit
mW
C
C
2011.08 - Rev.A
DTC043TM / DTC043TEB / DTC043TUB
Electrical characteristics (Ta=25C)
Parameter Min. Typ.
Collector-Base breakdown voltage 50 -
Collector-Emitter breakdown voltage 50 -
Emitter-Base breakdown voltage 5 -
Collector cut-off current - -
Emitter cut-off current - -
Collector-Emitter saturation voltage -
DC current gain
Transition frequency * - 250
Input resistance 3.29 4.7
* Characteristics of built-in transistor
Symbol Max. Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
100 -
0.05
Electrical characteristics curves
-V
-V
-V
500 nA
500 nA
0.15 V
600 -
- MHz
6.11
k
Test Conditions
I
=50A
C
I
=1mA
C
IE=50A
VCB=50V
VEB=4V
I
=5mA / IB=0.5mA
C
VCE=10V / IC=5mA
=10V / IE=-5mA
V
CE
f=100MHz
Data Sheet
1000
FE
100
DC CURRENT GAIN : h
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
10
1
0.1 1 10 100
COLLECTOR CURRENT : IC (mA)
VCE=10V
COLLECTOR SATURATION VOLTAGE :
1
Ta=125ºC
Ta=75ºC
0.1
(V)
CE(sat)
V
0.01
0.001
0.1 1 10 100
Ta=25ºC
Ta=-40ºC
COLLECTOR CURRNET : IC (mA)
IC/IB=10
Fig.1 DC Current Gain vs. Collector Current Fig.2 Collector Saturation Voltage vs. Collector Current
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.08 - Rev.A
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